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    Renesas Electronics Corporation 2SK3574

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Drain Current (Abs) (ID): 48 A; JEDEC-95 Code: TO-220AB;
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    2SK3574 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3574 Kexin N-Channel MOSFET Original PDF
    2SK3574 NEC N-channel enhancement type Power MOS FET Original PDF
    2SK357/4 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3574-S NEC Switching N-Channel Power MOS FET Original PDF
    2SK3574-Z NEC Switching N-Channel Power MOS FET Original PDF
    2SK3574-ZK NEC Switching N-Channel Power MOS FET Original PDF

    2SK3574 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3574

    Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current


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    2SK3574 2SK3574 O-220AB 2SK3574-S O-262 2SK3574-ZK O-263 2SK3574-Z O-220SMDNote 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z PDF

    2SK3574-ZK

    Abstract: 2SK3574 2SK3574-S 2SK3574-Z MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current


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    2SK3574 2SK3574 O-220AB 2SK3574-S O-262 2SK3574-ZK O-263 2SK3574-Z O-220SMDNote 2SK3574-ZK 2SK3574-S 2SK3574-Z MP-25 MP-25Z PDF

    2SK3574

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. VDD = 24 V, VGS = 10 V, ID = 48 A Built-in gate protection diode


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    2SK3574 O-263 2SK3574 PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


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    G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP PDF

    2SK3574

    Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


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    SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 PDF

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


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    SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    SC-95

    Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
    Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


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    MP-10, SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) O-252Z, O-252ZK, O-263ZJ, O-263ZK, SC-95 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


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    IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 PDF

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


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    D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 PDF