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    2SK121 Price and Stock

    Molex 173107-0113

    D-Sub Mixed Contact Connectors FM27W2 SOCKET
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    Mouser Electronics 173107-0113
    • 1 $17.68
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    • 100 $14.78
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    Molex 173107-0475

    D-Sub Mixed Contact Connectors FCT ML DSUB SLD RCPT W/FLOAT FMW17W2SK12
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    Mouser Electronics 173107-0475
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    FCT electronic FM7W2S-K121

    D-Sub Mixed Contact Connectors Socket 5 Pin 2 Hole |Molex/fct FM7W2S-K121
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    Newark FM7W2S-K121 Bulk 1
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    Bristol Electronics 2SK1213 1,835
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    Molex FM7W2S-K121

    D-Sub Mixed Contact Connectors SOCKET 5 PIN 2 HOLE
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    TTI FM7W2S-K121 Each 3,274 2
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    • 100 $3.39
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    Interstate Connecting Components FM7W2S-K121 92
    • 1 $4.2399
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    • 100 $3.5668
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    2SK121 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK121 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK121 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK121 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK121 Unknown Scan PDF
    2SK121 Unknown FET Data Book Scan PDF
    2SK121 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK121 Sony Silicon N-Channel Junction FET Scan PDF
    2SK121 Sony Silicon N Channel Junction FET Scan PDF
    2SK1211 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK121-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1211 Unknown FET Data Book Scan PDF
    2SK1211-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1211-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1212 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK121-2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1212 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1212 Unknown Scan PDF
    2SK1212 Unknown FET Data Book Scan PDF
    2SK1212-01 Collmer Semiconductor MOSFET Selection Guide Scan PDF

    2SK121 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK1215

    Abstract: 2SK359
    Text: 2SK1215 Silicon N channel MOS FET VHF High Frequency Amplifier Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDSX* 20 V ——————————————————————–


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    2SK1215 2SK1215 2SK359. 2SK359 PDF

    M1B marking

    Abstract: No abstract text available
    Text: 2SK1214 Switching Diodes MA159A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R Unit 0.1 to 0.3 VR 80 V Repetitive peak reverse voltage VRRM 80 V


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    2SK1214 MA159A M1B marking PDF

    2SK1215

    Abstract: 2SK1215IGETL 2SK1215IGFTL PTSP0003ZA-A
    Text: 2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 Previous ADE-208-1176 Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1 2 *CMPAK is a trademark of Renesas Technology Corp. Rev.2.00 Aug 10, 2005 page 1 of 5


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    2SK1215 REJ03G0813-0200 ADE-208-1176) PTSP0003ZA-A 2SK1215 2SK1215IGETL 2SK1215IGFTL PTSP0003ZA-A PDF

    2SK1215

    Abstract: 2SK359 DSA003638
    Text: 2SK1215 Silicon N-Channel MOS FET ADE-208-1176 Z 1st. Edition Mar. 2001 Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage


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    2SK1215 ADE-208-1176 2SK1215 2SK359 DSA003638 PDF

    e304 fet

    Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
    Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092


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    BF256B BF256LB 2SK121 ESM4092 MFE2005 MPF4416 UC2149 2N4978 PN4304 e304 fet 2SK581 Siliconix E304 MPF4860 TP5950 InterFET bf256s PN4222 U199 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1214 Switching Diodes M A 1 4 2 WA Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 high-density mounting 0.3–0 Small S-Mini type package with two incorporated elements, enabling 2.0±0.2 1.3±0.1 0.65 0.65


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    2SK1214 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1214 Power F-MOS FETs 2SK1214 Silicon N-Channel Power F-MOS Unit : mm ● High-speed secondary breakdown ● Low-voltage 16.7±0.3 ● No switching : tf =110ns typ drive 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 ON-resistance RDS(on) : R DS(on)1= 0.06Ω(typ)


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    2SK1214 110ns PDF

    M2D Package

    Abstract: No abstract text available
    Text: 2SK1214 Switching Diodes MA121 Silicon epitaxial planer type Unit : mm • Features +0.2 ● Three-element incorporated in one package, enabling high-density 2.8 –0.3 +0.25 1.5 –0.05 mounting +0.1 +0.1 0.3 –0.05 2 4 3 +0.1 0.16–0.06 +0.2 5 0.8 2.9 –0.05


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    2SK1214 MA121 100mA M2D Package PDF

    transistor mark ige

    Abstract: 2SK1215 2SK359 DSA003761
    Text: 2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings Ta = 25°C Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage VGSS ±5 V Drain current


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    2SK1215 transistor mark ige 2SK1215 2SK359 DSA003761 PDF

    251C

    Abstract: 2SK1214 H150
    Text: P ow er F-MOS FET 2SK 1214 2SK1214 Silicon N-channel Power F-M O S FET Package Dimensions • Features • • • • Low ON resistan ce RDS on : RDs (on) l = 0 .0 6 il (typ.) High sw itching rate : tf= 110ns (typ.) No secondary breakdow n Low voltage drive is possible (VGs= 4 V ).


