Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 26ns ● No secondary breakdown ● Allowing to supply by the radial taping
|
Original
|
PDF
|
2SK1867
|
Untitled
Abstract: No abstract text available
Text: 2SK1867 Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS Unit : mm • Features 10.0±0.2 energy capability guaranteed : EAS >15mJ secondary breakdown ● Radial taping possible 18.0±0.5 Solder Dip ● No switching: tf = 26ns 90˚ 2.5±0.2 ● VGSS= ±30V guaranteed
|
Original
|
PDF
|
2SK1867
|
mj 13002
Abstract: 2SK1867 2sk18
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 26ns ● No secondary breakdown ● Allowing to supply by the radial taping
|
Original
|
PDF
|
2SK1867
mj 13002
2SK1867
2sk18
|
2SK1867
Abstract: power Junction FET
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 26ns ● No secondary breakdown ● Allowing to supply by the radial taping
|
Original
|
PDF
|
2SK1867
2SK1867
power Junction FET
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
|
Original
|
PDF
|
MN1001
MN1020215
MN1020407
MN1020415
MN1020715
MN102LF53G
MN1040
MN110
MN1101
MN115
ON3105
2sd2603
mn4117405
2sc901b
mn6520
MN1280
mn1225
MN6147C
2SC5573
GN2013
|
Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS 5 .0 ± 0.1 • Features • • • • • Unit : mm Avalanche energy capability guaranteed : EAS >15mJ VGss= ±30V guaranteed High-speed switching: tf = 26ns No secondary breakdown Radial taping possible
|
OCR Scan
|
PDF
|
2SK1867
|
2sk2324
Abstract: 2SK2124 2SK2127 2sk2323
Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )
|
OCR Scan
|
PDF
|
O-22C
O-220E
2SK1605
2SK1606
2SK2123
2SK2124
2SK1607
2SK2032
2SK2571
2SK2509
2sk2324
2SK2127
2sk2323
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
PDF
|
MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
|
BI 370
Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
Text: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D
|
OCR Scan
|
PDF
|
2SK1852
2SK1853
2SK1859
2SK1862
2SK1863
1116B
2SK1911
130ns,
370nstyp
2SK1918
BI 370
2SK1878
LM9005
2501L
BA 5810
|
Untitled
Abstract: No abstract text available
Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8
|
OCR Scan
|
PDF
|
O-220E
2SK1406
A2SK2572
2SK1605
2SK1606
2SK2123
2SK2124
2SK1607
2SK2032
2SK2571
|