2SK3668 Search Results

2SK3668 Result Highlights (3)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK3668-ZK-E1-AY		Renesas Electronics Corporation	Switching N-Channel Power Mosfet, MP-25ZK, /Embossed Tape
2SK3668-ZK-E1-AZ		Renesas Electronics Corporation	Switching N-Channel Power Mosfet
2SK3668-ZK-E2-AY		Renesas Electronics Corporation	Switching N-Channel Power Mosfet

2SK3668 Price and Stock

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Rochester Electronics LLC 2SK3668-ZK-E1-AY POWER FIELD-EFFECT TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3668-ZK-E1-AY	Bulk			88	1 - 10 - 100 $3.44 1000 $3.44 10000 $3.44	Buy Now
Renesas Electronics Corporation 2SK3668-ZK-E1-AY SWITCHING N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3668-ZK-E1-AY		20,800		93	1 - 10 - 100 $3.8875 1000 $3.5125 10000 $3.5125	Buy Now
Rochester Electronics	2SK3668-ZK-E1-AY		20,800		1	1 $3.31 10 $3.31 100 $3.11 1000 $2.81 10000 $2.81	Buy Now

2SK3668 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK3668		Kexin	N-Channel MOSFET		Original	PDF
2SK3668		NEC	N-channel power MOS FET (switching element)		Original	PDF
2SK3668		TY Semiconductor	N-Channel MOSFET - TO-263		Original	PDF
2SK3668-ZK		NEC	Switching N-Channel Power MOS FET		Original	PDF

2SK3668 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK3668 Abstract: 2SK3668-ZK Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high	Original	PDF	2SK3668 2SK3668 2SK3668-ZK O-263 MP-25ZK) O-263) 2SK3668-ZK
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SK3668 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. VGS = 10 V, ID = 5.0 A 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.55 Surface mount package available +0.2 2.54-0.2	Original	PDF	2SK3668 O-263
2SK3668 Abstract: No abstract text available Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3668 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. VGS = 10 V, ID = 5.0 A 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.55 Surface mount package available +0.2 2.54-0.2	Original	PDF	2SK3668 O-263 2SK3668
2SK3668 Abstract: 2SK3668-ZK Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
MPA2733GR Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
mc10087f1 Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.	Original	PDF	IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
2SC5664 Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation	Original	PDF	D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326