2SK307 Search Results

2SK307 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK3070L-E		Renesas Electronics Corporation	Nch Single Power Mosfet 40V 75A 5.8Mohm LDPAK(L)/To-262
2SK3070STR-E		Renesas Electronics Corporation	Nch Single Power Mosfet 40V 75A 5.8Mohm LDPAK(S)-(1)/To-263

2SK307 Price and Stock

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Rochester Electronics LLC 2SK3072-TB-E NCH 4V DRIVE SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3072-TB-E	Bulk			1,268	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
Toshiba America Electronic Components 2SK3078A(TE12L Transistor RF FET N-CH 10V 0.5A 470MHz 3-Pin SC-62 T/R - Tape and Reel (Alt: 2SK3078A(TE12L,F))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK3078A(TE12L	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	2SK3078A(TE12L		398,000			1 - 10 - 100 - 1000 $0.149 10000 $0.121	Buy Now
Toshiba America Electronic Components 2SK3074(TE12L.F) Transistor RF FET N-CH 30V 1A 520MHz 3-Pin PW-Mini - Tape and Reel (Alt: 2SK3074(TE12L,F))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK3074(TE12L.F)	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	2SK3074(TE12L.F)			24 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK3079ATE12LQ RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	2SK3079ATE12LQ					1 - 10 - 100 - 1000 $1.04 10000 $1.04	Get Quote
Aptina Imaging 2SK3072-TB-E Trans MOSFET N-CH Si 450V 0.03A 3-Pin CP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3072-TB-E		2,219		1,552	1 - 10 - 100 - 1000 - 10000 $0.2418	Buy Now

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2SK307 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK3070	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK3070(L)	Hitachi Semiconductor	Power switching MOSFET	Original	PDF
2SK3070L	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK3070(L)	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK3070L	Renesas Technology	MOSFET, Switching; VDSS (V): 40; ID (A): 75; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.0045; RDS (ON) typ. (ohm) @4V[4.5V]: 0.0065; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6800; toff ( us) typ: 0.55; Package: LDPAK (L)	Original	PDF
2SK3070L	Renesas Technology	High Speed Power Amplifier, 40V 75A 100W, MOS-FET N-Channel enhanced	Original	PDF
2SK3070(S)	Hitachi Semiconductor	Power switching MOSFET	Original	PDF
2SK3070S	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK3070(S)	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK3070S	Renesas Technology	MOSFET, Switching; VDSS (V): 40; ID (A): 75; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.0045; RDS (ON) typ. (ohm) @4V[4.5V]: 0.0065; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6800; toff ( us) typ: 0.55; Package: LDPAK (S)- (1)	Original	PDF
2SK3070S	Renesas Technology	SMD, High Speed Power Amplifier, 40V 75A 100W, MOS-FET N-Channel enhanced	Original	PDF
2SK3070STL-E	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK3072	Sanyo Semiconductor	N-Channel Silicon MOSFET	Original	PDF
2SK3072	Sanyo Semiconductor	CP Type Transistors	Scan	PDF

2SK3074	Toshiba	Silicon N-channel MOS type field effect transistor for RF power MOSFET, for UHF and VHF band power amplifier	Original	PDF
2SK3074	Toshiba	2SK3074 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SC-62, 2-5K1D, 3 PIN, FET RF Power	Original	PDF
2SK3074	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Scan	PDF
2SK3074TE12LF	Toshiba	RF FETs, Discrete Semiconductor Products, MOSF RF N CH 30V 1A PW-MINI	Original	PDF
2SK3074(TE12L,F)	Toshiba	2SK3074 - Trans MOSFET N-CH 30V 1A 4-Pin(3+Tab) PW-Mini T/R	Original	PDF
2SK3075	Toshiba	Silicon N-channel MOS type field effect transistor for RF power MOSFET, for UHF and VHF band power amplifier	Original	PDF

