2n2222 national semiconductor
Abstract: Widlar national 2n2222 2N2222 national 2n2222 transistor LM113 2N2222 NPN Transistor features LM113 equivalent 2N2222 AN-56
Text: INTRODUCTION Temperature compensated zener diodes are the most easily used voltage reference However the lowest voltage temperature-compensated zener is 6 2V This makes it inconvenient to obtain a zero temperature-coefficient reference when the operating supply voltage is 6V or lower With the
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LM113
2n2222 national semiconductor
Widlar
national 2n2222
2N2222 national
2n2222 transistor
2N2222 NPN Transistor features
LM113 equivalent
2N2222
AN-56
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zener diode
Abstract: Zener Diode 5A high hfe transistor transistor Ic 1A datasheet NPN digital transistor diode Zener DTDG14GP zener- diode "Zener Diode" TA DIODE ZENER
Text: Transistors Digital transistor built in resistor and zener diode Driver (60V,1A) DTDG14GP FFeatures 1) High hFE, typically hFE = 750 at VCE = 2V at IC = 0.5A. 2) Low saturation voltage, typically VCE(sat) = 0.4V at IC /IB = 500mA / 5mA. 3) Built-in zener diode to protect the
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DTDG14GP
500mA
96-376-DG14GP)
zener diode
Zener Diode 5A
high hfe transistor
transistor Ic 1A datasheet NPN
digital transistor
diode Zener
DTDG14GP
zener- diode
"Zener Diode"
TA DIODE ZENER
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marking DIODE 2U 04
Abstract: DTDG23YP T100 marking 2U diode II1001 Diode marking CODE 5M
Text: DTDG23YP Transistors Digital transistor built-in resistors and zener diode , driver (60V, 1A) DTDG23YP zFeatures 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A) 2) Low output voltage. (Typ. 0.4V at IO/II=500/50mA) 3) Built-in zener diode gives strong protection against reverse.
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DTDG23YP
500/50mA)
marking DIODE 2U 04
DTDG23YP
T100
marking 2U diode
II1001
Diode marking CODE 5M
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MP6H1
Abstract: No abstract text available
Text: MP6H1 Transistors General purpose Dual digital transistors MP6H1 zFeatures 1) High hFE. hFE=300(Min.)(VCE / IC=2V/500mA) 2) Low saturation voltage. VCE(sat)=400mV(Max.) (IC/IB=500mA/5mA) 3) Built in Zener diode for protection against surges when connected to inductive load.
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V/500mA)
400mV
500mA/5mA)
MP6H1
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DTDG14GP
Abstract: T100 sc-62 zener
Text: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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DTDG14GP
500mA
SC-62
DTDG14GP
T100
sc-62 zener
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MP6H1
Abstract: No abstract text available
Text: MP6H1 Transistors General purpose Dual digital transistors MP6H1 zFeatures 1) High hFE. hFE=300(Min.)(VCE / IC=2V/500mA) 2) Low saturation voltage. VCE(sat)=400mV(Max.) (IC/IB=500mA/5mA) 3) Built in Zener diode for protection against surges when connected to inductive load.
