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    2SK2796S Search Results

    2SK2796S Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2796STL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK2796STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SK2796S Price and Stock

    Renesas Electronics Corporation 2SK2796STL-E

    Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) DPAK(S) T/R
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    Verical 2SK2796STL-E 2,481 33
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    • 1000 $0.6
    • 10000 $0.56
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    Chip1Stop 2SK2796STL-E Cut Tape 2,497
    • 1 $1.56
    • 10 $0.766
    • 100 $0.567
    • 1000 $0.47
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    Renesas Electronics Corporation 2SK2796STLEZZZZ

    HIGH SPEED POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK2796STLEZZZZ 3,000
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    2SK2796S Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2796(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2796S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796S Kexin N-Channel MOSFET Original PDF
    2SK2796(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796S Renesas Technology SMD, High Speed Power Amplifier, 60V 5A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK2796S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF

    2SK2796S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2796L

    Abstract: 2SK2796S Hitachi DSA00117
    Text: 2SK2796L, 2SK2796S Silicon N Channel MOS FET High Speed Power Switching Target Specification 1st. Edition October 1996 Features • • • Low on-resistance RDS on = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK 4 4 D 2 1 2 G 1 3


    Original     		PDF 2SK2796L, 2SK2796S 2SK2796L 2SK2796S Hitachi DSA00117

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SK2796S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.12 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		PDF 2SK2796S O-252

    2SK2796S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2796S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.12 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		PDF 2SK2796S O-252 2SK2796S

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2796

    Abstract: 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2796STL

    Abstract: 2SK2796 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1034-0500 (Previous: ADE-208-534C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004ZD-A


    Original     		PDF 2SK2796 REJ03G1034-0500 ADE-208-534C) PRSS0004ZD-A PRSS0004ZD-C 2SK2796STL 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009