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    2SJ172 Search Results

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    2SJ172 Price and Stock

    Rochester Electronics LLC 2SJ172-E

    MOSFET P-CH 60V 10A
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    DigiKey 2SJ172-E Bulk 107
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    • 1000 $2.83
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    Renesas Electronics Corporation 2SJ172-E

    Trans MOSFET P-CH Si 60V 10A 3-Pin(3+Tab) TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SJ172-E 1,093 118
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    Rochester Electronics 2SJ172-E 1,093 1
    • 1 $2.72
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    • 100 $2.56
    • 1000 $2.31
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    Renesas Electronics Corporation 2SJ172

    TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,10A I(D),TO-220AB
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    Quest Components 2SJ172 50
    • 1 $8.1
    • 10 $8.1
    • 100 $4.995
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    Hitachi Ltd 2SJ17291

    Electronic Component
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    ComSIT USA 2SJ17291 12,577
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    2SJ172 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ172 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ172 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ172 Unknown Scan PDF
    2SJ172 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ172 Unknown FET Data Book Scan PDF
    2SJ172 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ172 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SJ172 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ172

    Abstract: Hitachi 2SJ Hitachi DSA0015
    Text: 2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SJ172 O-220AB D-85622 2SJ172 Hitachi 2SJ Hitachi DSA0015

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


    Original     		PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122

    2sj172

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ443 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SJ443 O-220CFM D-85622 2sj172 Hitachi 2SJ Hitachi DSA001651

    2SJ214

    Abstract: 2sj172 2SJ214S Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ214 L , 2SJ214(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SJ214 2sj172 2SJ214S Hitachi 2SJ Hitachi DSA001651

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A


    Original     		PDF 4AM14 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    2SJ175

    Abstract: 2SJ172 Hitachi DSA0015
    Text: 2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SJ175 O-220FM 2SJ175 2SJ172 Hitachi DSA0015

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • Capable of 4 V gate drive


    Original     		PDF 6AM11 2SK970, 2SK1093 2SJ172, 2SJ175 SP-12 D-85622 Hitachi 2SJ Hitachi DSA002751

    2SK1778

    Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
    Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247


    OCR Scan     		PDF 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK13003 2SK1665 2SK1778 27.145 2SK1296 2SJ172 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302

    j172

    Abstract: HITACHI 166 2SJ172 Hitachi 2SJ
    Text: 2SJ172 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SJ172 j172 HITACHI 166 2SJ172 Hitachi 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SJ172 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SJ172 -220AB

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ172 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SJ172 D-85622 Hitachi 2SJ

    2SJ172

    Abstract: H150
    Text: HITACHI 2SJ172 SILIC O N P-C HAN NEL M O S F ET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device — Can be driven from 5 V source • Suitable for Motor Drive, DC-DC Converter, Power


    OCR Scan     		PDF 2SJ172 O-220AB) Tc-25 2SJ172 H150

    Untitled

    Abstract: No abstract text available
    Text: 2SJ443 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V Gate drive can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		PDF 2SJ443 2SJ172, 2SJ175

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK1778

    Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


    OCR Scan     		PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972

    2SJ172

    Abstract: 2SJ175 2SK1093 2SK970 6AM11 AM11 SP-12
    Text: HITACHI 6AM11 S IL IC O N N-CHANNEL/P-CHANM EL P O W E R M O S F E T A R R A Y HIGH SPEED POW ER SWITCHING • FEA TU RES A.OtO. 2 • Low Qn-Resistance N-channel: Ros on ^ 0.17 Q , VG3 = 10 V, lD= 2.5 A P-channef: RDS (on) ^ 0.2 Q , VQS = -10 V, iD= -2.5 A


    OCR Scan     		PDF 6AM11 2SK970 2SK1093 2SJ172 2SJ175 2SJ175 6AM11 AM11 SP-12

    2SJ175

    Abstract: No abstract text available
    Text: 2SJ175 Silicon P-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • High speed sw itching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for m otor drive, D C -D C converter, pow er sw itch and solenoid drive


    OCR Scan     		PDF 2SJ175 2SJ172 2SJ175

    Untitled

    Abstract: No abstract text available
    Text: 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0 .1 7 Q , V os = 10 V , ID = 2.5 A P-channel: RDS(on) < 0.2 Q , V os = - 1 0 V, ID = -2 .5 A • Capable o f 4 V gate drive


    OCR Scan     		PDF 4AM11 2SJ172, 2SJ175 SP-10

    lf7a

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive


    OCR Scan     		PDF 6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 lf7a

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    Untitled

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A


    OCR Scan     		PDF 6AM12 2SK970 T0-220AB) 2SK1093 T0-220FM) 2SJ172 TQ-220AB) 2SJ175 TQ-220FM)