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    2SK 111 Search Results

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    2SK 111 Price and Stock

    Toshiba America Electronic Components 2SK1119(F)

    MOSFET N-CH 1000V 4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1119(F) Tube 50
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    • 100 $2.7636
    • 1000 $2.7636
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    Glenair Inc 780-001-11G12-SK

    Circular MIL Spec Tools, Hardware & Accessories UNIVERSAL COVER 1.05 ROUND W/ NYLON ROPE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 780-001-11G12-SK
    • 1 -
    • 10 $113.47
    • 100 $59.22
    • 1000 $59.22
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    Toshiba America Electronic Components 2SK1118

    TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,6A I(D),SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1118 209
    • 1 $13.5
    • 10 $13.5
    • 100 $5.4
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    Chip 1 Exchange 2SK1118 1,211
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    Component Electronics, Inc 2SK1118 107
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    ROHM Semiconductor 2SK1118

    TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,6A I(D),SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1118 49
    • 1 $13.5
    • 10 $6.75
    • 100 $5.85
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    Toshiba America Electronic Components 2SK1116

    Electronic Component
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    ComSIT USA 2SK1116 50
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    2SK 111 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK111 Unknown FET Data Book Scan PDF
    2SK111 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK111 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK111 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK1112 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1112 Toshiba Original PDF
    2SK1112 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1112 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1113 Toshiba Original PDF
    2SK1113 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1113 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1113 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1113 Unknown Scan PDF
    2SK1114 Toshiba Original PDF
    2SK1114 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1114 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1114 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1115 Toshiba Original PDF
    2SK1115 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1115 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK 111 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original
    O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l PDF

    2SK2159

    Abstract: 2SK680A 2SJ199 2SJ197 mmtf1n10
    Text: N & P CHANNEL MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 0.5A TO 5A • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V SINGLE N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BST120 BST122 BST80 IRFL014 IRFL110 IRFL2605 IRFL9014 IRLL014 IRLL110


    Original
    2SK1959 2SK1960 2SK2053 2SK2159 2SK1583 2SK1585 2SK1587 2SK1588 2SK1584 2SK1586 2SK680A 2SJ199 2SJ197 mmtf1n10 PDF

    MOSFET TOSHIBA 2SK

    Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
    Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.


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    PDF

    D1859

    Abstract: NP110N04PUG POWER MOS FET 2sj 2sk MP-25ZJ NP36P06SLG NP52N055SUG np82n055 NP55N04SUG NP55N055SDG NP60N03KUG
    Text: Power MOS FET NP series Ultra-Low On-Resistance Series Suitable for Automotive Electronic Applications The NP Series has been designed to meet the demanding requirements in the field of automotive electronics. The channel temperature rating is 175°C max., which is 25°C higher than that of 2SK/2SJ Series. The NP Series realizes the


    Original
    D18595EJ1V0PF00 D1859 NP110N04PUG POWER MOS FET 2sj 2sk MP-25ZJ NP36P06SLG NP52N055SUG np82n055 NP55N04SUG NP55N055SDG NP60N03KUG PDF

    2SK series

    Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
    Text: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153


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    2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series PDF

    transistor 2sk

    Abstract: transistor+2sk
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2313 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK 2313) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


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    2SK2313 100/j 2SK2313 398//H transistor 2sk transistor+2sk PDF

    2SK2388

    Abstract: 1B10B N3I3
    Text: TOSHIBA Discrete Semiconductors 2SK 2388 Unit in mm Silicon N Channel MOS Type c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-DC Converter and Motor Drive Applications. • • • • Low Drain-Source ON Resistance: fSs{ON)= 1-8£2(Typ.)


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    2SK2388 0DE174T 0D2175D 1B10B N3I3 PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan
    2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL PDF

    12N60FI

    Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90


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    2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118 2SK1119 2SK1120 2SK1154 2SK1156 12N60FI K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL PDF

    Transistor D 2599

    Abstract: No abstract text available
    Text: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)


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    2SK2599 100//A Transistor D 2599 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1579 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Suitable for low voltage operation Outline UPAK OD 1. Gate 2. Drain 3. Source 4. Drain ÓS 2SK 1579 Absolute Maximum Ratings Ta = 25°C unless otherwise specified.


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    2SK1579 PDF

    2SJ112

    Abstract: 2SJ112-TYPIC j112 fet
    Text: H I T A C H I / í O P T OE LE CT RO NI C S} 73 HITACHI ! .DP IÖLLEC IKUN ICS DE.[LlLllit3SD5 P O D ^ a □ 73C 09948 D • z 3 2S J112 SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 398


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    PDF

    2SB 545

    Abstract: 030VC60 smd tra 14 SMD T26 1AMM ST0220 Am 170 415
    Text: Basic Ordering and Packing Form Explanation o f P acking L is ts 1. Type No. Example 1 D1ND ^- R everse voltage X 1/10. Example 2 2SK 2663 E IA J No. E IA J C lassification. 2SA , 2SB , 2S C , 2SD T ra n s is to r 2 S J : M osfet Reel width 2. Code No.


