2SK292 Search Results

2SK292 Result Highlights (5)

Part	Manufacturer	Description
2SK2925STR-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 10A 80Mohm DPAK(S)/To-252
2SK2928-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 15A 52Mohm To-220Ab
2SK2926L-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 15A 55Mohm DPAK(L)-(2)/To-251
2SK2927-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 10A 75Mohm To-220Ab
2SK2925L-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 10A 80Mohm DPAK(L)-(2)/To-251

2SK292 Price and Stock

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Renesas Electronics Corporation 2SK2925L06-E 2SK2925L06-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2925L06-E		73,927		347	1 - 10 - 100 - 1000 $0.9798 10000 $0.9798	Buy Now
Rochester Electronics	2SK2925L06-E		73,927		1	1 $0.9221 10 $0.9221 100 $0.8668 1000 $0.7838 10000 $0.7838	Buy Now
Renesas Electronics Corporation 2SK2927-E Trans MOSFET N-CH Si 60V 10A 3-Pin(3+Tab) TO-220AB Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2927-E		36		9	1 - 10 $3.675 100 $1.8 1000 $1.8 10000 $1.8	Buy Now
Chip1Stop	2SK2927-E	Tube	36			1 $2.92 10 $1.43 100 $1.43 1000 $1.43 10000 $1.43	Buy Now
Toshiba America Electronic Components 2SK2920 PART NUMBER ONLY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK2920		1,910			1 $0.6 10 $0.6 100 $0.6 1000 $0.25 10000 $0.25	Buy Now
Renesas Electronics Corporation 2SK2926STL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK2926STL		626			1 $2 10 $2 100 $1 1000 $0.8 10000 $0.8	Buy Now
Renesas Electronics Corporation 2SK2926STL-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK2926STL-E		108			1 $1.56 10 $1.56 100 $0.78 1000 $0.78 10000 $0.78	Buy Now

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2SK292 Datasheets (58)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK292	Unknown	FET Data Book	Scan	PDF
2SK2920	Toshiba	FETs - Nch 150V	Original	PDF
2SK2920	Toshiba		Original	PDF
2SK2920	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SK2920	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK2920	Toshiba	Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)	Scan	PDF
2SK2920	Toshiba	Silicon N-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter, motor drive applications	Scan	PDF
2SK2922	Hitachi Semiconductor	Silicon N Channel MOS FET UHF Power Amplifier	Original	PDF
2SK2922	Renesas Technology	Silicon N Channel MOS FET UHF Power Amplifier	Original	PDF
2SK2923	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK2924	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK2925	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2925	Hitachi Semiconductor	Power Mosfet 5th Generation	Original	PDF
2SK2925	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF

2SK2925(L)	Hitachi Semiconductor	Power switching MOSFET	Original	PDF
2SK2925L	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2925L	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2925(L)	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2925L	Renesas Technology	High Speed Power Amplifier, 60V 10A 20W, MOS-FET N-Channel enhanced	Original	PDF
2SK2925L	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF

