Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS
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2SD965/A
2SD965:
2SD965A:
2SD965G-x-AB3-R
OT-89
2SD965L-x-T92-B
2SD965G-x-T92-B
2SD965L-x-T92-K
2SD965G-x-T92-K
2SD965L-x-TN3-R
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PDF
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2SD965
Abstract: 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS
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2SD965/A
2SD965:
2SD965A:
2SD965L/2SD965AL
2SD965G/2SD965AG
2SD965-x-AB3-R
2SD965-x-T92-B
2SD965-x-T92-K
2SD965-x-TN3-R
2SD965A-x-AB3-R
2SD965
2SD965AL
2SD965A
2sd965l
2sd965 transistor
sot 89 2sd965
2SD965AG
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965/A
2SD965
2SD965A
2SD965L/2SD965AL
QW-R201-007
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PDF
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2SD965AL-AB3-R
Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89
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Original
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2SD965/A
2SD965
2SD965A
OT-89
2SD965L/2SD965AL
2SD965-AB3-R
2SD965L-AB3-R
2SD965A-AB3-R
2SD965AL-AB3-R
OT-89
2SD965
2sd965 transistor
2sd965l
ab3r
sot 89 2sd965
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PDF
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2SD965
Abstract: No abstract text available
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965/A
2SD965
2SD965A
QW-R201-007
2SD965
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PDF
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sot 89 2sd965
Abstract: 2SD965
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965/A
2SD965
2SD965A
OT-89
2SD965
2SD965A
QW-R208-003
sot 89 2sd965
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PDF
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2sd965
Abstract: 2SD965A
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965/A
2SD965
2SD965A
OT-89
QW-R208-003
2sd965
2SD965A
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PDF
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2SD965
Abstract: No abstract text available
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965
2SD965
2SD965A
O-252
2SD965A
QW-R209-007
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PDF
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2SD965
Abstract: 2SD965A 2sd965 transistor
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965
2SD965
2SD965A
O-252
QW-R209-007
2SD965A
2sd965 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965/A
2SD965
2SD965A
2SD965L/2SD965AL
QW-R201-007
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
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Original
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2SD965/A
2SD965
2SD965A
QW-R201-007
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD965 NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2SD965 TRANSISTOR( NPN ) TO i 92 FEATURES 1.EMITTER Power dissipation PCM : 0.75 Collector current ICM : 5 W(Tamb=25℃) 2. COLLECTOR
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2SD965
270TYP
050TYP
01-Jun-2002
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PDF
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2SD965
Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252
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Original
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2SD965/A
OT-89
2SD965:
2SD965A:
O-252
2SD965L/2SD965AL
2SD965-x-AB3-R
2SD965L-x-AB3-R
2SD965-x-T92-B
2SD965L-x-T92-B
2SD965
2SD965AL
2sd965l
2sd965 transistor
2SD965A
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T T RAN SI ST OR FEAT U RES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V
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Original
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2SD965/A
2SD965:
2SD965A:
2SD965L-x-AB3-R
2SD965L-x-T92-B
2SD965L-x-T92-K
2SD965L-x-TN3-R
2SD965AL-x-AB3-R
2SD965AL-x-T92-B
2SD965AL-x-T92-K
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smd 2sd965
Abstract: npn smd 2a 2SD965
Text: Transistors IC SMD Type Silicon NPN epitaxial planar type 2SD965 Features Low collector-emitter saturation voltage VCE sat Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter
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2SD965
smd 2sd965
npn smd 2a
2SD965
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2SD0965
Abstract: 2SD965
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD0965
2SD965)
2SD0965
2SD965
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PDF
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2sd965 transistor
Abstract: 2SD965 2SD96 transistor 2sd965
Text: Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the low-voltage power supply.
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2SD965
2sd965 transistor
2SD965
2SD96
transistor 2sd965
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PDF
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2sd965 transistor
Abstract: 2SD0965 2SD965
Text: Transistor 2SD0965 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply.
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Original
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2SD0965
2SD965)
2sd965 transistor
2SD0965
2SD965
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PDF
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2sd965 transistor
Abstract: 2SD965
Text: DC COMPONENTS CO., LTD. 2SD965 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base
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2SD965
100mA
2sd965 transistor
2SD965
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PDF
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2SD965
Abstract: 2sd965 transistor r10100 C8010 2SD965P
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD965
2SD965
2sd965 transistor
r10100
C8010
2SD965P
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PDF
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2SD965
Abstract: C8010 2sd965 transistor
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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Original
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2SD965
2SD965
C8010
2sd965 transistor
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PDF
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2sd965
Abstract: C8010 C5001
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD965
2sd965
C8010
C5001
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package
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OT-89-3L
OT-89-3L
2SD965
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PDF
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Untitled
Abstract: No abstract text available
Text: | FORWARD INTERNATIONAL ELECIRONICSLID. 2SD965 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES *H5gh current output up to 5A ♦Colfector-Emitter voltage ij> to 20V APPLICATIONS •Audio power amplifier
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OCR Scan
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2SD965
100uA
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PDF
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