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    D15V060 030VC60 2SB 545 smd tra 14 SMD T26 1AMM ST0220 Am 170 415 PDF

    8672s

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK867, 2SK867A 2SK 867, 2 S K 8 6 7 A Silicon N-channel Power F-MOS FET P a ck a g e D im ensions • F e a tu re s • • • • Low ON resistan ce R ds on : RDs (on) = 0 .3 il (typ.) High sw itching ra te : tf= 120ns (typ.) No secondary breakdow n


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    2SK867, 2SK867A 120ns 2SK867 2SK867A 8672s PDF

    transistor et 454

    Abstract: 2sk542 DC-DC H14 F530 T108 T460
    Text: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS


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    2SK542 2SK542Ã transistor et 454 2sk542 DC-DC H14 F530 T108 T460 PDF

    2SK2510

    Abstract: Diode KD 521 a transistor DK qj diode sg 5 ts b 772 p
    Text: h 7 > y X ? MOS Field Effect Transistor 2SK2510 FET iif f l 2SK 2510ßN 3l * * ; M t I ! / t 7 - M O S F E T T ', 7 « o 4y % m > f f l m . x t 0 R ds on 1 = 2 0 m û l ^ : ( @ V gs = 1 0 V , R ds (on) 2 = 3 0 m ( @ V gs = 4 V , Id = 2 0 A ) Id = 2 0 A )


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    2SK2510 MP-45F O-220) 2SK2510 Diode KD 521 a transistor DK qj diode sg 5 ts b 772 p PDF

    transistor jsx

    Abstract: 2SK681 ipw fet s0822 t460 transistor
    Text: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)


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    2SK681 transistor jsx 2SK681 ipw fet s0822 t460 transistor PDF

    2SK735

    Abstract: 26-JS transistor BJ 932 3e tRANSISTOR la 5531 JMT460 T108 transistor st 932 LF POWER FET TRANSISTOR EH FET TC-6272
    Text: - f — S 7 • S '— h M O S Field E ffe c t P o w e r T ran sis to r 2SK735 N ^-•Y^JW<r7— M O S F E T m It f f l 2SK 735 i, t-tt-> œ rÆ > * 'iiS < , x ^ . y f > ^ > / < - ? h ï ^ ' !7 14^ 'is - iiT & u , KMM M O S F E T ¡e u s ( T O : mm * 4


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    2SK735 75lMl 26-JE 247-IS) 32-tS 29-Jt 354-fi 27-ffiffi 2SK735 26-JS transistor BJ 932 3e tRANSISTOR la 5531 JMT460 T108 transistor st 932 LF POWER FET TRANSISTOR EH FET TC-6272 PDF

    TRANSISTOR BH RW

    Abstract: k1272 fbii 2SK1272 s45l
    Text: • 5 /— h Field E ffe ct P o w e r T ra n sisto r 2SK 1272 ✓<l7 — M O S N 1 - ^ ^ V mJ m O S 2SK1272ÌÌ, FETT", 5 V « ì H S J C Æ tS i^ tlj^ 'n T H b Î c x 7 f > 7 • * < , -? , « Œ y i / Z j F, 4 IE » ? FET ¿> « H I W iim m ) X T 't .


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    2SK1272 2SK1272Ì X108-01 TRANSISTOR BH RW k1272 fbii 2SK1272 s45l PDF

    2sk1150

    Abstract: b 772 my1 PS7K 2SK 1411 t8506
    Text: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .


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    2SK1150 50tti 2sk1150 b 772 my1 PS7K 2SK 1411 t8506 PDF

    Mosfet T460

    Abstract: T460 mosfet LI 803-2 NEC IEI-620 2SK2413 b4sb C947
    Text: _L * IK I • M O S B Â l^ e jÆ M O S N E C ^ M O S F ie ld E f fe c t T r a n s is t o r 2 N 51* FET S K 2 4 1 3 ^ ;U /N ° 7 - M O S F E T ^ 'y Æ l i f f l m m miiL : mm; 2SK 2413(âN ^ + ^ ;U iÉ M /\°7 -M O S F E T T ', fêfêjFflft T * U, ^-fST7


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    MP-10 Mosfet T460 T460 mosfet LI 803-2 NEC IEI-620 2SK2413 b4sb C947 PDF

    TC-799

    Abstract: NEC 2sk2134 nec 2134 2sk2134
    Text: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.


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    2SK2134, 2SK2134-Z 2SK2134-Z IEI-1209) 2134-Z TC-799 NEC 2sk2134 nec 2134 2sk2134 PDF

    2n 3904 411

    Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
    Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13


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    1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1815 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - • Features • • • • • TTT r -111 o h n l t o I Outline Drawings High current Low no-resistance No secondary breakdown Low driving power High forward Transconductance


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    2SK1815 DDQ310D PDF