2SB1198K
Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1
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2SD1782K
2SB1198K.
SC-59
2SB1198K
2SD1782K
T146
2SD1782K ROHM
low capacitance NPN transistor
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Untitled
Abstract: No abstract text available
Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1
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2SD1782K
2SB1198K.
SC-59
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Untitled
Abstract: No abstract text available
Text: 2SD1782KFRA 2SD1782K Transistors AEC-Q101 Qualified Power Transistor 80V, 0.5A 2SD1782K 2SD1782KFRA zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0~0.1 2.8±0.2 (1) 1.6+0.2 −0.1 zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.)
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2SD1782KFRA
2SD1782K
AEC-Q101
2SB1198KFRA
2SB1198K.
SC-59
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2SD1782K ROHM
Abstract: No abstract text available
Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor
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2SD1782K
2SB1198K.
96-222-D93)
2SD1782K ROHM
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2SB1198K
Abstract: 2SD1782K 2SD1782K ROHM
Text: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type
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2SB1198K
2SD1782K.
96-136-B93)
2SB1198K
2SD1782K
2SD1782K ROHM
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Untitled
Abstract: No abstract text available
Text: Transistors AEC-Q101 Qualified Low-frequency Transistor *80V, *0.5A 2SB1198KFRA 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm)
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AEC-Q101
2SB1198KFRA
2SB1198K
2SD1782KFRA
2SD1782K.
96-136-B93)
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20594
Abstract: transistor bf 198 2SD1782K ROHM BY 198 DATASHEET transistor equivalent book 2SD1782K 2SD1782K TR1082
Text: SPICE PARAMETER 2SD1782K by ROHM TR Div. * Q2SD1782K NPN BJT model * Date: 2006/12/15 .MODEL Q2SD1782K NPN + IS=250.00E-15 + BF=260.39 + VAF=100 + IKF=2 + ISE=250.00E-15 + NE=1.4602 + BR=34.771 + VAR=100 + IKR=1.9204 + ISC=32.139E-12 + NC=1.4582 + NK=.95449
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2SD1782K
Q2SD1782K
00E-15
139E-12
16E-12
788E-12
07E-12
22E-9
20594
transistor bf 198
2SD1782K ROHM
BY 198 DATASHEET
transistor equivalent book 2SD1782K
2SD1782K
TR1082
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sp8m3
Abstract: RSQ035P03 10W zener diode zener diode 20w SP8J1 automotive ecu ROHM PTZ Series rss065n06 2k 9e dual 2sc2412k
Text: Products for Automotive Electronic Equipment RECOMMENDED DEVICES For Power supply / DC/DC converter / Various types of motors For Relay / Motor drive Transistors for solenoid motor drive Ultra-low ohmic chip resistors for current detection DTDG14GP , DTDG23YP , 2SD2143 , QSH29
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DTDG14GP
DTDG23YP
2SD2143
QSH29
DTDG23YP
DTDG14GP
2SD2143
QSH29
2SB1260
sp8m3
RSQ035P03
10W zener diode
zener diode 20w
SP8J1
automotive ecu
ROHM PTZ Series
rss065n06
2k 9e
dual 2sc2412k
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rds035
Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW
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RHU002N06
2SD2167
56to270
2SB1132
2SD1664
82to390
2SB1188
2SD1766
2SB1182
2SD1758
rds035
rds035l03
MMST8598
fet MK10
SM6K2
2SK3065
RHU002N06
RK7002 equivalent
bc847bc
2sd198
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113 marking code transistor ROHM
Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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pioneer mosfet audio amp ic
Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great
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2008-Feb.
SC-75A
OT-416
50P5876E
pioneer mosfet audio amp ic
12V ENERGY LIGHT CIRCUIT DIAGRAM
vmn3 package
DTC143T datasheet
TRANSISTOR SMD catalog
Equivalent transistors for UMD2N
smd ya transistor
2SD2211
2SA1576UB
2SC6114
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2SA1576UB
Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.
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R0039A
51P6029E
2SA1576UB
2SC1740s equivalent
transistor digital 47k 22k PNP NPN
2sd198
2SC6114
2sc401
2SB1240
2SB1694
2SC5865
2sD2703
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2SD1782KI
Abstract: No abstract text available
Text: h7 > y 2SD1782K $ /Transistors i ti £ * y U -+ M NPN y y n > h 7 > v * 2 Epitaxial Planar NPN Silicon Transistor fêJS JgÆ :fri|liffl/L o w Freq. Power Amp. 2SD1782K 1i^-Jîi^jâO/Dimensions Unit : mm) Vce (sat)=0.2V (Typ.) 1. 9 ± 0 . 2 (lc /lB = 0 .5 A /5 0 m A )
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2SD1782K
2SD1782K
2SB1198K
SC-59
Ta-25
2SD1782KI
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Untitled
Abstract: No abstract text available
Text: Transistors Power Transistor 80V, 0.5A 2SD1782K •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.2V (Typ.) (I / I = 0.5A/50mA) 2) High breakdown voltage, c 2 .9 ± 0.2 1 1+0.2 1;1—0.1 1.9 ± 0.2 b 0.8 ± 0 1 (DP B V ceo = 8 0 V
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2SD1782K
A/50mA)
2SB1198K.
