2SB1556
Abstract: No abstract text available
Text: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SB1556
2SD2385
2-21F1A
2SB1556
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2sb1556
Abstract: No abstract text available
Text: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SB1556
2SD2385
2-21F1A
2sb1556
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2SB1556
Abstract: 2SD2385
Text: SavantIC Semiconductor Product Specification 2SB1556 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplifier applications
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2SB1556
2SD2385
-140V;
2SB1556
2SD2385
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2SB1556
Abstract: 2SD2385 2-21F1A
Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2385
2SB1556
2-21F1A
2SB1556
2SD2385
2-21F1A
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Untitled
Abstract: No abstract text available
Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SD2385
2SB1556
2-21F1A
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hfe1
Abstract: 2SB1556 2SD2385 high hfe transistor 8aic
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 APPLICATIONS ·Designed for power amplifier applications
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-140V
2SD2385
-140V
hfe1
2SB1556
2SD2385
high hfe transistor
8aic
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2-21F1A
Abstract: 2SB1556 2SD2385
Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2385
2SB1556
2-21F1A
2-21F1A
2SB1556
2SD2385
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2-21F1A
Abstract: 2SB1556 2SD2385
Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SD2385
2SB1556
2-21F1A
2-21F1A
2SB1556
2SD2385
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2SB1556
Abstract: 2SD2385 high hfe transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 APPLICATIONS ·Designed for power amplifier applications
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-140V
2SD2385
-140V
2SB1556
2SD2385
high hfe transistor
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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a1000n
Abstract: common emitter amplifier 2-21F1A 2SB1556 2SD2385
Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SB1556
2SD2385
a1000n
common emitter amplifier
2-21F1A
2SB1556
2SD2385
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2SB1556
Abstract: 2-21F1A 2SD2385
Text: TO SH IBA 2SB1556 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR High Breakdown Voltage : V@EO - _ 140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO VCEO
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2SB1556
2SD2385
2SB1556
2-21F1A
2SD2385
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q e q = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO
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2SB1556
--140V
2SD2385
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TO SHIBA TRANSISTOR 2SB1556 nRi SILICON PNP EPITAXIAL TYPE D AR LIN G TO N POWER TRANSISTOR O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2385 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SB1556
2SD2385
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Untitled
Abstract: No abstract text available
Text: 2SD2385 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2385
2SB1556
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TC-2B
Abstract: No abstract text available
Text: g g Q SILICON PNP EPITAXIAL TYPE DARLINGTON POWER O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : Vc e O = -140V (Min.) Complementary to 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO v CEO v EBO ic CHARACTERISTIC Collector-Base Voltage
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-140V
2SD2385
Vol000-12000,
2SB1556
TC-2B
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2SB1556
Abstract: 2-21F1A 2SD2385
Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1556 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SB1556
--140V
2SD2385
2SB1556
2-21F1A
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2-21F1A
Abstract: 2SB1556 2SD2385
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : Vqeo = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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2SD2385
2SB1556
2-21F1A
2-21F1A
2SB1556
2SD2385
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER O PO W ER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V(Min.) Complementary to 2SB1556 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VfiBO VCEO VEB0 !C !B Collector Power Dissipation (Tc = 25°C) PC
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2SD2385
2SB1556
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2-21F1A
Abstract: 2SB1556 2SD2385
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2385 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1556 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2385
2SB1556
2-21F1A
2SB1556
2SD2385
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2SD2385
Abstract: 2-21F1A 2SB1556
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q ^o = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO
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2SD2385
2SB1556
2SD2385
2-21F1A
2SB1556
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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