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California Eastern Laboratories (CEL) 2SC5754-A RF TRANS NPN 5V 20GHZ SOT343F
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DigiKey	2SC5754-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC5754-T2-A RF TRANS NPN 5V 20GHZ SOT343F
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DigiKey	2SC5754-T2-A	Digi-Reel			1	1 $2.18 10 $2.18 100 $2.18 1000 $2.18 10000 $2.18	Buy Now
	2SC5754-T2-A	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2SC5754-T2-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SC5754-T2-A 2SC5754 - RF Small Signal Bipolar Transistor, 0.5A, NPN '
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Rochester Electronics	2SC5754-T2-A		10		1	1 $0.4622 10 $0.4622 100 $0.4345 1000 $0.3929 10000 $0.3929	Buy Now

2SC5754 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC5754	NEC	Silicon Transistor	Original	PDF
2SC5754	NEC	NPN SILICON RF TRANSISTOR	Original	PDF
2SC5754-A	CEL	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-343F	Original	PDF
2SC5754FB	NEC	NPN Silicon RF Transistor for Medium Output Power Amplification (0.4 W) Flat-Lead 4-Pin Thin-Type Super Minimold (M04)	Original	PDF
2SC5754FB-T2	NEC	NPN Silicon RF Transistor for Medium Output Power Amplification (0.4 W) Flat-Lead 4-Pin Thin-Type Super Minimold (M04)	Original	PDF
2SC5754-T2	NEC	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)	Original	PDF
2SC5754-T2	NEC	NPN SILICON RF TRANSISTOR	Original	PDF
2SC5754-T2-A	CEL	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-343F	Original	PDF

2SC5754 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor marking R57 ghz Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	PDF	2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
j 6815 transistor Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	PDF	2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
TRANSISTOR J 6815 EQUIVALENT Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	PDF	2SC5754 2SC5754-T2 TRANSISTOR J 6815 EQUIVALENT 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
transistor marking R57 ghz Abstract: No abstract text available Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	PDF	NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
TRANSISTOR R57 Abstract: 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 20 GHz ICBO PARAMETERS AND CONDITIONS TYP MAX 1000 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000 hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA	Original	PDF	NE664M04 2SC5754 TRANSISTOR R57 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A
2SC5754 Abstract: DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A NE678M04 NE68019 S21E Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 NEC's NE664M04 is fabricated using NEC's state-of-the-art	Original	PDF	NE664M04 OT-343 NE664M04 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04-T2-A NE678M04 NE68019 S21E
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	PDF	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PDF	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
TRANSISTOR R57 Abstract: 2SC5754-T2 transistor marking R57 ghz 2SC5434 2SC5509 2SC5753 2SC5754 DCS1800 GSM1800 NE5520379A Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	PU10008EJ02V0DS 2SC5754 TRANSISTOR R57 2SC5754-T2 transistor marking R57 ghz 2SC5434 2SC5509 2SC5753 2SC5754 DCS1800 GSM1800 NE5520379A
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	PDF	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

ic isl 887 Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 Text: RF & マイクロ波デバイスシステムブロック www.renesas.com 2010.04 目次 1. はじめに •··········································································································································· 3	Original	PDF	PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
mc10087f1 Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.	Original	PDF	IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF
TRANSISTOR R57 Abstract: MA3005 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	2SC5754 2SC5754-T2 PU10008JJ02V0DS PU10008JJ02V0DS M04mm L044-435-1588 TRANSISTOR R57 MA3005 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A
1658 NEC Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
UPC8236 Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
TRANSISTOR R57 Abstract: free ic 339 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2 NE678M04 Text: MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR NE664M04 FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 The NE664M04 is fabricated using NEC's state-of-the-art	Original	PDF	NE664M04 OT-343 NE664M04 TRANSISTOR R57 free ic 339 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04-T2 NE678M04
UPC8236 Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02 Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4	Original	PDF	R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	PDF	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

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2SC5754 Search Results

2SC5754 Price and Stock

California Eastern Laboratories (CEL) 2SC5754-A

California Eastern Laboratories (CEL) 2SC5754-T2-A

Renesas Electronics Corporation 2SC5754-T2-A

2SC5754 Datasheets (8)

2SC5754 Datasheets Context Search

transistor marking R57 ghz

j 6815 transistor

TRANSISTOR J 6815 EQUIVALENT

transistor marking R57 ghz

mobile phone basic block diagram

FET marking code g5d

nec mosfet marked v75

2SK2500

TRANSISTOR R57

2SC5754

SMD M05 sot23

transistor marking T79 ghz

TRANSISTOR R57

marking code C1E SMD Transistor

ic isl 887

BB 509 varicap diode

mc10087f1

BGU7073

TRANSISTOR R57

1658 NEC

UPC8236

TRANSISTOR R57

UPC8236

MRF947T1 equivalent