2SK2021
Abstract: 2SK2021-01
Text: 2SK2021-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators
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Original
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2SK2021-01
O-220AB
SC-46
2SK2021
2SK2021-01
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2021-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators
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Original
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2SK2021-01
O-220AB
O-220AB
SC-46
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2021-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 1,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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Original
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2SK2021-01
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PDF
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2SK2021-01
Abstract: No abstract text available
Text: 2SK2021-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 1,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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Original
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2SK2021-01
2SK2021-01
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PDF
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MTP6N60E equivalent
Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Text: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S
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Original
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IRF820
IRF820A
IRF820AS
IRF820S
IRF830A
IRF830AS
IRF830S
IRF840
IRF840A
IRF840AS
MTP6N60E equivalent
buz91a equivalent
buz90 equivalent
IRFBE30 equivalent
IRFB11N50A equivalent
irfp460a equivalent
BUZ74 equivalent
2SK2645 "cross reference"
equivalent buz305
EQUIVALENT irfp22n50a
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PDF
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TO220 Semiconductor Packaging
Abstract: MOSFET HIGH VOLTAGE mosfet 4800 2SK2642-01MR 2SK208 4800 mosfet
Text: C o l l m e r Semiconductor MOS-FET, High Voltage Diodes N-Channel Silicon Power MOS-FET c F-I Series = Low RDS ON c F-II Series = VGS ±30 V, Reduced Turn Off Time c FAP-II Series = High Avalanche Ruggedness c F-III Series = Logic Level, High g fs c FAP-III = Logic Level, High Avalanche Ruggedness
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Original
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2SJ314-01L
2SJ314-01S
ESJC30-08
CS57-04A
CS54-08A
CS52-12A
CS52-14A
CS56-24
TO220 Semiconductor Packaging
MOSFET HIGH VOLTAGE
mosfet 4800
2SK2642-01MR
2SK208
4800 mosfet
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PDF
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LTUG
Abstract: No abstract text available
Text: 2SK2021-01 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features Outline Drawings • H gh speed switching • Low on-resistance • No secondary breakdown • Low. driving power • H gh voltage • V, s= +30V Guarantee • Avalanche-proof
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OCR Scan
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2SK2021-01
5388-76B1
LTUG
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PDF
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1SS100
Abstract: No abstract text available
Text: FU JI ô'U.SElTÜâUlÊ 2SK2021-01 N -c h a n n e l M O S -F E T F A P -M A S e r ie s 500V 5A 60W > Outline Drawing > Features - 1 ,6 Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof
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OCR Scan
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2SK2021-01
1SS100
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PDF
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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PDF
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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OCR Scan
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01
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OCR Scan
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2SK2518-01MR
2SK2250-01L
2SK22S1-01
2SK2292-01L
2SK2099-01
2SK2253-01MR
2SK22S2-01L
2SK22S5-01MR
2SK2254-01L
2SK2256-01
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00
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OCR Scan
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O-220F15
O-220
O-22QF15
T6-226F15-------------
2SK2082-01
2SK2771-01R
2SK2004-01
2SK1986-01
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PDF
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2SK1937
Abstract: No abstract text available
Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass
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OCR Scan
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2SK2518-01MR
2SK2918-01MR
2SK2251-01
T0-220F15
O-220AB
O-220F15
2SK1937
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PDF
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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OCR Scan
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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PDF
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TO-220F15
Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S
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OCR Scan
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2SK2518-01MR
O-220F15
2SK2250-01L
2SK22S1-01
O-220
2SK2292-01L
2SK2099-01
2SK2253-01MR
T0220F15
2SK2252-01L
TO-220F15
2SK1940
2SK2771
K1941
SK2002-01MR
2SK2082
2SK2082-01
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PDF
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2SK2021
Abstract: 2SK2021-01 30S3
Text: 2 S K 2 2 1 FUJI POWER MOS-FET - 0 1 N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features Outline Drawings • H gh speed switching • Le w on-resistance • No secondary breakdown • Le w-driving power • High voltage • V, s= ±30V Guarantee • A' 'alanche-proof
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OCR Scan
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2SK2021-01
SC-46
2SK2021
2SK2021-01
30S3
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PDF
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