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    2SK370 Search Results

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    2SK370 Price and Stock

    Toshiba America Electronic Components 2SK3700(F)

    MOSFET N-CH 900V 5A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3700(F) Tray 103 1
    • 1 $3.12
    • 10 $2.03
    • 100 $1.4083
    • 1000 $1.06326
    • 10000 $1.0075
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    Avnet Americas 2SK3700(F) Tube 16 Weeks 50
    • 1 -
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    • 100 $1.20094
    • 1000 $1.0881
    • 10000 $1.0881
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    Mouser Electronics 2SK3700(F) 143
    • 1 $2.66
    • 10 $1.83
    • 100 $1.3
    • 1000 $1
    • 10000 $1
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    GLYN GmbH & Co. KG 2SK3700(F) 100
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    EBV Elektronik 2SK3700(F) 19 Weeks 100
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    onsemi 2SK3703

    MOSFET N-CH 60V 30A TO220ML
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3703 Bag 400
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    • 1000 $1.2864
    • 10000 $1.2864
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    onsemi 2SK3708

    MOSFET N-CH 100V 30A TO220ML
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    DigiKey 2SK3708 Bulk
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    Rochester Electronics LLC 2SK3702

    FOR 60V MOTOR DRIVERS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3702 Bulk 398
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    • 1000 $0.75
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    onsemi 2SK3704

    MOSFET N-CH 60V 45A TO220ML
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3704 Bag 300
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    • 1000 $1.8788
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    2SK370 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK370 Toshiba N-Channel MOSFET Original PDF
    2SK370 Unknown FET Data Book Scan PDF
    2SK370 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK370 Toshiba Silicon N channel field effect transistor for low noise audio amplifier applications. Suitable for use as first stage for equalizer and MC head amplifiers Scan PDF
    2SK370 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK3700 Toshiba Field Effect Transistor Silicon N Channel MOS Type Original PDF
    2SK3700(F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 5A TO-3PN Original PDF
    2SK3702 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3702JS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK3703 On Semiconductor 2SK3703 - Power MOSFET 60V 30A 26 mOhm Single N-Channel TO-220FP Original PDF
    2SK3703 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3703-1E On Semiconductor 2SK3703 - N-Channel Power MOSFET, 60V, 30A, 26mOhm, TO-220F-3SG Original PDF
    2SK3704 On Semiconductor 2SK3704 - Power MOSFET 60V 45A 14 mOhm Single N-Channel TO-220FP Original PDF
    2SK3704 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3705 Sanyo Semiconductor 2SK3705 Original PDF
    2SK3705 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3706 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3707 On Semiconductor 2SK3707 - TRANSISTOR 20 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220ML, 3 PIN, FET General Purpose Power Original PDF
    2SK3707 Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3707-1E On Semiconductor 2SK3707 - N-Channel Power MOSFET, 100V, 20A, 60mOhm, TO-220F-3SG Original PDF

    2SK370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba k3700

    Abstract: 2SK3700 K3700 SC-65
    Text: 2SK3700 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original
    PDF 2SK3700 10VID SC-65 2-16C1B toshiba k3700 2SK3700 K3700 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK3700 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original
    PDF 2SK3700

    Untitled

    Abstract: No abstract text available
    Text: 2SK3707 Ordering number : EN7706A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3707 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=45mΩ (typ.) 4V drive • Input capacitance Ciss=2150pF (typ.) Specifications


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    PDF EN7706A 2SK3707 2150pF PW10s,

    Untitled

    Abstract: No abstract text available
    Text: 2SK3704 Ordering number : ENN7806A 2SK3704 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SK3704 ENN7806A

    K3705

    Abstract: 2SK3705
    Text: 2SK3705 注文コード No. N 7 7 0 5 2SK3705 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 ・モータドライブDC / DC コンバータ用等。


    Original
    PDF 2SK3705 IT06733 IT06734 IT06735 IT06736 K3705 2SK3705

    toshiba k3700

    Abstract: 2SK3700 K3700 2SK37 VDD400 k370
    Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original
    PDF 2SK3700 toshiba k3700 2SK3700 K3700 2SK37 VDD400 k370

    2SK3707

    Abstract: No abstract text available
    Text: 2SK3707 Ordering number : ENN7706 2SK3707 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SK3707 ENN7706 2SK3707

