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    2SK75 Price and Stock

    ITT Interconnect Solutions DDM-43W2S-K75

    DDM-43W2S-K75 - Bulk (Alt: DDM-43W2S-K75)
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    TME DDM-43W2S-K75 6
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    IBS Electronics DDM-43W2S-K75 3
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    Master Electronics DDM-43W2S-K75
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    ITT Interconnect Solutions 2DB52S-K75

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    ITT Interconnect Solutions DBM-17W2S-K75

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    2SK75 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK750 Unknown FET Data Book Scan PDF
    2SK751 Unknown FET Data Book Scan PDF
    2SK752 Unknown FET Data Book Scan PDF
    2SK753 Unknown FET Data Book Scan PDF
    2SK754 Unknown FET Data Book Scan PDF
    2SK755 Unknown FET Data Book Scan PDF
    2SK755 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK755 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK756 Unknown FET Data Book Scan PDF
    2SK757 Unknown FET Data Book Scan PDF
    2SK757 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK757 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK758 Unknown FET Data Book Scan PDF
    2SK758 Unknown Scan PDF
    2SK758 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK758 Panasonic Silicon N-channel Power F-mos Fet Scan PDF
    2SK759 Unknown FET Data Book Scan PDF
    2SK759 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK759 Panasonic Silicon N-channel Power F-MOS FET Scan PDF

    2SK75 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk2324

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/


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    PDF 2SK758 2SK2324

    2SK2324

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


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    PDF 2SK758 2SK2324 O-220E

    Untitled

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed switching 6.5±0.1 ● High drain-source voltage (VDSS) 4.35±0.1 1.8±0.1 2.5±0.1 5.3±0.1 3.0±0.1 0.85±0.1 Parameter Symbol Rating Unit Drain-Source breakdown voltage


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    PDF 2SK758 2SK2660 SC-63

    Untitled

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2790 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● ● High-speed switching 6.0±0.5 ● No secondary breakdown ■ Applications ● Motor drive 1.0±0.1 1.5max. 1.1max. 2.0 High-speed switching 10.5min. ●


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    PDF 2SK758 2SK2790

    Untitled

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


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    PDF 2SK758 2SK2323 O-220E

    Untitled

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK758 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : RDS(on) = 0.45Ω(typ) 16.7±0.3 • Applications ø3.1±0.1 converter ● Solenoid relay 14.0±0.5 ● Non-contact ● Motor 4.2±0.2 switching : t f = 45ns(typ)


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    PDF 2SK758

    2sk2323

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/


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    PDF 2SK758 2SK2323

    2SK2014

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2014 Silicon N-Channel Power F-MOS Unit : mm • Features 6.5±0.1 5.3±0.1 secondary breakdown 4.35±0.1 1.8±0.1 2.5±0.1 3.0±0.1 ● Low-voltage ■ Applications converter ● Solenoid relay drive 0.85±0.1 1.0±0.2 ● Non-contact


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    PDF 2SK758 2SK2014 SC-63 2SK2014

    2SK752

    Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
    Text: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777


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    PDF 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 NEC diode 3N125 3N126 2SK791 3N105 3N134 82230

    2SK2324

    Abstract: *k2324 2SK75 2SK758
    Text: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed switching ø3.2±0.1 ● Solenoid ● Motor relay drive drive ● Control equipment ● Switching 7˚


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    PDF 2SK758 2SK2324 *k2324 2SK75 2SK758

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


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    PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SK759

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK 759 2SK759 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : RDs (on) = 0.25fi (typ.) • High switching rate : tf = 55ns (typ.) • No secondary breakdown ■ Application • • •


    OCR Scan
    PDF 2SK759 2SK759

    2SK757

    Abstract: 251C
    Text: 2SK757 P o w e r F-MOS FET 2SK757 Silicon N-channel Power F-M O S FET • P ackage Dimensions ■ Features • L ow ON r e s is ta n c e R ds o n : Unit: mm (o n ) = 0 . 2 2 i l ( ty p .) R ds • H ig h s w itc h in g r a t e : t r = 6 0 n s ( t y p .)


    OCR Scan
    PDF 2SK757 O-220 bT32052 QG17Qb4 2SK757 251C

    2sk75

    Abstract: FLS2
    Text: Power F-MOS FET 2SK759 2SK759 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistance R ds on : RDs (on) = 0.25il (typ.) • High switching rate : tf=55ns (typ.) • No secondary breakdown Unit: mm ■ Application • DC-DC converter


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    PDF 2SK759 VDD-100V 170b7 SK759 2sk75 FLS2

    2SK755

    Abstract: TCI-220 251C
    Text: Power F-MOS FET 2SK755 2SK755 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS : R ds, on = 0 . 3 3 0 (ty p .) Unit: mm • High sw itch in g r a te : tf = 4 5 n s (ty p .) • N o seco n d a ry breakdow n


    OCR Scan
    PDF 2SK755 TCI-220 0D170bE 2SK755 251C

    2sk758

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK758 2SK758 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features Unit: mm • Low ON re sistan c e R ds on : R ds (on) = 0 .3 3 il (typ.) • High sw itching ra te : tf = 45ns (typ.) • No secondary breakdow n ■Application


    OCR Scan
    PDF 2SK758 O-220 2sk758

    2SK757

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK 757 2SK757 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds Unit: mm (on) = 0 .2 2 il (typ.) • High sw itching ra te : tr= 6 0 n s (typ.) • No secondary breakdow n ■ Application


    OCR Scan
    PDF 2SK757 2SK757

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK755 2SK755 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce Rds : Rds, Unit: mm on = 0 .3 3 0 (typ.) • High switching ra te : t f = 45ns (typ.) • No secondary breakdow n ■Application • DC-DC converter


    OCR Scan
    PDF 2SK755 TCI-220

    2SK2324

    Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)


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    PDF 2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323

    2sk type

    Abstract: 2SK+series
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) 1Y h I ton (max.)


    OCR Scan
    PDF O-220E O-220F 2SK1331 bT32fl52 2sk type 2SK+series

    2SK996

    Abstract: No abstract text available
    Text: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46


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    PDF 2SK1868 O-220F 2SK1255 2SK1256 2SK1967 2SK1033 2SK1257 O-220E 2SK2578 2SK2579 2SK996

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


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    PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107