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    2SD965 TRANSISTOR Search Results

    2SD965 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SD965 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR  FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V  APPLICATIONS


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    2SD965/A 2SD965: 2SD965A: 2SD965G-x-AB3-R OT-89 2SD965L-x-T92-B 2SD965G-x-T92-B 2SD965L-x-T92-K 2SD965G-x-T92-K 2SD965L-x-TN3-R PDF

    2SD965

    Abstract: 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR „ FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V „ APPLICATIONS


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    2SD965/A 2SD965: 2SD965A: 2SD965L/2SD965AL 2SD965G/2SD965AG 2SD965-x-AB3-R 2SD965-x-T92-B 2SD965-x-T92-K 2SD965-x-TN3-R 2SD965A-x-AB3-R 2SD965 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965/A 2SD965 2SD965A 2SD965L/2SD965AL QW-R201-007 PDF

    2SD965AL-AB3-R

    Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
    Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89


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    2SD965/A 2SD965 2SD965A OT-89 2SD965L/2SD965AL 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R OT-89 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965 PDF

    2SD965

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965/A 2SD965 2SD965A QW-R201-007 2SD965 PDF

    sot 89 2sd965

    Abstract: 2SD965
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965/A 2SD965 2SD965A OT-89 2SD965 2SD965A QW-R208-003 sot 89 2sd965 PDF

    2sd965

    Abstract: 2SD965A
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965/A 2SD965 2SD965A OT-89 QW-R208-003 2sd965 2SD965A PDF

    2SD965

    Abstract: No abstract text available
    Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965 2SD965 2SD965A O-252 2SD965A QW-R209-007 PDF

    2SD965

    Abstract: 2SD965A 2sd965 transistor
    Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965 2SD965 2SD965A O-252 QW-R209-007 2SD965A 2sd965 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965/A 2SD965 2SD965A 2SD965L/2SD965AL QW-R201-007 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    2SD965/A 2SD965 2SD965A QW-R201-007 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD965 NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2SD965 TRANSISTOR( NPN ) TO i 92 FEATURES 1.EMITTER Power dissipation PCM : 0.75 Collector current ICM : 5 W(Tamb=25℃) 2. COLLECTOR


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    2SD965 270TYP 050TYP 01-Jun-2002 PDF

    2SD965

    Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252


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    2SD965/A OT-89 2SD965: 2SD965A: O-252 2SD965L/2SD965AL 2SD965-x-AB3-R 2SD965L-x-AB3-R 2SD965-x-T92-B 2SD965L-x-T92-B 2SD965 2SD965AL 2sd965l 2sd965 transistor 2SD965A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T T RAN SI ST OR  FEAT U RES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 


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    2SD965/A 2SD965: 2SD965A: 2SD965L-x-AB3-R 2SD965L-x-T92-B 2SD965L-x-T92-K 2SD965L-x-TN3-R 2SD965AL-x-AB3-R 2SD965AL-x-T92-B 2SD965AL-x-T92-K PDF

    smd 2sd965

    Abstract: npn smd 2a 2SD965
    Text: Transistors IC SMD Type Silicon NPN epitaxial planar type 2SD965 Features Low collector-emitter saturation voltage VCE sat Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter


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    2SD965 smd 2sd965 npn smd 2a 2SD965 PDF

    2SD0965

    Abstract: 2SD965
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SD0965 2SD965) 2SD0965 2SD965 PDF

    2sd965 transistor

    Abstract: 2SD965 2SD96 transistor 2sd965
    Text: Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the low-voltage power supply.


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    2SD965 2sd965 transistor 2SD965 2SD96 transistor 2sd965 PDF

    2sd965 transistor

    Abstract: 2SD0965 2SD965
    Text: Transistor 2SD0965 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply.


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    2SD0965 2SD965) 2sd965 transistor 2SD0965 2SD965 PDF

    2sd965 transistor

    Abstract: 2SD965
    Text: DC COMPONENTS CO., LTD. 2SD965 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base


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    2SD965 100mA 2sd965 transistor 2SD965 PDF

    2SD965

    Abstract: 2sd965 transistor r10100 C8010 2SD965P
    Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SD965 2SD965 2sd965 transistor r10100 C8010 2SD965P PDF

    2SD965

    Abstract: C8010 2sd965 transistor
    Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SD965 2SD965 C8010 2sd965 transistor PDF

    2sd965

    Abstract: C8010 C5001
    Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SD965 2sd965 C8010 C5001 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package


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    OT-89-3L OT-89-3L 2SD965 PDF

    Untitled

    Abstract: No abstract text available
    Text: | FORWARD INTERNATIONAL ELECIRONICSLID. 2SD965 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES *H5gh current output up to 5A ♦Colfector-Emitter voltage ij> to 20V APPLICATIONS •Audio power amplifier


    OCR Scan
    2SD965 100uA PDF