2SK292 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
8a smd Abstract: 2SK2926S Text: IC MOSFET SMD Type N-Channel Silicon MOSFET 2SK2926S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS =0.042 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1	Original	PDF	2SK2926S O-252 8a smd 2SK2926S
2SK2928 Abstract: 15A60 Hitachi DSA00108 Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551B Z 3rd. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange	Original	PDF	2SK2928 ADE-208-551B 220AB 2SK2928 15A60 Hitachi DSA00108
Hitachi DSA002749 Abstract: No abstract text available Text: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline	Original	PDF	2SK2922 ADE-208-675 31dBm, Hitachi DSA002749
Hitachi DSA002780 Abstract: No abstract text available Text: 2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2929 Absolute Maximum Ratings Ta = 25°C	Original	PDF	2SK2929 ADE-208-552 Hitachi DSA002780
Hitachi DSA002758 Abstract: 2SK2928 Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2928 Absolute Maximum Ratings Ta = 25°C	Original	PDF	2SK2928 ADE-208-551 Hitachi DSA002758 2SK2928
Hitachi DSA002758 Abstract: No abstract text available Text: 2SK2925 L , 2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline	Original	PDF	2SK2925 ADE-208-549 Hitachi DSA002758
Hitachi DSA002780 Abstract: No abstract text available Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2928 Absolute Maximum Ratings Ta = 25°C	Original	PDF	2SK2928 ADE-208-551 Hitachi DSA002780
K2920 Abstract: 2SK2920 Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : \|Yfs\| = 4.5 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.56 Ω (typ.)	Original	PDF	2SK2920 K2920 2SK2920
k2920 Abstract: No abstract text available Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance	Original	PDF	2SK2920 k2920
RENESAS 2SK2927-E TO-220AB Abstract: 2SK2927 2SK2927-E PRSS0004AC-A Text: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching REJ03G1041-0600 Previous: ADE-208-550D Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	Original	PDF	2SK2927 REJ03G1041-0600 ADE-208-550D) PRSS0004AC-A O-220AB) RENESAS 2SK2927-E TO-220AB 2SK2927 2SK2927-E PRSS0004AC-A
550D Abstract: 2SK2927 Hitachi DSA00238 Text: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching ADE-208-550D Z 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1	Original	PDF	2SK2927 ADE-208-550D 220AB 550D 2SK2927 Hitachi DSA00238
k2920 Abstract: 2SK2920 Text: 2SK2920 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2920 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用単位: mm : RDS (ON) = 0.56Ω (標準) z オン抵抗が低い。	Original	PDF	2SK2920 10VID SC-64 K2920 2002/95/EC) k2920 2SK2920
K2920 Abstract: 2SK2920 Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance	Original	PDF	2SK2920 K2920 2SK2920
mosfet vgs 5v 5a Abstract: 2SK2925S 5V GATE TO SOURCE VOLTAGE MOSFET Text: IC MOSFET SMD Type N-Channel Silicon MOSFET 2SK2925S Features Low on-resistance TO-252 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 High speed switching +0.15 1.50-0.15 RDS =0.060 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max	Original	PDF	2SK2925S O-252 mosfet vgs 5v 5a 2SK2925S 5V GATE TO SOURCE VOLTAGE MOSFET

Hitachi DSA00276 Abstract: No abstract text available Text: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 (Z) 1st. Edition Jul. 1997 Features • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 4 4 D 1 2 3 G S	Original	PDF	2SK2926 ADE-208-535 D-85622 Hitachi DSA00276
K2920 Abstract: K292 2SK2920 Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance	Original	PDF	2SK2920 K2920 K292 2SK2920
2SK2928 Abstract: 2SK2928-E PRSS0004AC-A Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching REJ03G1042-0400 Previous: ADE-208-551B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A	Original	PDF	2SK2928 REJ03G1042-0400 ADE-208-551B) PRSS0004AC-A O-220AB) 2SK2928 2SK2928-E PRSS0004AC-A
MMA6 Abstract: No abstract text available Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm a 6 .8 M A X . APPLICATIONS	OCR Scan	PDF	2SK2920 MMA6
2SK2920 Abstract: No abstract text available Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4 V Gate Drive	OCR Scan	PDF	2SK2920 2SK2920
Untitled Abstract: No abstract text available Text: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-550 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.055 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 1 190	OCR Scan	PDF	2SK2927 ADE-208-550
Untitled Abstract: No abstract text available Text: 2SK2925 L , 2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-549 Target Specification 1st. Edition Features • L ow on-resistance R ds = 0 .0 6 0 £2 typ. • H igh speed sw itch in g • 4 V gate drive d e v ic e can be driven from 5V source	OCR Scan	PDF	2SK2925 ADE-208-549
Untitled Abstract: No abstract text available Text: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier HITACHI ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31 dBm, r\|D = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting	OCR Scan	PDF	2SK2922 ADE-208-675 40815HITEC
Untitled Abstract: No abstract text available Text: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features L ow on-resistance R ds(o„, = 0-042 i i typ. 4V gate drive devices. High speed switching Outline DPAK-2 1. 2. 3. 4. 1182 Gate Drain Source Drain ADE-208-535 1st. Edition	OCR Scan	PDF	2SK2926 ADE-208-535
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : Rjjs (ON) = 0.56 fl (Typ.)	OCR Scan	PDF	2SK2920

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2SK292 Search Results

2SK292 Result Highlights (5)

2SK292 Price and Stock

Renesas Electronics Corporation 2SK2925L06-E

Renesas Electronics Corporation 2SK2927-E

Toshiba America Electronic Components 2SK2920

Renesas Electronics Corporation 2SK2926STL

Renesas Electronics Corporation 2SK2926STL-E

2SK292 Datasheets (58)

2SK292 Datasheets Context Search

8a smd

2SK2928

Hitachi DSA002749

Hitachi DSA002780

Hitachi DSA002758

Hitachi DSA002758

Hitachi DSA002780

K2920

k2920

RENESAS 2SK2927-E TO-220AB

550D

k2920

K2920

mosfet vgs 5v 5a

Hitachi DSA00276

K2920

2SK2928

MMA6

2SK2920

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