2SK307 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	PDF	2SK3074 630mW
Untitled Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	PDF	2SK3075
2SK3074 Abstract: all mosfet vhf power amplifier transistor marking zg Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C	Original	PDF	2SK3074 630mW SC-62 000707EAA1 520MHz, 2SK3074 all mosfet vhf power amplifier transistor marking zg
Untitled Abstract: No abstract text available Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3079A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.8 8 V 1. Vgs = 0.5V ∼ 1.8V 0.05V	Original	PDF	2SK3079A 150mA, 250mA, 350mA, 450mA, 550mA, 650mA
Hitachi DSA00276 Abstract: No abstract text available Text: 2SK3076 L ,2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jul. 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 D	Original	PDF	2SK3076 ADE-208-656 D-85622 Hitachi DSA00276
2SK3079 Abstract: No abstract text available Text: 2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power Gain : PO = 35.5 dBmW (Min.) : GP = 9.5 dB (Min.) Drain Efficiency : ηD = 58% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	Original	PDF	2SK3079 000707EAA1 2SK3079
2sk3078 Abstract: No abstract text available Text: 2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 27.0 dBmW (Min.) Gain : GP = 12.5 dB (Min.) Drain Efficiency : ηD = 46% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	Original	PDF	2SK3078 SC-62 000707EAA1 2sk3078
2SK3077 Abstract: No abstract text available Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 15.0 dBmW (Min.) Gain : GP = 15.0 dB (Min.) Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	Original	PDF	2SK3077 000707EAA1 2SK3077
2SK3077 Abstract: No abstract text available Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.	Original	PDF	2SK3077 2SK3077
2SK3075 Abstract: 2SK3075 MOSFET TRANSISTOR Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	PDF	2SK3075 2SK3075 2SK3075 MOSFET TRANSISTOR
Hitachi DSA00280 Abstract: No abstract text available Text: 2SK3070 L ,2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4.5mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK	Original	PDF	2SK3070 ADE-208-684G D-85622 Hitachi DSA00280
Untitled Abstract: No abstract text available Text: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	PDF	2SK3078A
Untitled Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC	Original	PDF	2SK3075
Untitled Abstract: No abstract text available Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C	Original	PDF	2SK3074 630mW SC-62

ta-1670 Abstract: 2SK3072 TA1670 Text: 2SK3072 Ordering number : ENN7224A N-Channel Silicon MOSFET 2SK3072 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. Low-voltage drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions	Original	PDF	2SK3072 ENN7224A ta-1670 2SK3072 TA1670
2Sk3077 Abstract: No abstract text available Text: 2SK3077 東芝電界効果トランジスタシリコン N チャネル MOS 形 2SK3077 ○ UHF 帯電力増幅用単位: mm ご注意本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に使用することは意図もされてい	Original	PDF	2SK3077 030519TAA 2Sk3077
2SK3079A Abstract: No abstract text available Text: 2SK3079A 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK3079A ○ 470 MHz 帯増幅用単位: mm ご注意本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に使用することは意図もされてい	Original	PDF	2SK3079A 50dBmW 2SK3079A
2SK3077A Abstract: No abstract text available Text: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW · Gain: Gp ≥ 10.5dB · Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics	Original	PDF	2SK3077A 2SK3077A
Untitled Abstract: No abstract text available Text: TOSHIBA Discrete Devices RF P ower MOSFET Power 2SK3078A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.7 7 V 1. Vgs = 0.5V ∼ 1.7V 0.05V	Original	PDF	2SK3078A 110mA 470MHz 23dBm 23dBm 12ulations.
2SK3075 MOSFET TRANSISTOR Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC	Original	PDF	2SK3075 961001EAA1 520MHz, 500mW 2SK3075 MOSFET TRANSISTOR
Untitled Abstract: No abstract text available Text: 2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 27.0 dBmW (Min.) Gain : GP = 12.5 dB (Min.) Drain Efficiency : ηD = 46% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	Original	PDF	2SK3078 SC-62
2sk3078 Abstract: No abstract text available Text: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm • • • Output power: Po > = 28.0dBmW Gain: Gp > = 8.0dB Drain Efficiency: ηD > = 50% Maximum Ratings Ta = 25°C Characteristics	Original	PDF	2SK3078A SC-62 2sk3078
2SK3078 Abstract: No abstract text available Text: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 28.0dBmW • Gain: Gp ≥ 8.0dB • Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics	Original	PDF	2SK3078A SC-62 2SK3078
Untitled Abstract: No abstract text available Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.	Original	PDF	2SK3077

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2SK307 Search Results

2SK307 Result Highlights (2)

2SK307 Price and Stock

Rochester Electronics LLC 2SK3072-TB-E

Toshiba America Electronic Components 2SK3078A(TE12L

Toshiba America Electronic Components 2SK3074(TE12L.F)

Toshiba America Electronic Components 2SK3079ATE12LQ

Aptina Imaging 2SK3072-TB-E

2SK307 Datasheets (41)

2SK307 Datasheets Context Search

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2SK3074

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Hitachi DSA00276

2SK3079

2sk3078

2SK3077

2SK3077

2SK3075

Hitachi DSA00280

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ta-1670

2Sk3077

2SK3079A

2SK3077A

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2SK3075 MOSFET TRANSISTOR

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2sk3078

2SK3078

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