2SK974
Abstract: 2SK974S Hitachi DSA0015
Text: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK974
2SK974S
Hitachi DSA0015
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2SK974S
Abstract: Hitachi DSA002759
Text: 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on ≤ 0.18 Ω, VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 Ω, VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching
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4AK16
2SK970,
2SK1093,
2SK974
2SK974S
Hitachi DSA002759
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Hitachi DSA002751
Abstract: No abstract text available
Text: 4AK16 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance RDS on ≤ 0.18 Ω, VGS = 10 V, ID = 5 A RDS(on) ≤ 0.25 Ω, VGS = 4 V, ID = 5 A • Capable of 4 V gate drive • Low drive current
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4AK16
2SK970,
2SK1093,
2SK974
SP-10
D-85622
Hitachi DSA002751
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Untitled
Abstract: No abstract text available
Text: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK974
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2SK974S
Abstract: 2sk974 hitachi
Text: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for m otor drive. DC-DC converter, pow er switch and solenoid drive
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2SK974
2SK974S
2sk974 hitachi
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2SK970
Abstract: diode 50v 5A 2SK974 2SK1093 4AK16 SP-10 2sk109
Text: HITACHI 4AK16 SILIC O N N-CHANNEL P O W E R M O S F E T A RRA Y HIGH S P E E D P O W E R SW ITCH ING • FEATURES I • Low On-Resistance Ros on ^ 0.18 Í1 , = 10 V, ln = 5 A R ds (on) ^ 0.25 £2 , VGS = 4 V, l0 = 5 A • Capable of 4 V Gale Drive • Low Drive Current
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4AK16
2SK970,
2SK1093
2SK974
I234S678S10
SP-10)
2SK970
2SK970
diode 50v 5A
2SK974
2SK1093
4AK16
SP-10
2sk109
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Untitled
Abstract: No abstract text available
Text: 4AK16 blE D IHIT4 HITACHI/ OPTOELECTRONICS S ILIC O N N -C H A N N EL P O W ER M O S F E T ARRAY 26 5 ± 0 3 HIGH SPEED POWER SW ITCHING • FEATURES • Low On-Resistance RDS (° n) — °-18 • Capable of 4 V Gate Drive • Low Drive Current • High Speed Switching
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4AK16
2SK970,
2SK1093
2SK974
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2SJ235
Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SJ235
2sk1299
2SK1878
2SJ299
2sj2 high voltage p channel mosfet
2SJ214
2sk mosfet
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2sj217
Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220
Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2sj217
pf0030 hitachi
2SJ295
2SK1919
PF0042
2SJ214
2SJ220
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2sk1299
Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in
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2SJ2-46
2SJ223
2SJ182
2SJ245
2SJ214
2SJ219
2SJ220
2SJ242
2SJ175
2SJ176
2sk1299
2SJ295
2SJ299
transistor 2sk
2SJ278
2SJ279
2SJ290
2SJ291
2SJ292
2SJ298
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2sk1299
Abstract: 2SK1763 2SK1878 2sj177 2SJ295 2SK1579 TO220FM 2SJ244 2sj235 2SJ246
Text: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D-IV L Series Item Package
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2SJ244
2SJ246
2SJ245
2SJ317
2SJ298
2SJ300
2SJ299
2SJ278
2SJ279
2SJ290
2sk1299
2SK1763
2SK1878
2sj177
2SJ295
2SK1579
TO220FM
2SJ244
2sj235
2SJ246
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2SK44
Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SK44
2SJ182
2SJ214
2SK513
2SJ235
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2sj177
Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2sj177
2sk1778
2SK97-2
2sk1301
2sj175
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HITACHI Power MOSFET Arrays
Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
HITACHI Power MOSFET Arrays
2sk1299
2SK975
2sk1306
2SK1919
2SK970
2SK971
2SK972
2SK973
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2SK1254
Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1254
2sj177
2SK970
2SK971
2SK972
2SK973
2SK975
4AK16
4AK17
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2sk1299
Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m
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OCR Scan
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2sk1299
PF0042
2SJ295
2SJ299
2SK1919
Hitachi Scans-001
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2sj2 high voltage p channel mosfet
Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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flyback 200w
Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1094 2sk1328 2SK1762
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other.
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
flyback 200w
2SK1635
dc dc flyback 200w
2SK119
mosfet hitachi
2SK513
2SK822
2SK1094
2sk1328
2SK1762
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PF0040
Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices
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2SJ2-46
2SJ223
2SJ182
2SJ245
2SJ214
2SJ219
2SJ220
2SJ242
2SJ175
2SJ176
PF0040
2sk mosfet
pf0030 hitachi
2sj217
2SJ299
2sk mosfet rf power
2sk1299
2SJ214
2SJ295
2SK1919
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SK109
2SJ236
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2sj177
pf0030 hitachi
2SJ299
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
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2SJ113
Abstract: 2cv1 2SK1665 2SK513 2SK1635 121A-4 2SJ214 2SK1094 GN12030 2SK1152
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other.
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OCR Scan
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SJ113
2cv1
2SK1665
2SK513
2SK1635
121A-4
2SJ214
2SK1094
GN12030
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25K1772
Abstract: 2SK1763 2SJ300 2SJ214 2SJ295 2sk mosfet TO220FM 2SJ244 2SK1645 2SJ246
Text: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D -IV L Series Item Package
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OCR Scan
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2SJ244
2SJ246
2SJ245
2SJ317
2SJ298
2SJ300
2SJ299
2SJ278
2SJ279
2SJ290
25K1772
2SK1763
2SJ214
2SJ295
2sk mosfet
TO220FM
2SJ244
2SK1645
2SJ246
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2SJ235
Abstract: 2sk1299 2SJ182 2SJ244 2SJ250 2SK1336 2SK1337 2SK1579 2SK1697 2SK1698
Text: 8 1.5.3 HITACHI DlII-Series DIII-L Series Low Voltage Range, VDSS up to 120V The third generation of D-Series MOSFETs from Hitachi benefits from the latest development in Power MOSFET technology. The low voltage range of DIH-Series MOSFETs has the following enhanced features:-
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