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    2SD1781 Price and Stock

    PanJit Group 2SD1781A_R1_00001

    SOT-23, TRANSISTOR
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    ROHM Semiconductor 2SD1781KT146R

    TRANS NPN 32V 0.8A SMT3
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    ROHM Semiconductor 2SD1781KT146Q

    TRANS NPN 32V 0.8A SMT3
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    ROHM Semiconductor 2SD1781KFRAT146R

    TRANS NPN 32V 0.8A SMT3
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    PanJit Semiconductor 2SD1781A_R1_00001

    Bipolar Transistors - BJT NPN Low Vce(sat) Transistor
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    Mouser Electronics 2SD1781A_R1_00001 11,707
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    2SD1781 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1781 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1781 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1781A_R1_00001 PanJit Group SOT-23, TRANSISTOR Original PDF
    2SD1781K Kexin Medium Power Transistor Original PDF
    2SD1781K ROHM Medium Power Transistor (32V, 0.8A) Original PDF
    2SD1781K TY Semiconductor Medium Power Transistor - SOT-23 Original PDF
    2SD1781K Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1781K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1781K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SD1781K ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SD1781KR ROHM Medium Power Transistor (32V, 0.8A) Original PDF
    2SD1781KT146Q ROHM TRANS NPN 32V 0.8A SOT-346 Original PDF
    2SD1781KT146Q ROHM Medium Power Transistor (32 V, 0.8 A) Original PDF
    2SD1781KT146R ROHM TRANS NPN 32V 0.8A SOT-346 Original PDF
    2SD1781KT146R ROHM Medium Power Transistor (32 V, 0.8 A) Original PDF

    2SD1781 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd transistor marking af

    Abstract: 2SD1781K
    Text: Transistors IC SMD Type Medium Power Transistor 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1


    Original     		2SD1781K OT-23 500mA 500mA/50mA 100mA -50mA, 100MHz smd transistor marking af 2SD1781K PDF

    2SD1781

    Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
    Text: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197


    Original     		2SD1781 OT-23 500mA 2SB1197 2SD1781-Q 2SD1781-R 100mA, 500mA, 100MHz 2SD1781 2sd1781r transistor afr 2SB1197 2SD1781-Q PDF

    2SB1197

    Abstract: 2SD1781 ahr sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR


    Original     		OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz 2SB1197 2SD1781 ahr sot23 PDF

    ahr TRANSISTOR

    Abstract: ahr sot23
    Text: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K


    Original     		2SB1197K OT-23 A/-50mA) 2SD1781K -100mA -500mA -50mA 100MHZ 062in 300uS ahr TRANSISTOR ahr sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1781 SOT-23 TRANSISTOR NPN FEATURES Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA) z Complements to 2SB1197. z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-23 2SD1781 OT-23 500mA 2SB1197. 100mA 100MHz PDF

    100MHZ

    Abstract: 2SB1197K 2SD1781K VCBO-40V
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


    Original     		2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 2SD1781K= 300uS 100MHZ 2SB1197K 2SD1781K VCBO-40V PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor


    Original     		2SB1197K 2SD1781K. 96-134-B92) PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


    Original     		2SD1781K 500mA 2SB1197K. 96-220-D92) PDF

    sot23 ahq

    Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
    Text: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz sot23 ahq sot23 ahr AHp sot23 ahr transistor ahr sot23 PDF

    marking AFR

    Abstract: No abstract text available
    Text: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — — 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		2SD1781K OT-23-3L OT-23-3L 100mA 500mA 100MHz marking AFR PDF

    2SD1781KGP

    Abstract: transistor D9C
    Text: CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)


    Original     		2SD1781KGP OT-23 -55OC 2SD1781KGP transistor D9C PDF

    100MHZ

    Abstract: 2SB1197K 2SD1781K
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


    Original     		2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K= 100MHZ 2SB1197K 2SD1781K PDF

    2SD1781K

    Abstract: afr 05 transistor afr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD1781K SOT-23-3L TRANSISTOR NPN FEATURES z Low voltage z High saturation current capability 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23-3L 2SD1781K OT-23-3L 100mA 500mA 100MHz 2SD1781K afr 05 transistor afr PDF

    2SB1197

    Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180
    Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781


    Original     		2SB1197 OT-23 /-50mA) 2SD1781 2SB1197-P 2SB1197-Q 2SB1197-R -500mA, -50mA 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180 PDF

    2SB1197K

    Abstract: 2SD1781K T146
    Text: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2


    Original     		2SD1781K 2SB1197K. SC-59 2SB1197K 2SD1781K T146 PDF

    NPN Transistor 8A

    Abstract: Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


    Original     		2SD1781K 500mA 2SB1197K. 96-220-D92) NPN Transistor 8A Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor PDF

    transistor afr

    Abstract: AFR marking 2SD1781K afr 05 transistor afr 60
    Text: 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05 1. 9 ICM℃ 2. 80¡ À0. 05 2. 92¡ À0. 05 200 0. 95¡ À0. 025 PCM: Collector-base voltage


    Original     		2SD1781K OT-23-3L 100mA 500mA, 100MHz transistor afr AFR marking 2SD1781K afr 05 transistor afr 60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1781KFRA 2SD1781K Transistors Medium Power Transistor 32V, 0.8A AEC-Q101 Qualified 2SD1781K 2SD1781KFRA zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package.


    Original     		2SD1781KFRA 2SD1781K AEC-Q101 2SB1197K. 2SB1197K SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2


    Original     		2SD1781K 2SB1197K. SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1


    Original     		2SD1781K OT-23 500mA 500mA/50mA 100mA -50mA, 100MHz PDF

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K •Features ^External dim ensions (Units: mm) 1) Very low VcE(sai). 2 .9 ± 0 .2 VcE(sat) = — 0.13V (Typ.) ( Ic / I b 1 1+02 — 0.1 1.9±0.2 = 500m A/50m A) n 0,8±0.1 0.950.95 2) H igh cu rre n t c a p a c ity in co m p a c t


    OCR Scan     		2SD1781K 2SB1147K. SC-59 2sb1147 PDF

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K # Features •E x te rn a l dim ensions (Units: mm) 1) Very low VcE(sat). VcE(sat) = —0.13V (Typ.) 2.9±0.2 = 500m A/50m A) 1 9 ± 0.2 (Ic / I b 2) < <+0.2 1 1- 0 1 0.8 + 0.1 High cu rre n t ca p a city in co m p a ct


    OCR Scan     		2SD1781K 2SB1147K. SC-59 2sb1147 PDF

    2SB1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib 1 1+0-2 1;1— 0.1 = 500m A /50m A ) . ± 0.1 08 J3 2) H igh cu rre n t c a p a c ity in co m p a ct


    OCR Scan     		2SD1781K 2SB1147K. SC-59 2SB1147 PDF

    2SD1796

    Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
    Text: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800


    OCR Scan     		2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1796 SC-67 2SD1797 2SD1796 SC64 2SB1204 2SD1802 2SD1808A PDF