SC-59
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Untitled
Abstract: No abstract text available
Text: Transistors Power Transistor 80V, 0.5A 2SD1782K •F e a tu re s 1) External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.2V (Typ.) ( I c / I b = 0.5A/50mA) 2) High breakdown voltage. 2.9±0.2 1 1 + 0 -2 y -0.1 o.0 ±o.1 1.9±0.2 B V ceo = 8 0 V N ’»—
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2SD1782K
A/50mA)
2SB1198K.
SC-59
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2sc2238
Abstract: 2SD759 2sc1741 2SD401A 2SC1628 2SC1959 2SC2021 2SC1627 2SD1562B 2sc2275
Text: m Si € Type No. tt « = Manuf. * m NEC B i HITACHI ¡S ± ài FUJITSU ta t MATSUSHITA m h MITSUBISHI □ — A ROHM B ÌL 2SC2911 2SC1628 2SD1609 2SD 758 - l=F TOSHIBA CD SANYO 2SD 757 ^ 2SC2912 2SC1628 2SD1610 2SD 7 5 9 - B Si 2SC2344 2SC2238 2SD4Q1A 2SC1683
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2SD757
2SD758
2SD759
2SD760
2SC2911
2SC2912
2SC2344
2SD1459
2SC1628
2sc2238
2sc1741
2SD401A
2SC1959
2SC2021
2SC1627
2SD1562B
2sc2275
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2SD636
Abstract: 2SD636 Matsushita RT1N241C DTC124EK 2SC3281 upa74ha 3394 2SC3372 NEC 3377 RT1N441C
Text: - sa « Type No. tt 2SC 3365 ^'' 2SC 3366 2SC 3367 ISO 3368 2SC 3369 2SC 3370 2S0 337 3375 3376 3377 3378 3379 2SC 2SC 2SC 2SC 3380 338] 3382 3383 m h SANYO S ÎL 2SC3277 B S ÎL 2SD1236 2SD1236 ÍL fâ T T ta 2SC3257 2SC3137 B ÎL 3K S X «£ □— A
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2SC3277
2SC3306
2SC2740
2SC4654
2SD1236
2SC3257
2SC2516
2SD1274
2SD1896
2SD636
2SD636 Matsushita
RT1N241C
DTC124EK
2SC3281
upa74ha
3394
2SC3372
NEC 3377
RT1N441C
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RK7002
Abstract: 2sd2142
Text: v:- •.-^jS£*WPÌi!P Transistors Characteristics _ MOS FET 1. Can be used with automatic placement machine. Full line of field-proven packages that are optimized for automatic chip placement. 2. MOS FETs operating from 4 volts
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2SK2503
RK7002
2SB1590K
2SD2444K
2SA1036K
2SC2411K
2SB1197K
2SD1781K
2SD1484K
2SB1198K
2sd2142
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Untitled
Abstract: No abstract text available
Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dim ensions (Unit:s mm) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) (I c / I b = 2) 2.9±0.2 1 1 + 0 -2 11- 0 1 1.0±O.2_ - 0 .5 A /- 5 0 m A ) . ± 0.1 08 0.950.95
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2SB1198K
2SD1782K.
SC-59
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KY 719
Abstract: 122JK TB163TK TB143TK
Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
2SA1036K
2SA1037AK
2SA1037AKLN
2SA1455K
RU101
KY 719
122JK
TB163TK
TB143TK
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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OT-23,
OT-89
OT-143
BZV49
OT-23
2SC2059K
sot-23 MARKING CODE ZA
b0808
BCB47B
BCB17-16
marking za sot89
2SB0151K
marking k5 sot89
SOT 86 MARKING E4
n33 SOT-23
10Y sot-23
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Untitled
Abstract: No abstract text available
Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dimensions (Unit:s mm) LOW VcE(sat). 2.9+0.2 VcE(sat) = —0.2V (Typ.) (Ic / I b +0-2 L—i 1 11 1.9+0.2 = - 0 .5 A /-5 0 m A ) 0 .8 ± 0.1 □ 2) High breakdown voltage.
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2SB1198K
2SD1782K.
SC-59
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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2SC4649 N,P
Abstract: 2SC40B UMX13 MDC02 DTA214YU 2S81260 DTA115UK 2sc5073 2sb1107 dta123y
Text: The Class and Basic Ordering Units for Standard and Semi-standard Products types : 1 standard, (2) semi-standard, and (3) custom. (1) Standard products An inventory of these products is maintained so we can responed to customer orders quickly. (2) Semi-standard products
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1k--200k
TA6270F
MDC01
MDC02
MDC03
MDC04
MDC06
MDE01
MDE02
MDG01
2SC4649 N,P
2SC40B
UMX13
DTA214YU
2S81260
DTA115UK
2sc5073
2sb1107
dta123y
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
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