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    2SK1152S Search Results

    2SK1152S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1152STR-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 1.5A 6000Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SK1152S Price and Stock

    Hitachi Ltd 2SK1152STR

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    Quest Components 2SK1152STR 4,717
    • 1 $3.204
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    • 1000 $1.7622
    • 10000 $1.602
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    Renesas Electronics Corporation 2SK1152S

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 1.5 A;
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    Vyrian 2SK1152S 135
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    Hitachi Ltd 2SK1152(S)

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
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    Vyrian 2SK1152(S) 32
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    2SK1152S Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1152(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK1152S Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1152S Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1152S Kexin N-Channel MOSFET Original PDF
    2SK1152(S) Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1152S Renesas Technology Low On-Resistance, Low Drive, 500V 1.5A, Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    2SK1152S Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1152S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK1152S Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2SK1152S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1152S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1 3.80


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    2SK1152S O-252 PDF

    smd mosfet 400v 1A

    Abstract: 1A smd mosfet 2SK1152S
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1152S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15


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    2SK1152S O-252 smd mosfet 400v 1A 1A smd mosfet 2SK1152S PDF

    2SK1151

    Abstract: 2SK1151STL-E 2SK1152 PRSS0004ZD-A PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    2SK1151

    Abstract: 2SK1151STL-E 2SK1152 PRSS0004ZD-A PRSS0004ZD-C
    Text: 2SK1151 L , 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous: ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current


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    2SK1151 2SK1152 REJ03G0907-0200 ADE-208-1245) PRSS0004ZD-A PRSS0004ZD-C 2SK1151STL-E PRSS0004ZD-A PRSS0004ZD-C PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF