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    2SK2025 Search Results

    2SK2025 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2025-01 Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK2025-01 Fuji Electric N-channel MOS-FET Original PDF
    2SK2025-01 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK2025 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2025-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2025-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original     		2SK2025-01 O-220AB SC-46 PDF

    2SK2025-01

    Abstract: No abstract text available
    Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2025-01 2SK2025-01 PDF

    2SK2025-01

    Abstract: No abstract text available
    Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2025-01 2SK2025-01 PDF

    2SK2025-01

    Abstract: No abstract text available
    Text: 2SK2025-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original     		2SK2025-01 O-220AB SC-46 2SK2025-01 PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    2SK2774

    Abstract: 2SK1941-01R 2SK2774-01MR 2SK1936-01
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type ＊2 VGS th Typ. Volts パッケージ Package


    Original     		2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2SK1941-01R 2SK1936-01 PDF

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original     		2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018 PDF

    2SK2774

    Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01


    Original     		2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR PDF

    MTP6N60E equivalent

    Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
    Text: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S


    Original     		IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS MTP6N60E equivalent buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a PDF

    2SK1411

    Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
    Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0


    Original     		2SK1358 O-247 2SK1359 2SK1362 2SK2563 2SK2568 2SK1411 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225 PDF

    2SK2645

    Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
    Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)


    Original     		Feb-00 O-220AB 2SK1007 2SK2523 O-220F15 2SK2469 2SK1006 2SK2470 2SK2524 2SK2471 2SK2645 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879 PDF

    2sk2025

    Abstract: No abstract text available
    Text: FU JI 2SK2025-01 iM iL æ u 'ü c â J i^ FAP-IIA Series N-channel MOS-FET 600V 2,4£2 4A 60W > Outline Drawing > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof


    OCR Scan     		2SK2025-01 2sk2025 PDF

    a2358

    Abstract: diode U1J Rgs-100 A2-357 2SK2025-01 H150 A2356 a2357
    Text: 2SK2025-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings I -eatures 1h igh speed switching 1Low on-resistance secondary breakdown »L dw driving power >h igh voltage »Vgs - ± 30 V Guarantee Avalanche-proof I Applications


    OCR Scan     		O-220AB SC-46 777fc a2358 diode U1J Rgs-100 A2-357 2SK2025-01 H150 A2356 a2357 PDF

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182 PDF

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 PDF

    2SK1937

    Abstract: No abstract text available
    Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass


    OCR Scan     		2SK2518-01MR 2SK2918-01MR 2SK2251-01 T0-220F15 O-220AB O-220F15 2SK1937 PDF

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R PDF

    2sk2255-01mr

    Abstract: 2SK2082 2SK194 2SK1941-01R
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S


    OCR Scan     		2SK2518-01MR 2SK2250-01L 2SK2251-01 2SK2292-01L 2SK2099-01 2SK2253-01 2SK2252-01L 2SK2255-01 2SK2254-01 2SK2256-01 2sk2255-01mr 2SK2082 2SK194 2SK1941-01R PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R PDF

    TO-220F15

    Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
    Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S


    OCR Scan     		2SK2518-01MR O-220F15 2SK2250-01L 2SK22S1-01 O-220 2SK2292-01L 2SK2099-01 2SK2253-01MR T0220F15 2SK2252-01L TO-220F15 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 PDF