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    2SJ680 Price and Stock

    TE Connectivity ROX2SJ680R

    RES 680 OHM 5% 2W AXIAL
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    DigiKey ROX2SJ680R Ammo Pack 11,000 1,000
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    Avnet Americas ROX2SJ680R Bulk 13 Weeks, 5 Days 12,000
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    TE Connectivity ROX2SJ680K

    RES 680K OHM 5% 2W AXIAL
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    DigiKey ROX2SJ680K Cut Tape 3,640 1
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    ROX2SJ680K Ammo Pack 3,000 1,000
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    Mouser Electronics ROX2SJ680K
    • 1 $0.4
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    Newark ROX2SJ680K Bulk 12,000
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    Panasonic Electronic Components ERG-2SJ680

    RES 68 OHM 5% 2W AXIAL
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    Onlinecomponents.com ERG-2SJ680 4,635
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    Master Electronics ERG-2SJ680 4,635
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    Panasonic Electronic Components ERG-2SJ680A

    RES 68 OHM 5% 2W AXIAL
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    Master Electronics ERG-2SJ680A 1,501
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    TE Connectivity ROX2SJ680R (ALTERNATE: 6-1625890-4)

    ROX2S Series Axial Metal Film Resistor 680Ohms +/-5% 2W +/-300ppm/degC | TE Connectivity ROX2SJ680R
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    RS ROX2SJ680R (ALTERNATE: 6-1625890-4) Bulk 10
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    Find more 2SJ680 price and stock on Findchips.com

    2SJ680 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ680 Toshiba Field Effect Transistor / Silicon P-Channel MOS Type Original PDF
    2SJ680 Toshiba Japanese - Transistors - Mosfets Original PDF

    2SJ680 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ680

    Abstract: J680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Unit: mm 1.5 ± 0.2 Chopper Regulator, DC/DC Converter and Motor Drive Applications • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 A (max) (VDS = −200 V)


    Original     		PDF 2SJ680 2SJ680 J680

    J680

    Abstract: TOSHIBA NOTE 2SJ680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SJ680 J680 TOSHIBA NOTE 2SJ680

    Untitled

    Abstract: No abstract text available
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOS V 2SJ680 Switching Applications Unit: mm 1.5 ± 0.2 Chopper Regulator, DC/DC Converter and Motor Drive Applications • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 A (max) (VDS = −200 V)


    Original     		PDF 2SJ680

    2SJ680

    Abstract: J680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications ５．２±０．２ Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ680 2SJ680 J680

    2SJ680

    Abstract: J680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ680 2SJ680 J680

    2sj6806

    Abstract: 2SJ680 J680
    Text: 2SJ680 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ680 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 1.5 ± 0.2 単位: mm 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)


    Original     		PDF 2SJ680 20070701-JA 2sj6806 2SJ680 J680

    Untitled

    Abstract: No abstract text available
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications ５．２±０．２ High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)


    Original     		PDF 2SJ680

    J680

    Abstract: 2SJ680
    Text: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SJ680 J680 2SJ680

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram