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    2SD1262A Search Results

    2SD1262A Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1262A Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1262A Panasonic NPN Transistor Darlington Original PDF
    2SD1262A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1262A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1262A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1262A Unknown Cross Reference Datasheet Scan PDF
    2SD1262AQ Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1262AR Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD1262A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB0939

    Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
    Text: Power Transistors 2SB0939, 2SB0939A 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation


    Original     		2SB0939, 2SB0939A 2SB939, 2SB939A) 2SD1262 2SD1262A 2SB0939 2SB0939 2SB0939A 2SB939 2SB939A 2SD1262A PDF

    Pc6-080

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type darlington Unit: mm Collector-base voltage (Emitter open) 2SD1262 VCBO 2SD1262A Unit 60 V 2 80 Collector-emitter voltage 2SD1262


    Original     		2002/95/EC) 2SD1262, 2SD1262A 2SB0939, 2SB0939A 2SD1262 2SD1262 2SD1262A Pc6-080 PDF

    2SB0939

    Abstract: 2SB0939A 2SD1262 2SD1262A IB40
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type darlington Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 2SD1262 Collector-base voltage (Emitter open) 1 Rating Unit 60 V VCBO


    Original     		2002/95/EC) 2SD1262, 2SD1262A 2SB0939, 2SB0939A 2SD1262 2SB0939 2SB0939A 2SD1262 2SD1262A IB40 PDF

    2SB0939

    Abstract: 2SB0939A 2SD1262 2SD1262A
    Text: Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type darlington Unit: mm Collector-base voltage Emitter open 2SD1262 VCBO 2SD1262A Unit 60 V 2 80 Collector-emitter voltage 2SD1262 (Base open) 2SD1262A VCEO Emitter-base voltage (Collector open)


    Original     		2SD1262, 2SD1262A 2SD1262 2SB0939 2SB0939A 2SD1262 2SD1262A PDF

    2SB939

    Abstract: 2SB939A 2SD1262 2SD1262A
    Text: Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB939 and 2SB939A 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage


    Original     		2SD1262, 2SD1262A 2SB939 2SB939A 2SD1262 2SB939A 2SD1262 2SD1262A PDF

    2SB939

    Abstract: 2SB939A 2SD1262 2SD1262A DSA003711
    Text: Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation Ta=25°C 45 PC


    Original     		2SB939, 2SB939A 2SD1262 2SD1262A 2SB939 2SB939 2SB939A 2SD1262A DSA003711 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type darlington Unit: mm Collector-base voltage (Emitter open) 2SD1262 VCBO 2SD1262A Unit 60 V 2 80 Collector-emitter voltage 2SD1262


    Original     		2002/95/EC) 2SD1262, 2SD1262A 2SB0939, 2SB0939A 2SD1262 2SD1262 2SD1262A PDF

    IB500

    Abstract: 2SB0939 2SB939 2SB939A 2SD1262 2SD1262A
    Text: Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB0939 2SB939 and 2SB939A (2SB939A) 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80


    Original     		2SD1262, 2SD1262A 2SB0939 2SB939) 2SB939A 2SB939A) 2SD1262 IB500 2SB0939 2SB939 2SB939A 2SD1262 2SD1262A PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SB0939

    Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
    Text: Power Transistors 2SB0939 2SB939 , 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939 (Base open) 2SB0939A VCEO Emitter-base voltage (Collector open)


    Original     		2SB0939 2SB939) 2SB0939A 2SB939A) 2SB0939 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939


    Original     		2002/95/EC) 2SB0939 2SB939) 2SB0939A 2SB939A) 2SD1262, 2SD1262A 2SB0939 PDF

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902 PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


    Original     		2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939


    Original     		2002/95/EC) 2SB0939 2SB939) 2SB0939A 2SB939A) 2SD1262, 2SD1262A 2SB0939 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 VCBO −60 V 2 −80 Collector-emitter voltage 2SB0939 (Base open) 2SB0939A


    Original     		2002/95/EC) 2SB0939 2SB939) 2SB0939A 2SB939A) 2SD1262, 2SD1262A PDF

    2SB939

    Abstract: 2SB939A 2SD1262 2SD1262A
    Text: 2SD1262, 2SD1262A Power Transistors 2SD1262, 2SD1262A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SB939, 2SB939A. • Features . • High DC c u rre n t gain Iifê • High speed switching '


    OCR Scan     		2SD1262, 2SD1262A 2SB939, 2SB939A. 2SD1262 2SB939 2SB939A 2SD1262A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1262, 2SD1262A 2SD1262, 2SD1262A Package Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max. 8.7max. t"—* l.l.max. 6.5 max. Medium Speed Pow er Switching Com plem entary Pair with 2SB939, 2SB939A. r— i


    OCR Scan     		2SD1262, 2SD1262A 2SB939, 2SB939A. 2SD1262 PDF

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251 PDF

    2SB962

    Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
    Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»


    OCR Scan     		2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB947A 2SB951A 2SB952 2SB952A 2SB962 2SD1288 2SB941A 2SB942 PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398 PDF