Untitled
Abstract: No abstract text available
Text: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator
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2SK1862,
2SK1863
REJ03G0982-0200
ADE-208-1329)
PRSS0003AD-A
O-220FM)
2SK1862
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2SK1153
Abstract: 2SK1154 2SK1862 2SK1863
Text: 2SK1862, 2SK1863 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator 2 12 1 1. Gate 2. Drain
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2SK1862,
2SK1863
220FM
2SK1862
2SK1153
2SK1154
2SK1862
2SK1863
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Hitachi DSA002781
Abstract: No abstract text available
Text: 2SK1862, 2SK1863 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK1862, 2SK1863 Absolute Maximum Ratings Ta = 25°C
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2SK1862,
2SK1863
2SK1862
2SK1863
Hitachi DSA002781
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Hitachi DSA002748
Abstract: No abstract text available
Text: 2SK1862, 2SK1863 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220FM D
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2SK1862,
2SK1863
O-220FM
2SK1862
2SK1863
D-85622
Hitachi DSA002748
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2SK1860
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 0.12 –0.01 3 • Absolute Maximum Ratings Ta = 25°C (0.95)
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2SK1860
2SK1860
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET ADE-208-1330 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter
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2SK1869
ADE-208-1330
D-85622
Hitachi DSA00276
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 26ns ● No secondary breakdown ● Allowing to supply by the radial taping
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2SK1867
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Untitled
Abstract: No abstract text available
Text: 2SK1868 Power F-MOS FETs 2SK1868 Silicon N-Channel Power F-MOS • Features Unit : mm 5.0±0.1 ON-resistance RDS on : R DS(on)1= 0.135Ω ● High-speed switching : tf= 53ns secondary breakdown ● Low-voltage ● Radial taping possible ■ Applications ● Non-contact
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2SK1868
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2SK1862
Abstract: 2SK1862-E 2SK1863 2SK1863-E PRSS0003AD-A
Text: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator
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2SK1862,
2SK1863
REJ03G0982-0200
ADE-208-1329)
PRSS0003AD-A
O-220FM)
2SK1862
2SK1862
2SK1862-E
2SK1863
2SK1863-E
PRSS0003AD-A
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2SK1860
Abstract: 2.2k FET electret microphone CAPACITOR MICROPHONE
Text: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm • Features Ratings Unit VDSO 20 V Drain to Gate voltage VDGO 20 V Drain to Source current IDSO
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2SK1860
2SK1860
2.2k
FET electret microphone
CAPACITOR MICROPHONE
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2SK1400A
Abstract: 2SK1869 Hitachi DSA00347
Text: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline
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2SK1869
2SK1400A
Hitachi DSA00347
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Untitled
Abstract: No abstract text available
Text: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator
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2SK1862,
2SK1863
REJ03G0982-0200
ADE-208-1329)
PRSS0003AD-A
O-220FM)
2SK1862
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline
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2SK1869
Hitachi DSA00279
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Untitled
Abstract: No abstract text available
Text: 2SK1867 Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS Unit : mm • Features 10.0±0.2 energy capability guaranteed : EAS >15mJ secondary breakdown ● Radial taping possible 18.0±0.5 Solder Dip ● No switching: tf = 26ns 90˚ 2.5±0.2 ● VGSS= ±30V guaranteed
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2SK1867
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mj 13002
Abstract: 2SK1867 2sk18
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 26ns ● No secondary breakdown ● Allowing to supply by the radial taping
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2SK1867
mj 13002
2SK1867
2sk18
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Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS 5 .0 ± 0.1 • Features • • • • • Unit : mm Avalanche energy capability guaranteed : EAS >15mJ VGss= ±30V guaranteed High-speed switching: tf = 26ns No secondary breakdown Radial taping possible
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OCR Scan
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PDF
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2SK1867
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2SK1395
Abstract: 2sk2006 2SK1539 2SK1685
Text: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695
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2SK1861
2SK1931
2SK1194
2SK1195
2SK1672
2SK1533
2SK2005
2SK2006
2SK1391
2SK1392
2SK1395
2SK1539
2SK1685
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2SK1865
Abstract: ld12a diode 9D Bp co2cc 2sk18
Text: TOSHIBA Discrete Semiconductors 2SK1865 Field Effect Transistor Industrial A p p lica tio n s Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F ea tu res • Low Drain-Source ON Resistance - Rds (ON) = 0-55Q (Typ.)
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OCR Scan
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PDF
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2SK1865
300nA
Tc-25
00Elb7b
ld12a
diode 9D Bp
co2cc
2sk18
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10
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2SK1861
F05B23VR
2SK1195
STO-220
STO-220
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2SK2574
Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative
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OCR Scan
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2SK1868
-220F
2SK1255
O-220E
2SK2578
2SK2579
2SK1967
2SK2659
2SK1033
2SK2574
2SK2574
2SK1259
2SK2377
2SK2659
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Untitled
Abstract: No abstract text available
Text: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter
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OCR Scan
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PDF
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2SK1869
2SK1869Ã
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Untitled
Abstract: No abstract text available
Text: S M D l S f i v '; - * * /\°7~M 0S F E T Surface Mownting Technology Device o u t l in e d im e n s io n s 2SK1861 Case E-pack [F4E15LJ 150V 4 A [Unit ! mm] 6.6 ± 0.2 52 ±02 •4VgE»3tJffi„ • y - l 'f f iB Z D r t S o ÄS T G ate (D (4) Drain (3) Source
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OCR Scan
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2SK1861
F4E15LJ
F4E15L)
GG02ML
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smd diode UM 2a
Abstract: 2SK1861 mr02 12-24VA
Text: S M D M v 'J-X /\°7 ~ M 0 S F E T Surface Mounting Technology Device M flN -ä E I 2SK1861 [ F 1 e E 4 5 1 L 5 V OUTLINE DIMENSIONS Case : E-pack [Unit ! mm] ] A 4 6.6 ±02 aap £ « g ^ !ft] • 4 V . ! l ! il ii) S o EIAJ 2.55 o.r> to. i h No a -y l-ie -^ iîiJ )
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OCR Scan
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2SK1861
F4E15L]
12-24VA
smd diode UM 2a
2SK1861
mr02
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Untitled
Abstract: No abstract text available
Text: 2SK1862,2SK1863 Silicon N-Channel MOS FET HITACHI Application H igh speed p o w e r sw itching Features • L ow o n -rcsistance • H igh speed sw itc h in g • L o w drive c u rre n t • N o secondary breakdow n • S uitable for S w itc h in g re g u la to r
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PDF
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2SK1862
2SK1863
2SK1863
2SK1862,
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