2SD128 Search Results

2SD128 Result Highlights (3)

Part	Manufacturer	Description
2SD1286-Z-E1-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, , /
2SD1286-Z-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, , /
2SD1286-AZ	Renesas Electronics Corporation	Bipolar Power Transistors

2SD128 Price and Stock

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Panasonic Electronic Components 2SD12800RL TRANS NPN 20V 1A MINIP3-F1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD12800RL	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2SD1286-Z-E1-AZ SMALL SIGNAL BIPOLAR TRANSTR NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1286-Z-E1-AZ	Bulk			451	1 - 10 - 100 - 1000 $0.67 10000 $0.67	Buy Now
Samtec Inc MTMM-150-02-S-D-128 Conn Unshrouded HDR 100 POS 2mm Solder ST Through Hole - Bulk (Alt: MTMM-150-02-S-D-12) Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MTMM-150-02-S-D-128	Bulk			1	1 $18.57 10 $17.58 100 $12.18 1000 $12.18 10000 $12.18	Buy Now
Mouser Electronics	MTMM-150-02-S-D-128					1 $18.57 10 $17.58 100 $12.18 1000 $10.74 10000 $10.74	Get Quote
Master Electronics	MTMM-150-02-S-D-128					1 $21.22 10 $18.94 100 $13.04 1000 $8.27 10000 $8.27	Buy Now
Sager	MTMM-150-02-S-D-128		127		1	1 $18.57 10 $17.58 100 $12.18 1000 $10.74 10000 $10.74	Buy Now
Samtec Inc S2SD-10-28-L-03.85-DR-NDX Rectangular Cable Assemblies 2.00 mm Tiger Eye Double Row Discrete Wire Cable Assembly, Socket Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	S2SD-10-28-L-03.85-DR-NDX					1 $15.05 10 $14.25 100 $11.69 1000 $10.01 10000 $10.01	Get Quote
Samtec Inc S2SD-10-28-L-08.75-DR-NDX Rectangular Cable Assemblies 2.00 mm Tiger Eye Double Row Discrete Wire Cable Assembly, Socket Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	S2SD-10-28-L-08.75-DR-NDX					1 $16.6 10 $15.72 100 $12.89 1000 $11.01 10000 $11.01	Get Quote

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2SD128 Datasheets (94)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD128	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD128	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD128	Unknown	Cross Reference Datasheet	Scan	PDF
2SD128	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD128	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD128	Unknown	Vintage Transistor Datasheets	Scan	PDF
2SD128	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2SD128	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD1280	Kexin	Silicon NPN Epitaxial Planar Type	Original	PDF
2SD1280	Panasonic	NPN Transistor	Original	PDF
2SD1280	Panasonic	Silicon NPN epitaxial planer type	Original	PDF
2SD1280	TY Semiconductor	Silicon NPN Epitaxial Planar Type - SOT-89	Original	PDF
2SD1280	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1280	Unknown	Transistor Substitution Data Book 1993	Scan	PDF

2SD1280	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1280	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD12800RL	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 20VCEO 1A MINI PWR	Original	PDF
2SD12800SL	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 20VCEO 1A MINI PWR	Original	PDF
2SD1280RR	Panasonic	Silicon NPN Epitaxial Planar Type Transistor	Original	PDF
2SD1280RS	Panasonic	Silicon NPN Epitaxial Planar Type Transistor	Original	PDF