    K3708

    Abstract: 2SK3708
    Text: 2SK3708 Ordering number : ENN7707 2SK3708 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SK3708 ENN7707 K3708 2SK3708

    K3704

    Abstract: 2SK3704 MOSFET 20V 45A
    Text: 2SK3704 Ordering number : ENN7806A 2SK3704 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SK3704 ENN7806A K3704 2SK3704 MOSFET 20V 45A

    2SK370* spice

    Abstract: 0.13 bsim3v3 2SK3704 6169 bsim3 26E03
    Text: 2SK3704 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.4 NLX 4.7E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.58 RDSW 1.67E+04 WINT NFACTOR 0.53 CDSCD PCLM 0.3 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 2.0E-11 CGDL 3.0E-10 CLC


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    PDF 2SK3704 7E-07 0E-21 0E-11 0E-10 0E-09 0E-07 6169770E-6 6169770E-12 3E-05 2SK370* spice 0.13 bsim3v3 2SK3704 6169 bsim3 26E03

    EN7681A

    Abstract: 2SK3703 K3703
    Text: 2SK3703 Ordering number : EN7681A SANYO Semiconductors DATA SHEET 2SK3703 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter.


    Original
    PDF 2SK3703 EN7681A EN7681A 2SK3703 K3703

    2SK370

    Abstract: 2SJ108
    Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


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    PDF 2SK370 2SJ108 2SK370 2SJ108

    Untitled

    Abstract: No abstract text available
    Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original
    PDF 2SK3700

    K3703

    Abstract: No abstract text available
    Text: 2SK3703 Ordering number : EN7681B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3703 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=20mΩ (typ.) 4V drive • Input capacitance Ciss=1780pF (typ.) Specifications


    Original
    PDF EN7681B 2SK3703 1780pF PW10s, K3703

    K3705

    Abstract: 2SK3705
    Text: 2SK3705 Ordering number : ENN7705 N-Channl Silicon MOSFET 2SK3705 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee.


    Original
    PDF 2SK3705 ENN7705 K3705 2SK3705

    k3706

    Abstract: MAX 77663 K3706 mosfet 2SK3706
    Text: 2SK3706 Ordering number : ENN7766 2SK3706 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SK3706 ENN7766 k3706 MAX 77663 K3706 mosfet 2SK3706

    K3704

    Abstract: 2SK3704
    Text: 2SK3704 注文コード No. N 7 8 0 6 2SK3704 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 ・モータドライブ , DC / DC コンバータ用等。


    Original
    PDF 2SK3704 IT06623 IT06622 IT06624 IT06625 K3704 2SK3704

    Untitled

    Abstract: No abstract text available
    Text: 2SK3708 2SK3708 Ordering number : ENN7707 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF 2SK3708 ENN7707 2SK3708/D

    toshiba k3700

    Abstract: K3700 2SK3700
    Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original
    PDF 2SK3700 toshiba k3700 K3700 2SK3700

    k3702

    Abstract: 2SK3702JS 2SK3702 a0632
    Text: 2SK3702JS Ordering number : ENA0632 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3702JS General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.


    Original
    PDF 2SK3702JS ENA0632 A0632-5/5 k3702 2SK3702JS 2SK3702 a0632

    K3702

    Abstract: 2SK3702 D1306
    Text: 注文コード No. N 7 5 0 2 2SK3702 三洋半導体データシート N 2SK3702 特長 N チャネル MOS 形シリコン電界効果トランジスタ DC / DC コンバータ用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original
    PDF 2SK3702 IT06205 IT06201 IT06207 IT06208 IT06209 K3702 2SK3702 D1306

    2SK370

    Abstract: 2SJ108
    Text: T O S H IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)


    OCR Scan
    PDF 2SK370 2SJ108 55MAX. 2SK370 2SJ108

    2SJ108

    Abstract: 2SK370 IDSS -6.5mA
    Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Suitable for Use as First Stage for Equalizer and MC Head 4.2MAX. Amplifiers. High |Yfc| : |Yfs | = 22ms Typ. (VDg = 10V, VGS = 0, IDg g = 3mA)


    OCR Scan
    PDF 2SK370 2SJ108 55MAX 2SK370 IDSS -6.5mA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 7 Q FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm S u ita b le for U se as F ir s t S ta g e for E q u a liz e r a n d MC H e a d 4.2 VI A X . Amplifiers. TTiO“


    OCR Scan
    PDF 2SK370 2SJ108