2SK2660
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 Symbol Ratings Unit Drain to Source breakdown voltage VDSS
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2SK2660
2SK2660
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Untitled
Abstract: No abstract text available
Text: 2SK758 Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed switching 6.5±0.1 ● High drain-source voltage (VDSS) 4.35±0.1 1.8±0.1 2.5±0.1 5.3±0.1 3.0±0.1 0.85±0.1 Parameter Symbol Rating Unit Drain-Source breakdown voltage
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2SK758
2SK2660
SC-63
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 M Di ain sc te on na tin nc ue e/ d 2.3±0.1 0.5±0.1 Drain to Source breakdown voltage Gate to Source voltage
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2SK2660
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2SK2660
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 200 V Gate to Source voltage
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2SK2660
2SK2660
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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2SK2660
Abstract: No abstract text available
Text: Panasonic P o w e r F - M O S FETs 2SK2660 Tentative Silicon N -C hannel Power F-M OS U n it : m m • Features • High-speed switching • High drain-source voltage (V d ss ) ■ Applications • High-speed switching Absolute Maximum Ratings (Tc = 25°C)
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2SK2660
SC-63
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Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • High-speed switching • High drain-source voltage (V d s s ) ■ Applications • High-speed switching Absolute Maximum Ratings Parameter Drain-Source breakdown voltage
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2SK2660
SC-63
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Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : rmn • Features • High-speed switching • High drain-source voltage (V qss) ■Applications • High-speed switching Absolute Maximum Ratings (Tc = 25°C) Parameter Drain-Source breakdown voltage
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2SK2660
SC-63
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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