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    2SK120 Price and Stock

    Hitachi Ltd 2SK1204

    POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1204 214
    • 1 $3.75
    • 10 $3.75
    • 100 $1.875
    • 1000 $1.625
    • 10000 $1.625
    Buy Now

    2SK120 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK120 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK120 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK120 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK120 Unknown FET Data Book Scan PDF
    2SK1200 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1200 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK1200 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1200 Unknown FET Data Book Scan PDF
    2SK1201 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1201 Hitachi Semiconductor N-Channel Silicon Power Mosfet Scan PDF
    2SK1201 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1201 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1201 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK120-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1201 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SK120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    2SK1200

    Abstract: No abstract text available
    Text: • 2SK1200 44clbEGS 0013233 534 ■ H I T 4 HITACHI/COPTOELECTRONICS blE » S ILIC O N N -C H A N N E L M OS F E T HIGH SPEED POWER SWITCHING ■ FEATURES 1. Gate 2. Drain Flange) 3. Source • Low On-Resistance • • High Speed Switching Low Drive Current


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    PDF 44clbEGS cycleS19Ã Tc-25 -J400V 2SK1200 001323b

    B20S

    Abstract: 2SK1205
    Text: M4Tb2G5 QQ13253 G22 • H I T M 2SK1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. G*le 2. Drain Flange ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 3. Source (Dimensions i, jl 0.6±02 • No Secondary Breakdown


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    PDF 2SK1205 QQ13253 001323b K1205----------------------------HITACHI/ B20S 2SK1205

    SG-313

    Abstract: SG313 2sk1204
    Text: 2SK1204 • MM Tb EÜ S O Q I B E H ^ bTl ■ H I T M HITACHI/ O P T O E L E C T R O N I C S blE J> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 1. Gate 2. Drain (Flange)


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    PDF 2SK1204 SG-313 SG313 2sk1204

    2sk1203

    Abstract: DA468
    Text: • 2SK1203 4iHb2DS GG13245 TSb ■ H I T 4 HITACHI/ OPTOELECTRONICS blE ]> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • • Low On-Resistance High Speed Switching • Low Drive Current 1 .G ile 2 . D rain (Flan ge) 3 . S o u rce


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    PDF 2SK1203 GG13245 SK1203 2sk1203 DA468

    2SK1227

    Abstract: 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 2SK1231 2SK120 csd 1060
    Text: ft f m % ít ffl € m m & X % * fr K * V ft (V) 2SK1203 a i SW-Reg, D D C MOS N E 9 00 D S S ±20 2SK1204 H i SW-Reg, D D C MO S N E 900 D SS ±20 a» X P d/Pc h I* ft* (A) (max) (A) Vd s (V) (min) (V) (max) V d s (V) (V) (13=25^) tí g m (min) (typ)


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    PDF 2SK1203 2SK1204 2SK1205 2SK1206 2SK1211 2SK1230 115nstyp 2SK1231 2SK1232 2SK1227 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 2SK1231 2SK120 csd 1060

    2SK1202

    Abstract: TTL-T100
    Text: 2SK1202- • L|inb2ü5 ÜD13241 30Q ■ H I T M HITACHI/ OPTOELECTRONICS blE D" SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1.G ate, 2 .D rain (Flange) 3. Source (Dimensions in nm ) ■jP • Low On-Resistance • High Speed Switching


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    PDF 2SK1202SILICON D13241 Tc--25 2SK1202 TTL-T100

    K1201

    Abstract: No abstract text available
    Text: MMTbEDS 0D13E37 TÔT • H I T M 2SK1201 HI TACHI/ OPTOELECTRONICS blE D S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1.G ate 2. D rain (Flange) 3. Source (Dimensions in mm) Low On-Resistance • High Speed Switching


