Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC5553 TRANSISTOR Search Results

    2SC5553 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC5553 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5553

    Abstract: No abstract text available
    Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)


    Original     		PDF 2SC5553 2SC5553

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Rating Collector-emitter voltage E-B short VCES 1 700 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO


    Original     		PDF 2SC5553

    2SC5553

    Abstract: No abstract text available
    Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 30 A Collector current


    Original     		PDF 2SC5553 2SC5553

    2SC5553

    Abstract: C5553
    Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) 5° 5° 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600


    Original     		PDF 2SC5553 2SC5553 C5553

    2SC5553

    Abstract: No abstract text available
    Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.2±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Base current Collector current


    Original     		PDF 2SC5553 SC-94 2SC5553

    2SC5521

    Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
    Text: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced


    Original     		PDF 500V/1600V/1700V/1800V/2000V 2SC5521 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5553 transistor

    Abstract: transistor 3E TO36 2sc5522 M.P Diode
    Text: Horizontal Deflection Transistor Series for TV • Overview B ased on accum ulated m anufacturing technology, these horizontal deflection transistors for TVs offer high perform ance and com pact design. T hey can also w ithstand high voltage and m aintain low loss. T hey also have a broad area o f safeoperation, despite an absolutely m inim al chip area which allow s very com pact package configuration. These advanced


    OCR Scan     		PDF 500V/1600V/1700V/1800V 2SC5572 2SC5518/2SC5523 5517/2SC5522 2SC5519/2SC5524 2SC5516/2SC 2SC5553 transistor transistor 3E TO36 2sc5522 M.P Diode

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266