2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
|
Original
|
2SC5065
2SC5085
2SC5090
2SC5095
MT3S06U
MT3S07U
2SC5066
2SC5086
2SC5091
2SC5096
2SK3075 equivalent
10 ghz transistor
2SK3078
MT3S04T
2SC5066
MT6P03AE
MT6P06E
3SK320
24lu1
transistor 2SC5066
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2SC5320
16GHz
|
PDF
|
2SC5320
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain
|
OCR Scan
|
2SC5320
2SC5320
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1-0.5 • • Low Noise Figure :N F=1.4dB (f=2GHz) High Gain : |S2l e|2 = 10dB (f=2GHz)
|
OCR Scan
|
2SC5320
16GHz
SC-59A
|
PDF
|
transistor P3d
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 3 2 Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2SC5320
16GHz
transistor P3d
|
PDF
|
2SC5320
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2SC5320
16GHz
SC-59
2SC5320
|
PDF
|
2SC5320
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain
|
OCR Scan
|
2SC5320
SC-59
2SC5320
|
PDF
|
2SC5320
Abstract: MARKING LODB 2SC532
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz)
|
OCR Scan
|
2SC5320
16GHz
SC-59
2SC5320
MARKING LODB
2SC532
|
PDF
|
2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
|
OCR Scan
|
T258-OMI
FAX06
2SC144
2SD466
2sc5266
|
PDF
|