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    2SD195 Search Results

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    2SD1950-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD1950-T2-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD1950(0)-T1-AY Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SD1950(0)-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD1950-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
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    Samtec Inc TW-03-02-S-D-195-SM

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    Samtec Inc MTMM-104-02-S-D-195

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    JRH Electronics MTMM-104-02-S-D-195

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    2SD195 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD195 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD195 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD195 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD195 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD195 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD195 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD195 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD195 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD195 Unknown Cross Reference Datasheet Scan PDF
    2SD195 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD1950 Kexin NPN Silicon Epitaxia Original PDF
    2SD1950 NEC Semiconductor Selection Guide Original PDF
    2SD1950 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1950 TY Semiconductor NPN Silicon Epitaxia - SOT-89 Original PDF
    2SD1950 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1950 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1950 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1950 NEC Silicon Transistor - Power Mini Mold Scan PDF
    2SD1950 NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Scan PDF
    2SD1950 NEC Silicon Transistor Scan PDF

    2SD195 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD1953

    Abstract: EN2507 25073
    Text: Ordering number:EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers. unit:mm 2009A Features [2SD1953] 8.0 · Darlington connection. · High DC current gain.


    Original
    EN2507 2SD1953 20V/1 2SD1953] O-126 2SD1953 EN2507 25073 PDF

    k1986

    Abstract: TC-6129A 6129A 2SD1950
    Text: データ・シート シリコン・トランジスタ Silicon Transistor 2SD1950 NPN エピタキシアル形シリコン・トランジスタ 低周波電力増幅用 本資料の内容は,予告なく変更することがありますので,最新のものであることをご確認の上ご使用ください。


    Original
    2SD1950 D17976JJ3V0DS00 TC-6129A D17976JJ3V0DS M8E02 k1986 TC-6129A 6129A 2SD1950 PDF

    2SD1950

    Abstract: C1987 NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SD1950 D17976EJ3V0DS00 TC-1894A) D17976EJ3V0DS 2SD1950 C1987 NEC Systems PDF

    ie-500

    Abstract: smd marking vl 2SD1950 marking VM
    Text: Transistors SMD Type NPN Silicon Epitaxia 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage


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    2SD1950 ie-500 smd marking vl 2SD1950 marking VM PDF

    nec 2sd381

    Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A


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    2SC522 2N1482 BDC01D 2SD381 2SD382 2SB1086 nec 2sd381 TIP65 MJ4361 2SD608A 2SD1459R SD1478 idc2073 PDF

    2SD1958

    Abstract: 4227t
    Text: Ordering number:EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions • Excellent tf permitting efficient drive with less internal dissipation. unit:mm


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    EN2549A 2SD1958 2SD1958] O-220ML 2SD1958 4227t PDF

    2SD1958

    Abstract: No abstract text available
    Text: Ordering number:EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions • Excellent tf permitting efficient drive with less internal dissipation. unit:mm


    Original
    EN2549A 2SD1958 2SD1958] O-220ML 2SD1958 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage


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    2SD1950 PDF

    2SD1958

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1958 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output ·High-current switching applications PINNING PIN DESCRIPTION


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    2SD1958 O-220F O-220F) 500mA 2SD1958 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1957 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    2SD1957 PDF

    D304

    Abstract: 2SD2061 2SD1957 94L-1016-D304 D301
    Text: Transistors 2SD1957 2SD2061 94L-919–D301 (94L-1016-D304) 315


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    2SD1957 2SD2061 94L-919 94L-1016-D304) D304 2SD2061 2SD1957 94L-1016-D304 D301 PDF

    2SD1956

    Abstract: 2SD1957 ld7a
    Text: V 7. $ /Transistors 2SD1957 2SD1957 NPN v ' ; = i > h -7 > y 'z$ M J M i Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Sir>4Vi.V^i-r K ~7> • W Fi'+ jilll/D im e nsio n s Unit: mm • *8:1: 1) hFE : hFE= 3 0 0 (Typ.)o 2) Vce (sat) 'o V ce (sat)= 0.2V (Typ.)


