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    onsemi 2SC5551AE-TD-E

    RF TRANS NPN 30V 3.5GHZ PCP
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    Quest Components 2SC5551AE-TD-E 42
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    onsemi 2SC5551AF-TD-E

    RF TRANS NPN 30V 3.5GHZ PCP
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    2SC5551 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5551 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor High-Frequ Original PDF
    2SC5551 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC5551 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC5551 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SC5551AE-TD-E On Semiconductor 2SC5551A - NPN Bipolar Transistor for High-Frequency Medium-Output Amplifier Applications Original PDF
    2SC5551AF-TD-E On Semiconductor 2SC5551A - NPN Bipolar Transistor for High-Frequency Medium-Output Amplifier Applications Original PDF

    2SC5551 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5551

    Abstract: TA-2665
    Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).


    Original     		PDF ENN6328 2SC5551 300mA) 2SC5551] 25max 2SC5551 TA-2665

    2SC5551

    Abstract: No abstract text available
    Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).


    Original     		PDF 2SC5551A ENA1118 300mA) 250mm20 A1118-4/4 2SC5551

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1118A 2SC5551A 300mA, 300mA) 250mm2 A1118-6/6

    A11182

    Abstract: 2sc5551a A1118-4/4
    Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)


    Original     		PDF ENA1118A 2SC5551A 300mA) 250mm2 A1118-6/6 A11182 2sc5551a A1118-4/4

    Untitled

    Abstract: No abstract text available
    Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).


    Original     		PDF ENA1118 2SC5551A 300mA) 250mm20 A1118-4/4

    2SC5551

    Abstract: 2038
    Text: 注文コード No. N 6 3 2 8 2SC5551 No. N 6 3 2 8 N1299 新 2SC5551 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高周波中出力増幅用 ・高 fT である： fT=3.5GHz typ 。 ・大電流である：(IC=300mA)。 ・コレクタ損失が大きい：(1.3W max)。


    Original     		PDF 2SC5551 N1299 300mA) 250mm2 300mA 2SC5551 2038

    Untitled

    Abstract: No abstract text available
    Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)


    Original     		PDF 2SC5551A ENA1118A 300mA) 250mm2Ã A1118-6/6

    2SC5551

    Abstract: TA-2665 marking eb
    Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).


    Original     		PDF ENN6328 2SC5551 300mA) 2SC5551] 25max 2SC5551 TA-2665 marking eb

    A1118

    Abstract: 7007B-004 2sc5551a 7400A
    Text: 2SC5551A 注文コード No. N A 1 1 1 8 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5551A 高周波中出力増幅用 特長 ・高 fT である： fT=3.5GHz typ 。 ・大電流である： (IC=300mA)。


    Original     		PDF 2SC5551A 300mA) 250mm2 300mA 2SC5551A IT01071 600mA 250mm2 A1118 7007B-004 7400A

    RD1004

    Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
    Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）


    Original     		PDF CDMA2000] 3-7300Fax OVA21 052-453-1331Fax 06-6353-3361Fax 03-5701-1111Fax 078-928-8010Fax 078-331-8400Fax 075-371-4058Fax 052-459-3501Fax RD1004 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    2SC5551

    Abstract: SMA4306 FH102A cph6003 CPH6003A 15GN01CA NFC15-48S05-4 2SC5226 2sc5231 15GN01MA
    Text: Ordering number : E I 0 0 8 2 Announcement Regarding the Discontinuation of High-frequency Transistors and Development of Replacement Products Thank you for using SANYO semiconductor products. Please note, as captioned above, we will be discontinuing the products listed in the table below.


    Original     		PDF 15GN01C 15GN01CA 2SC5537 2SC5537A 15GN01F FH102 FH102A 2SC5490 2SC5490A FH105 2SC5551 SMA4306 FH102A cph6003 CPH6003A 15GN01CA NFC15-48S05-4 2SC5226 2sc5231 15GN01MA

    smd transistor marking 12W

    Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
    Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3


    Original     		PDF MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103

    LA 7687 a

    Abstract: No abstract text available
    Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)


    OCR Scan     		PDF ENN6328 2SC5551 300mA) 2SC5551] LA 7687 a