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    2SJ68 Search Results

    2SJ68 Result Highlights (2)

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    2SJ687-ZK-E2-AY Renesas Electronics Corporation Pch Single Power Mosfet -20V -20A 7.0Mohm Mp-3Zk/To-252, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation
    2SJ687-ZK-E1-AY Renesas Electronics Corporation Pch Single Power Mosfet -20V -20A 7.0Mohm Mp-3Zk/To-252 Visit Renesas Electronics Corporation
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    2SJ68 Price and Stock

    TE Connectivity ROX2SJ68K

    RES 68K OHM 5% 2W AXIAL
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    TE Connectivity ROX2SJ68R

    RES 68 OHM 5% 2W AXIAL
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    TE Connectivity ROX2SJ680R

    RES 680 OHM 5% 2W AXIAL
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    Renesas Electronics Corporation 2SJ687-ZK-E1-AY

    MOSFET P-CH 20V 20A TO252
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    TE Connectivity ROX2SJ680K

    RES 680K OHM 5% 2W AXIAL
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    2SJ68 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ68 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ68 Unknown FET Data Book Scan PDF
    2SJ68 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ68 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ680 Toshiba Field Effect Transistor / Silicon P-Channel MOS Type Original PDF
    2SJ680 Toshiba Japanese - Transistors - Mosfets Original PDF
    2SJ681 Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Original PDF
    2SJ681(Q) Toshiba 2SJ681 - MOSFET P-CH 60V 5A PW-MOLD Original PDF
    2SJ683-TL-E SANYO Electric FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 65A ZP Original PDF
    2SJ687 NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    2SJ687-ZK-E1-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    2SJ687-ZK-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -20V -20A TO-252 Original PDF
    2SJ687-ZK-E2-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF

    2SJ68 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SJ684 Ordering number : ENA1058 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ684 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SJ684 ENA1058 A1058-4/4

    J681

    Abstract: 2SJ681 tr j681
    Text: 2SJ681 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII 2SJ681 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 1.5±0.2 単位: mm 6.5±0.2 5.2±0.2 0.6 MAX.


    Original
    PDF 2SJ681 J681 2SJ681 tr j681

    2SJ680

    Abstract: J680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Unit: mm 1.5 ± 0.2 Chopper Regulator, DC/DC Converter and Motor Drive Applications • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 A (max) (VDS = −200 V)


    Original
    PDF 2SJ680 2SJ680 J680

    2SJ684

    Abstract: A1058 100v 23A P-Channel MOSFET
    Text: 2SJ684 Ordering number : ENA1058 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ684 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SJ684 ENA1058 PW10s, A1058-4/4 2SJ684 A1058 100v 23A P-Channel MOSFET

    2SJ687

    Abstract: 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)


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    PDF 2SJ687 2SJ687 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY O-252 O-252) 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY

    J680

    Abstract: TOSHIBA NOTE 2SJ680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)


    Original
    PDF 2SJ680 J680 TOSHIBA NOTE 2SJ680

    Untitled

    Abstract: No abstract text available
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOS V 2SJ680 Switching Applications Unit: mm 1.5 ± 0.2 Chopper Regulator, DC/DC Converter and Motor Drive Applications • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 A (max) (VDS = −200 V)


    Original
    PDF 2SJ680

    2SJ680

    Abstract: J680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 5.2±0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original
    PDF 2SJ680 2SJ680 J680

    J681

    Abstract: transistor J681 j681 transistor 2SJ681
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    PDF 2SJ681 J681 transistor J681 j681 transistor 2SJ681

    zp 33a

    Abstract: diode marking 33a on semiconductor 2SJ683 marking 33a on semiconductor A1057
    Text: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SJ683 ENA1057 PW10s, A1057-4/4 zp 33a diode marking 33a on semiconductor 2SJ683 marking 33a on semiconductor A1057

    transistor J681

    Abstract: 2sj681 J681 j681 transistor
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    PDF 2SJ681 transistor J681 2sj681 J681 j681 transistor

    2SJ680

    Abstract: J680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original
    PDF 2SJ680 2SJ680 J680

    2SJ681

    Abstract: J681 tr j681 J68-1
    Text: 2SJ681 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII 2SJ681 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 1.5±0.2 単位: mm 6.5±0.2 5.2±0.2 0.6 MAX.


    Original
    PDF 2SJ681 2SJ681 J681 tr j681 J68-1

    Untitled

    Abstract: No abstract text available
    Text: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SJ683 ENA1057 A1057-4/4

    transistor J681

    Abstract: J681 j681 transistor 2sj681
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 z 4-V gate drive 1.6 z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    PDF 2SJ681 transistor J681 J681 j681 transistor 2sj681

    2sj6806

    Abstract: 2SJ680 J680
    Text: 2SJ680 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ680 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 1.5 ± 0.2 単位: mm 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)


    Original
    PDF 2SJ680 20070701-JA 2sj6806 2SJ680 J680

    transistor J681

    Abstract: 2SJ681 J681 j681 transistor tr j681
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original
    PDF 2SJ681 transistor J681 2SJ681 J681 j681 transistor tr j681

    Untitled

    Abstract: No abstract text available
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 5.2±0.2 High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)


    Original
    PDF 2SJ680

    J680

    Abstract: 2SJ680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)


    Original
    PDF 2SJ680 J680 2SJ680

    j681 transistor

    Abstract: No abstract text available
    Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 z 4-V gate drive z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    PDF 2SJ681 j681 transistor

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original
    PDF

    TN6Q04

    Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
    Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15


    Original
    PDF O-220MF O-220FI O-220FI5H O-220ML O-126 O-126LP O-126ML O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original
    PDF SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919