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    PDF 2SK1201 0D13E37 DD1323S K1201

    kds 8a

    Abstract: KDS 7c KDS 4a a7ds
    Text: 2SK1204 SILICON N-CHANNEL MOS FET mm m •I • X 'f ? f - > ? ' P DC —DC 3 .x , 0.9 >ut 5.45 ± 0 .5 {Ta=25”C • ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage Gâte* Source Voltage Drain C urrent Drain Peak Current Body-Drain Diode Reverse Drain Current


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    PDF Tc-25 Kds-10V -100A/ kds 8a KDS 7c KDS 4a a7ds

    2SK1202

    Abstract: LM 464 diode silicon P channel MOS FET J 350 Hitachi Scans-001 koss
    Text: • 2SK1202 MHIbSQS 0013241 300 ■ HITM HITACHI/ÍOPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET b lE »' g HIGH SPEED POWER SW ITCHING ■ FEATURES • • • • • 1.G ate, 2 . D ra in F la n g e ) Low On-Resistance High Speed Switching Low Drive Current


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    PDF 2SK1202 2SK1202 LM 464 diode silicon P channel MOS FET J 350 Hitachi Scans-001 koss

    2SK1200

    Abstract: h1a0
    Text: • 2SK1200 44clbEGS 0013233 534 ■ H I T 4 HITACHI/COPTOELECTRONICS blE » S ILIC O N N -C H A N N E L M OS F E T HIGH SPEED POWER SWITCHING ■ FEATURES 1. Gate 2. Drain Flange) 3. Source • Low On-Resistance • • High Speed Switching Low Drive Current


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    PDF 44clbEGS 001323b 2SK1200 h1a0

    2SK1225

    Abstract: 2SK1206
    Text: IHITM HHThEOS 0013257 77fl blE D 2SK1206,ZSK122d SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator, DC-DC Converter


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    PDF 2SK1225 2SK1206 M41b505 G0132b0 2SK1206, 2SK1225-

    2SK1202

    Abstract: 2SK120 koss
    Text: • 2SK1202 MHIbSQS 0013241 3Q0 ■ HITM HITACHI / OPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET blE D" g HIGH SPEED POWER SW ITCHING 3 ■ FEATURES 1 .G ate, 2 .D rain (Flange) 3. Source (Dimensions in ran ) L Ï* • • • • • Low On-Resistance


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    PDF 2SK1202 2SK12 2SK1202 2SK120 koss

    D3A DIODE

    Abstract: No abstract text available
    Text: 2SK1203 SILICON N-CHANNEL MOS FET •& • X 'f fi -vi->-r • X 'f y -f- > ^ U ^ .a U - ? DC—DC ^ 3.6 B 0.9 1. Gate 2. Drain Flange 3. Source (D imensions in mm) rue i u- rl 5.45 ± 0.5 5.45 ± 0 5 (TO-3P) ■ ABSOLUTE MAXIMUM RATINGS ( 7 a = 25°C) R ating


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    PDF Tc-25 Ta-25 Vos-720V, Vds-20V* 00A/j D3A DIODE

    K1225

    Abstract: IR6A 2SKI20 diodo 2B 2SK1206 2SK1225 2SK556 2SK557 K 250 diode
    Text: 2SK1206,2SK1225 ya SILICON N -C H A N N E L M O S F E T w a r * / * * -t + y f B # ft •t • x 4 7 + V f - x € - Y f r i *1 » . • « • « * # * ¿1 » . • X-f r f y 7 t * ¥ A U - f , D C -D C 3 W * - 9 . T O -3 P -F M ) « - e K 9 4 '< t t £ lt M .


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    PDF 2SK1206 2SK1225 2SKI225 2SKI206 K1225 2SKI20* VW-10V. 2SK556. 2SK557 IR6A 2SKI20 diodo 2B 2SK1225 2SK556 K 250 diode

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    FET 2SK125

    Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
    Text: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D


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    PDF 2SK84 2SK85 2SK87 2SK89 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 FET 2SK125 FET 2SK109 2SK109 2SK105 2sk109a 2SK120 2SK107 2SK124

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


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    PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235