2SK1455
Abstract: No abstract text available
Text: Ordering number:EN3458 N-Channel Silicon MOSFET 2SK1455 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2052C [2SK1455] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3
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EN3458
2SK1455
2052C
2SK1455]
SC-46
O-220AB
2SK1455
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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TN6Q04
Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15
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O-220MF
O-220FI
O-220FI5H
O-220ML
O-126
O-126LP
O-126ML
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2sk4100
2SJ585
2SK4100ls
2SK4101LS
INV250
2SK4096LS
2SJ406
2SK3745LS
2SJ584
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TN6Q04
Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use
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O-220
O-220ML
O-220FI
O-220FI5H
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2SJ585
TN6Q03
2sk4100
2SK4096LS
2SK4100ls
2SJ655
2SK3748
2SK4087LS datasheet
2SK4101LS
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2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
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2SK1358
O-247
2SK1359
2SK1362
2SK2563
2SK2568
2SK1411
2SK1535
2SK1410
2SK1538
2SK1358 datasheet
2sk2082
2SK2397-01MR
2SK2475
2SK2370
2sk2225
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Untitled
Abstract: No abstract text available
Text: • UH Series Lineup Absolute maximum ratings at Ta = 25°C Type No. ftdtage v t» l m Vcss V 2SK1455 2SK1456 «0 P* (A) m 0.2 Electrical characteristics at Ta = 25°C . . Bpsm Clss tVfsl % {«#} typ-ma* mtitom ax typ atVGS = i0V (pF) m m m 30
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2SK1455
2SK1456
2SK1458
O-220FI
O-220
2SK1459
2SK1462
2SK1463
2SK1464
2SK1465
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2SK1455
Abstract: No abstract text available
Text: Ordering num ber: EN3 4 5 8 2SK1455 No.3458 N-Channel MOS Silicon FET V ery High-Speed Sw itching Applications F eatu re s • Low ON-state resistance. •Very high-speed switching. • Converters. A bsolute M axim um R atings at Ta=25°C Drain to Source Voltage
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EN3458
2SK1455
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Untitled
Abstract: No abstract text available
Text: 2SK1455 2052B U H Ultrahigh Voltage S eries V DSs = 9 0 0 V N Channel Power MOSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A bso lu te M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1455
2052B
10/iS,
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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2SK1925
Abstract: No abstract text available
Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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2SK1737
2SK1738
T0220
2SK1921*
2SK2142*
2SJ254
0220M
2SK1925
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SK1461
Abstract: 2SK1435 2SK1436 2SK1437 2SK1438 2SK1439 2SK1440 2SK1441 2SK1442 2SK1443
Text: - 104 - f W % £ m m & m í 36 $ ft t I V* h' V fe Vg s * X » * (V) * (A) 3 * * P d /P c h (W) Ig s s (max) (A) Vg s (V) (rain) (max) V d s (A) (A) (V) (min) (V) (Ta=25°0) te 4$ (max) V d s (V) (V) g m (min) (S) ]¡D (A) Vd s (V) Id (A) 2SK1435 HS SW
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2SK1435
2SK1436
2SK1437
2SK1438
2SK1439
160nstyp
2SK1456
265nstyp
2SK1457
210nstyp
2SK1461
2SK1438
2SK1440
2SK1441
2SK1442
2SK1443
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K1412
Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP
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17G7ti
2SK1467
2SK14691
2SK1470
--2SK1471
2SK1472
2SK1473
2SK1474
2SK1475
1800m
K1412
K1413
K1464
K923A
2sk1412 to220ml
AK1052
AK924
2SJ193
2SK1460
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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2sK1413
Abstract: T0220FI Vdss 1500V
Text: SAftYO POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK1416
2SK1417
2SK1418
2SK1419
2SK1420
2SK1421
2SK1871
2SK1422
2SK1423
2SK1424
2sK1413
T0220FI
Vdss 1500V
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Untitled
Abstract: No abstract text available
Text: SA/im POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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20m/26m
12m/16m
8m/12m
2SK1424
2SK1425
2SK1426
2SK1422
2SK1423
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