Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK170 TRANSISTOR Search Results

    2SK170 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SK170 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK170

    Abstract: 2SK1703 2SK1702 Toshiba 2SK170
    Text: 2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


    Original     		PDF 2SK170 2SK170 2SK1703 2SK1702 Toshiba 2SK170

    2SK170

    Abstract: Toshiba 2SK170 2sk1703
    Text: 2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. · High |Yfs|: |Yfs| = 22 mS typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


    Original     		PDF 2SK170 2SK170 Toshiba 2SK170 2sk1703

    2SK170

    Abstract: TOSHIBA 2SK170 transistor 2sk170 03 transistor toshiba audio TOSHIBA NOTE TRANSISTOR BL 100 2sk170 transistor
    Text: 2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


    Original     		PDF 2SK170 2SK170 TOSHIBA 2SK170 transistor 2sk170 03 transistor toshiba audio TOSHIBA NOTE TRANSISTOR BL 100 2sk170 transistor

    2sk170

    Abstract: No abstract text available
    Text: 2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


    Original     		PDF 2SK170 TC-92 SC-43 2sk170

    2sk170

    Abstract: Toshiba 2SK170
    Text: 2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


    Original     		PDF 2SK170 2sk170 Toshiba 2SK170

    2sk170 spice

    Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6

    Untitled

    Abstract: No abstract text available
    Text: 2SK170 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF 2SK170

    2SJ74

    Abstract: 2SK170
    Text: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


    Original     		PDF 2SJ74 2SK170 2SJ74 2SK170

    2SJ74

    Abstract: toshiba 2SJ74 Transistor 2sj74 Toshiba 2SJ
    Text: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


    Original     		PDF 2SJ74 2SK170 SC-43 2SJ74 toshiba 2SJ74 Transistor 2sj74 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


    Original     		PDF 2SJ74 2SK170

    2Sj74

    Abstract: 2SK170 toshiba 2SJ74 Toshiba 2SK170 2SJ74 TO92
    Text: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. · High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


    Original     		PDF 2SJ74 2SK170 SC-43 2Sj74 2SK170 toshiba 2SJ74 Toshiba 2SK170 2SJ74 TO92

    2SK170 to92

    Abstract: 2SJ74
    Text: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


    Original     		PDF 2SJ74 2SK170 SC-43 2SK170 to92 2SJ74

    ai320

    Abstract: Toshiba 2SK170
    Text: TOSHIBA 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR ? m t k • m. SILICON N CHANNEL JUNCTION TYPE 17n ■ m U nit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. • Recommended for first stages of EQ and M.C. Head Amplifiers. • High |Yfs| : IYfs| = 22ms Typ.


    OCR Scan     		PDF 2SK170 --40V Ta-25 ai320 Toshiba 2SK170

    TOSHIBA 2SK170

    Abstract: 2SK170 W-05A g5030
    Text: TOSHIBA 2SK170 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 70 Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS . 5.1 MAX. • • Recommended for first stages of EQ and M.C. Head Amplifiers. High |Yfs| : IYfsl = 22ms Typ.


    OCR Scan     		PDF 2SK170 95nV/VHz --30V) TOSHIBA 2SK170 2SK170 W-05A g5030

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 70 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. • • • • • Recommended for first stages of EQ and M.C. Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ.


    OCR Scan     		PDF 2SK170 95nV/VHz

    TOSHIBA 2SK170

    Abstract: 2SK170
    Text: TO SH IBA 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 70 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS . 5.1 M A X. • • • • • Recommended for firststages of EQ and M.C. Head Amplifiers. High |Yfs! : |Yfs! = 22 mS typ.


    OCR Scan     		PDF 2SK170 --40V TOSHIBA 2SK170 2SK170

    2SK170

    Abstract: No abstract text available
    Text: TO SH IB A 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 70 LOW NOISE AUDIO AMPLIFIER APPLICATIONS U nit in mm 5.1 MAX. • Recommended for first stages of EQ and M.C. Head Amplifiers. • High |Yfs| : |Yfg| = 22ms Typ. (VDS = 10V, VGS = 0,


    OCR Scan     		PDF 2SK170 --40V --30V) 2SK170

    2SC1815 2SA1015

    Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
    Text: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161


    OCR Scan     		PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1815

    toshiba 2SJ74

    Abstract: 2SJ74 2SK170
    Text: TO SH IB A 2SJ74 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ74 Unit in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS • Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. High |Yfs| : |Yfc| = 22mS Typ. (VDS = - 10V, VGg = 0, IDSS = -3m A )


    OCR Scan     		PDF 2SJ74 2SK170 SC-43 toshiba 2SJ74

    toshiba 2SJ74

    Abstract: TOSHIBA 2SK170 2SJ74 2SK170 2SK170 to92
    Text: TO SH IBA 2SJ74 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ74 Unit in mm LO W NOISE AUD IO A M PLIFIER APPLICATIONS • • • • • Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. High |Yfs| : |Yfs| = 22mS Typ. (VD S= -1 0 V , VGS = 0, IDS S = - 3 mA)


    OCR Scan     		PDF 2SJ74 95nV/VHz 2SK170 toshiba 2SJ74 TOSHIBA 2SK170 2SJ74 2SK170 2SK170 to92

    Toshiba 2SK170

    Abstract: 2SJ74
    Text: TOSHIBA 2SJ74 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON P CHANNEL JUNCTION TYPE <; i 7 d Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS .5.1 MAX. Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. TTicrVi rJ C>~ IV I * 1BI n ¿Ie; : |Yfe| = 22mS Typ. (VDS = - 10V, VGS = 0, IDSS = -3mA)


    OCR Scan     		PDF 2SJ74 95nV/VHz 2SK170 Toshiba 2SK170 2SJ74

    toshiba 2SJ74

    Abstract: 2SK170 to92 2SJ74 2SK170
    Text: TO SH IB A 2SJ74 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ74 Unit in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS • . 5.1 M AX. Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. High |Yfs| : |Yfc| = 22mS Typ. (VDS = - 10V, VGg = 0, IDSS = -3m A )


    OCR Scan     		PDF 2SJ74 2SK170 toshiba 2SJ74 2SK170 to92 2SJ74 2SK170

    2SK170

    Abstract: 2SJ74 Toshiba 2SK170 toshiba 2SJ74
    Text: TOSHIBA 2SJ74 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ74 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • • • Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. High |Yfs| : |Yfs| = 22mS Typ. (VDS= -1 0 V , VGS = 0, IDSS= -3m A )


    OCR Scan     		PDF 2SJ74 95nV/VHz 2SK170 2SK170 2SJ74 Toshiba 2SK170 toshiba 2SJ74

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ74 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ74 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. High |Yfc| : |Yfs| = 22mS Typ. (VDS= -1 0 V , VGS = 0, IDgg= -3m A )


    OCR Scan     		PDF 2SJ74 2SK170