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    2SK2331 Search Results

    2SK2331 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2331 Toshiba Field Effect Transistor GaAs N Channel Single Gate Modulation Dope Type Scan PDF
    2SK2331 Toshiba N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF

    2SK2331 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L PDF

    LTA 703 S

    Abstract: amplifier shf
    Text: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SK2331 12GHz) LTA 703 S amplifier shf PDF

    2SK2331

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 U nit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain 2.16±0.2 : Ga = lld B (f=12GHz)


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    2SK2331 12GHz) Z-167, 12GHz 2SK2331 PDF

    22m1

    Abstract: 2SK2331
    Text: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain 2.16±0.2 : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)


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    2SK2331 12GHz) Z-167, 12GHz 22m1 2SK2331 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2331 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE i < ; \c i * MT • m. MT 31 M T ■ SHF BAND LOW NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : N F = 0.45dB f=12G H z • High Gain U nit in mm : G a = ll d B (f=12G H z)


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    2SK2331 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.45dB f=12GHz High Gain : Ga = lldB (f=12GHz) M A X IM U M RATINGS (Ta = 25°C)


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    2SK2331 12GHz) 12GHz PDF

    SV153A

    Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
    Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670


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    2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172 1SV252 1SV102 SV149 2V02H SV153A Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66 PDF

    k192a

    Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
    Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188


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    1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995 PDF