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    2SD1957 T0-220 2SD1956 TQ-220FP fS14/Electrical 10MHz 2SD1956 2SD1957 ld7a PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1956 h "7 > v 7. $ / I ransistors 2SD1956 1 M il£ ? t : f r * ilfllff l/L o w Freq. Power Amp. • v r - y jv :V v ji- 7 - Triple Diffused Planar NPN Silicon Transistor • ^ J K ^ iiE l/D im e n s io n s Unit: mm w * 1) hFE / i S ^ ' : h F E = 300 (Typ.)o


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    2SD1956 2SD1957 PDF

    2SD1959

    Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
    Text: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983


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    2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD19CE 2SD1964 O-126) 2SD1959 2SB1301 2SD1951 2sd1944 2SD1948 2SD1940 2SD1947 PDF

    transistor D304

    Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304
    Text: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.


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    2SD1957 2SD2061 2SD1957 T0220FP 100ms 94L-1016-D304) transistor D304 D304 TRANSISTOR 2sd2061 D304 diode d304 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1950 is designed fo r general-purpose applications requiring High DC C urrent Gain. This is suitable fo r ah k in d o f d riv in g o r m uting. FEATURES •


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    2SD1950 2SD1950 PDF

    2SD1950

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1950 is designed f o r general-purpose applications requiring High DC C u rrent Gain. This is suitable fo r ail k in d o f d riv in g o r m uting.


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    2SD1950 2SD1950 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1957 2SD2061 Transistors Power Transistor 120V, 7A 2SD1957 1) ^Absolute maximum ratings (T a = 2 5 ‘C ) H ig h D C c u rre n t g a in . (1 6 0 ~ -5 0 0 ) 3) S ym bol L im its U n it C o lle c to r-b a s e v o lta q e V cbo 120 V C o lle c to r-e m ltte r v o lta g e


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    2SD1957 2SD2061 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c PDF

    Untitled

    Abstract: No abstract text available
    Text: 40 E ROHM CO L T D h* "7 > V D 7 f l E f l cm • 000 b 02 S 0 $ / T ransistors ESRHM 2SD1957 7 ^ 3 3 -0 9 Z S fD IS S T y ' j 3 > h 7 > V ^ $ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • 41-ï ï i' + ii El/Dimensions Unit: mm • W*


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    2SD1957 O-220FP O-220 2SD1956 PDF

    2SD1952

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD1952 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1952 is designed fo r audio frequency power amplifier and switching application, especially in Hybrid integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package


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    2SD1952 2SD1952 2SB1301 PDF

    2SD1956

    Abstract: No abstract text available
    Text: h ~ 7> y 2SD1956 $/ T r a n s i s t o r s o c n iD ftfi H s t È t f t y i x - ^ N P N v |j 3 > h 7 > v ^ i • v W Triple Diffuseci Planar NPN Silicon Transistor fé à lîJ & ^ ^ J iillIffl/L o w Freq. Power Amp. I w % # \# • ftJ ii'+ iiiE I/D im e n s io n s (Unit: mm


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    2SD1956 T0220FP O-220 SC-46 2SD1957 10MHz 2SD1956 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:E N 2 5 0 7 _ 2SD1953 NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers Features . Darlington connection . High DC current gain . Low dependence of DC current gain on temperature


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    2SD1953 20V/1 100jiA 4227TA M507-1/3 PDF

    957a

    Abstract: MG50G2CL3 2SD1960 MG50G2cl3 toshiba 2SC4328 2sd1111 2SC1841 2SD1577 2SD764 2SD947
    Text: - Sí € a * « Manuf. T y p e No. SANYO S TOSHIBA ZSÜ 336 Ä 2SD 937 3È S MG50G2CL3 2SD 938 3È ~2. MG5 0 G 2 C L 3 2SD 939 3£ $ MG50G2CL3 2SD 940 3K S 2SD 941 2SD 942 S: 3E S: 2 2SD 943 £ $ 2SD 946 fö T 2SD894 2 SO 946B te T 2SD1953 □— A 2SD 949


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    2SD936 2SD937 2SD938 2SD939 2SD940 2SD941 2SD942 2SD943 2SD946 2SD946B 957a MG50G2CL3 2SD1960 MG50G2cl3 toshiba 2SC4328 2sd1111 2SC1841 2SD1577 2SD764 2SD947 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:E N 2549A 2SD1958 NPN Triple Diffused Planar Silicon Transistor TV Horizontal Deflection Output, High-Current Switching Applications Features . Excellent permitting efficient drive with less internal dissipation Absolute Maxima Ratings at Ta=25 C


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    2SD1958 PDF