2SD128 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SMD Type Product specification 2SD1280 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage	Original	PDF	2SD1280
2SB965 Abstract: 2SD1288 Text: SavantIC Semiconductor Product Specification 2SB965 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector	Original	PDF	2SB965 2SD1288 -120V; 2SB965 2SD1288
2SB966 Abstract: 2SD1289 Text: SavantIC Semiconductor Product Specification 2SB966 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1289 · APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector	Original	PDF	2SB966 2SD1289 -120V; 2SB966 2SD1289
2SD1280 Abstract: No abstract text available Text: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the	Original	PDF	2SD1280 2SD1280
2SB0956 Abstract: 2SD1280 Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Rating Unit VCBO −20 V Collector-emitter voltage (Base open)	Original	PDF	2002/95/EC) 2SB0956 2SD1280 2SB0956 2SD1280
2SB0956 Abstract: 2SB956 2SD1280 Text: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm 4.5±0.1 1.6±0.2 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO	Original	PDF	2SB0956 2SB956) 2SD1280 2SB0956 2SB956 2SD1280
TC1627 Abstract: 1627A 2SB963-Z 2SD1286-Z Text: DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION PACKAGE DRAWING (Unit: mm) The 2SB963-Z is designed for switching, especially in Hybrid 5.5 ±0.2 • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z	Original	PDF	2SB963-Z 2SB963-Z 2SD1286-Z TC1627 1627A 2SD1286-Z
2SD1280 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain	Original	PDF	2002/95/EC) 2SD1280 2SD1280
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25	Original	PDF	2002/95/EC) 2SD1280
2SB0956 Abstract: 2SD1280 Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Unit −20 V Collector-emitter voltage (Base open)	Original	PDF	2002/95/EC) 2SB0956 2SD1280 2SB0956 2SD1280
2SD1280G Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat)	Original	PDF	2002/95/EC) 2SD1280G 2SD1280G
Untitled Abstract: No abstract text available Text: 2SD1286 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.30k	Original	PDF	2SD1286
2SB0956G Abstract: 2SD1280G Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G ue pl d in an c se ed lud pl vi an m m es	Original	PDF	2002/95/EC) 2SB0956G 2SD1280G 2SB0956G 2SD1280G
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C	Original	PDF	2002/95/EC) 2SB0956G 2SD1280G

Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.	Original	PDF	2002/95/EC) 2SD1280G
Untitled Abstract: No abstract text available Text: Transistor 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the	Original	PDF	2SD1280
Untitled Abstract: No abstract text available Text: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1280 Unit: mm 4.5±0.1 1.6±0.2 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO	Original	PDF	2SB0956 2SB956) 2SD1280
2SD1280 Abstract: No abstract text available Text: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the	Original	PDF	2SD1280 2SD1280
2SD1280G Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.	Original	PDF	2002/95/EC) 2SD1280G 2SD1280G
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des	Original	PDF	2002/95/EC) 2SD1280
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 1.5±0.1 Parameter Symbol Rating Unit VCBO −20	Original	PDF	2002/95/EC) 2SB0956 2SD1280
2SD1280 Abstract: No abstract text available Text: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the	Original	PDF	2SD1280 2SD1280
2SD1267 Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290	OCR Scan	PDF	2SD1267 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1279 SC-62 2SD1280 2SD1267 2SD1267A 2SD1271 2SD1273 2SD1273A 2SD1274
MEL12 Abstract: tc1669 MM 1669A 2sd1286 2SB963-Z 2SD1286-Z TC-1669A Text: DATA SHEET ,r NEC SILICON TRANSISTOR 2SD1286-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2 S D 1 2 8 6 -Z is d esig n e d fo r S w itc h in g , es p e cially in H ybrid in m illim eters In te g ra te C ircuits. 6.5±0.2 ^ FEATURES	OCR Scan	PDF	2SD1286-Z 2SD1286-Z 2SB963-Z IEI-1209) MEL12 tc1669 MM 1669A 2sd1286 2SB963-Z TC-1669A

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2SD128 Search Results

2SD128 Result Highlights (3)

2SD128 Price and Stock

Panasonic Electronic Components 2SD12800RL

Rochester Electronics LLC 2SD1286-Z-E1-AZ

Samtec Inc MTMM-150-02-S-D-128

Samtec Inc S2SD-10-28-L-03.85-DR-NDX

Samtec Inc S2SD-10-28-L-08.75-DR-NDX

2SD128 Datasheets (94)

2SD128 Datasheets Context Search

Untitled

2SB965

2SB966

2SD1280

2SB0956

2SB0956

TC1627

2SD1280

Untitled

2SB0956

2SD1280G

Untitled

2SB0956G

Untitled

Untitled

Untitled

Untitled

2SD1280

2SD1280G

Untitled

Untitled

2SD1280

2SD1267

MEL12