    OCR Scan
    2SK1214 110ns 251C 2SK1214 H150 PDF

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan
    2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390 PDF

    TT 2158

    Abstract: No abstract text available
    Text: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier


    OCR Scan
    2SK1212-01R STg30 TT 2158 PDF

    2SK121

    Abstract: Audio T R-10kn
    Text: SONY» 2SK121 Silicon N-Channel Junction F E T • L o w Noise. H igh Gm • P ream plifiers fo r A u d io . V id e o • S w itchings >«•- 1 i J W ' ' l & f t S A Z t l A b s o lu t* M a x im u m R atin gs T , = 2 5 "C C haracteristics | j îy m b o l


    OCR Scan
    2SK121 Vos-10V. Io-30mA 100MHz -10kn 2SK121 Audio T R-10kn PDF

    2SK359

    Abstract: 2sk1215
    Text: HITACHI 2SK1215-Silicon N channel MOS FET VHF High Frequency Amplifier Table 1 Absolute Maximum Ratings CMPAK Ta = 25°C Item Symbol Rating Unit Drain to source voltage VDSx* 20 V Gate to source voltage VGSs ±5 V Drain current lp 30 mA Gate current


    OCR Scan
    2SK1215-----Silicon 2SK1215 2SK359. 2SK359 PDF

    2SK962

    Abstract: T03P 2MI200F-025
    Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)


    OCR Scan
    2SK1082 2SK962 2SK1217 2SK1512 2SK1511 T03PF 2SK1008-01 2SK1010-01 2SK1012-01 2SK1014-01 T03P 2MI200F-025 PDF

    2SK1212-01

    Abstract: No abstract text available
    Text: 2SK1212-01 S IP M O S F U J I P O W E R M O S -F E T N-CH AN NEL SILICON POWER MOS-FET F-I • Features ■ O u tlin e Drawings SERIES • High c u rren t 5.5*“ • Low on-resistance • No secondary b reakd ow n • Low driving p o w er • A v a la n c h e -p ro o f


    OCR Scan
    2SK1212-01 10jus 100ps 100ms A2-159 PDF

    2SK1212-01

    Abstract: DDD3015 2Sk 111
    Text: 2SK1212-01 S IP M O S F U J I P O W E R M O S -F E T N-CH AN NEL SILICON POWER MOS-FET F-I • Features ■ O u tlin e Drawings SERIES • High c u rren t 5 .5 * “ • Low on-resistance • No secondary b reakd ow n • Low driving p o w er • A v a la n c h e -p ro o f


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    2SK1212-01 450VV> A2-159 DDD3015 2Sk 111 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1215 Silicon N-Channel MOS FET HITACHI Application VHF amplifier Outline CMPAK ‘2 1. Gate 2. Drain 3. Source 1067 2SK1215 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage V *' V DSX 20 V Gate to source voltage ^G S S


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    2SK1215 2SK1215 PDF

    2sk1217

    Abstract: 2SK1217-01R 1217-01R
    Text: 2SK1217-01R FUJI POWER MOS-FET N - C H A N N E L S IL IC O N P O W E R M O S - F F.T _ - T T ^ r - r * i r- F -ll SERIES lOutline Drawings • Features • High speed switching • l.ow on-resistance • No secondary breakdown • Low driving power


    OCR Scan
    2SK1217-01R 538B-7657 2sk1217 2SK1217-01R 1217-01R PDF

    2SK1212-01R

    Abstract: SS5080
    Text: 2SK1212-01R FUJI POWER MOS-FET F-I SERIES N-CHANNEL SILICON POWER MOS-FET lOutline Drawings • Features • High cu rre n t • Lo w o n-re sista n ce • No se condary b re a kd o w n • Low drivin g p o w e r • Avalanche-proof ■ Applications • D C -D C co n ve rte rs


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    2SK1212-01R izaTS30 SS5080 PDF

    2SK1214

    Abstract: 5N60 bt353 bt353s5 H3228
    Text: Power F-MOS FET 2SK1214 2SK1214 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R Ds on : RDs (on) l = 0 .0 6 f i (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 110ns (ty p .) • N o se c o n d a ry b re a k d o w n


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    2SK1214 110ns bT353S5 0G17140 2SK1214 5N60 bt353 H3228 PDF

    2SK1217

    Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
    Text: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan
    2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 MOSFET Modules 2SK1012-01 2SK1171 PDF

    2SK1213

    Abstract: transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSH 2SK1213 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)


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    DD300V 00A/j 2SK1213 transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600 PDF

    2SK1082

    Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan
    2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1090 2SK1276 PDF