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    2SK155 Search Results

    2SK155 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK155 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK155 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK155 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK155 Unknown FET Data Book Scan PDF
    2SK155 Panasonic Si N-channel junction. AF low-noise amplifier. Scan PDF
    2SK1550 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1550 Collmer Semiconductor MOSFET Selection Guide Scan PDF
    2SK1552-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1552-01L Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1552-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1552-01S Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1552-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1553-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1553-01 Collmer Semiconductor F-II, FAP, F-III, F-V Series Modules Scan PDF
    2SK1553-01M Collmer Semiconductor MOSFET Selection Guide Scan PDF
    2SK1553-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1553-01MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1553-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1554-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1554-01 Collmer Semiconductor MOSFET Selection Guide Scan PDF

    2SK155 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P012

    Abstract: 2SK1552-01L
    Text: 2SK1552-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High current Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee 0.9 ±0.3 Outline Drawings


    Original
    PDF 2SK1552-01L P012

    2SK1553-01MR

    Abstract: No abstract text available
    Text: 2SK1553-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage TO-220F15 Applications Switching regulators UPS DC-DC converters


    Original
    PDF 2SK1553-01MR O-220F15 SC-67 2SK1553-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK1552-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High current Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee 0.9 ±0.3 Outline Drawings


    Original
    PDF 2SK1552-01L drK1552-01L

    2sk1553

    Abstract: No abstract text available
    Text: 2SK1553-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage TO-220F15 Applications Switching regulators UPS DC-DC converters


    Original
    PDF 2SK1553-01MR O-220F15 SC-67 2sk1553

    2SK2696

    Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
    Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack


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    PDF O-220AB O-220F15 Feb-00 2SK2696 2SK951 2SK2397 2SK2527 2SK2528 2SK2100 2SK2696 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original
    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    A2232

    Abstract: A-2232
    Text: 2SK1552-01L,S F U JI P O W E R M O S-FET - F-II SERIES _ _ _ _ N-CHAN NEL SILICON POWER MOS-FET • Features ■ Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power


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    PDF 2SK1552-01L A2232 A-2232

    2SK1553-01

    Abstract: 2sk1553
    Text: 2SK1553-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -F - I S E R I E S • Features Outline Drawings • Hicjh speed switching • Low on-resistance • No secondary breakdown • Low driving power


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    PDF 2SK1553-01 Tc-25Â SC-67 fliil11Â 2sk1553

    2SK1553-01M

    Abstract: schematic symbols UPS
    Text: 2SK1553-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features ^ g £ p | £ g Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage


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    PDF 2SK1553-01M SC-67 A2-235 schematic symbols UPS

    Untitled

    Abstract: No abstract text available
    Text: 2SK1553-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■ Applications


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    PDF 2SK1553-01M S--650V

    1848T

    Abstract: No abstract text available
    Text: 2SK1553-01 MR FUJI POWER M OS-FET N- CHANNE L SI LI CON P O W E R MOS - F E T _ T Ä — k - F - I S E R I E S • Features Outline Drawings • Hit|h speed sw itching • L o w on-resistance • No second ary breakdow n


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    PDF 2SK1553-01 1848T

    2SK1553-01

    Abstract: T151 MOSFET 20 NE 50 Z 2SK1553
    Text: 2SK1553-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features Outline Drawings • Hitjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi |h voltage • Avialanche-proof ■ Applications


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    PDF 2SK1553-01 SC-67 L40T-< T151 MOSFET 20 NE 50 Z 2SK1553

    a2232

    Abstract: A-2232 TI AIH 2SK1552-01 155201
    Text: 2SK1552-01 L,S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II S E R IE S • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • \'r<ss= ±30V Guarantee • Avalanche-proof


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    PDF 2SK1552-01 a2232 A-2232 TI AIH 155201

    a2232

    Abstract: A-2232 2SK1552-01 2SK1552-01L
    Text: 2SK1552-01 L,S FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET SERIES ^ • Features ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GSS= ± 3 0 V Guarantee


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    PDF 2SK1552-01L a2232 A-2232 2SK1552-01

    2SK955

    Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
    Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A


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    PDF DDDlfl70 2SK1134 T03PF 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK955 2SK899 2SK2001 2SK1660 2SK725

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


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    PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


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    PDF 2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


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    PDF 001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


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    PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


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    PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


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    PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    2SK056

    Abstract: No abstract text available
    Text: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000


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    PDF 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK056

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01


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    PDF 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 2SK1007-01

    2sk1005

    Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
    Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn


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    PDF 001SS7 CT03P t-39-13 2MI50F-050 2MI50S-050 2MI100F-025 2MI100F-050 2MI200F-025 6MI15FS-050 6MI20FS-025 2sk1005 T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101