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V/500mA)
400mV
500mA/5mA)
MP6H1
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20M diode zener
Abstract: 102k1k DTDG14GP T100
Text: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)
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DTDG14GP
500mA/5mA)
SC-62
100m200m500m
20M diode zener
102k1k
DTDG14GP
T100
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Untitled
Abstract: No abstract text available
Text: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)
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DTDG14GP
500mA/5mA)
SC-62
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistor built-in resistors Driver (6OV, 1 A) DTDG14GP @Features 1) High hFE. hFE = 750 (Typ.) 2) @External dimensions (Units: mm) (VCE/IC = 2V/05A) I I Low VCE(sat). (Ic/lB = 500mA/5mA) 3) Built-in zener diode for strong protection against reverse surges
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DTDG14GP
V/05A)
500mA/5mA)
SC-62
-55-l
500mA
30MHz
lOOm2OOm53h1
50m100m200m500m
DTB114TK
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5v 1a ZENER DIODE
Abstract: about zener diode JAPAN transistor Zener Diode frequency DTDG23YP T100 100M200M
Text: DTDG23YP Transistors 1A / 60V Digital transistor with built-in resistors and zener diode DTDG23YP zExternal dimensions (Unit : mm) MPT3 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High DC current gain. (Min. 300 at VO / IO=2V / 0.5A) 2) Low Vo(on). (Typ. 0.4V at IO / II=500mA / 5mA)
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DTDG23YP
500mA
5v 1a ZENER DIODE
about zener diode
JAPAN transistor
Zener Diode frequency
DTDG23YP
T100
100M200M
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marking Z58
Abstract: z58 diode Zener 9v 201 zener diode sot23 ZX84C z58 zener diode zener diode zx 12 zener 8v diode MARKING z57 ZX84-B
Text: 300mW SOT-23 ZENER DIODES BZX84 SERIES Features S OT -23 Vz R ange 2.4 to 75V Power Dis s ipation 300mW .122 3.1 .110 (2.8) .016 (0.4) Top V iew .056 (1.43 ) .052 (1.33 ) 3 1 0.031 (0.8) 2 0.035 (0.9) 0.079 (2.0) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125)
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300mW
OT-23
BZX84
300mW
marking Z58
z58 diode
Zener 9v
201 zener diode sot23
ZX84C
z58 zener diode
zener diode zx 12
zener 8v diode
MARKING z57
ZX84-B
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C9V1W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C9V1W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C11W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C11W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C3V9W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C3V9W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C4V7W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C4V7W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C27W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C27W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C6V2W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C6V2W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C2V4W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C2V4W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C6V8W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C6V8W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C13W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C13W
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 200mW Surface Mount Zener Diode BZX84C12W Features Planar Die Construction 200mW Power Dissipation Ultra-Small Surface Mount Package Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air
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200mW
BZX84C12W
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BZM85C39
Abstract: Marking BZM 2381P BZM85C6V8 zener 5v6 BZM85C8V2
Text: SbE D f Z 7 • 7T2T237 GDHlSbl T72 ■ S 6 T H S G S -T H O M S O N T- / / - / 5 BZM 85 C 2V 7 ^ 1 0 0 S G S-TH0NS0N ZENER DIODES ■ VOLTAGE RANGE : 2.7V TO 100V DESCRIPTION 1.3W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values
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00415b2
ELEC000
BZM85
BZM85E
BZM85B
200mA)
BZM85C39
Marking BZM
2381P
BZM85C6V8
zener 5v6
BZM85C8V2
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BZX 27 1.3W
Abstract: zener BZX 86 BZX 85 1.3W ZENER 2V7 zener BZX 4v7 bzx85c BZX 1.3W BZX85C150 zener BZX 2.7V 85C5V1
Text: SbE D r r z ^ 7# m 7TET237 0D415Û7 2fi=i • SGTH SCS-THOMSON [MmMûra«S T -u -tS - B Z X 85 C 2V 7 S G S-THOHSON 200 ZENER DIODES ■ LARGE VOLTAGE RANGE : 2.7V TO 200V ■ DOUBLE SLUG TYPE CONSTRUCTION ■ PRO ELECTRON REGISTRATION : 2.7V TO 110V ■ CECC FOR TYPES : 2.7V TO 82V
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7T2T237
0Q415Ã
BZX 27 1.3W
zener BZX 86
BZX 85 1.3W
ZENER 2V7
zener BZX 4v7
bzx85c
BZX 1.3W
BZX85C150
zener BZX 2.7V
85C5V1
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Untitled
Abstract: No abstract text available
Text: CRIMSON SEMICONDUCTOR INC T=| DlF ESlMOTt. Q O O O a b O 2514096 C R I MSON SEMI C O N D U C T O R INC 99D 00360 D T~' ¡ / '/ $ ZENER DIODES Z w w rO lo d M with Py - 1 , 3 W Nota* and < Eterificai chancUrtctic« Kcfwn V BZX 85/C 2V 7 BZX85/C3V0 BZX 85/C 3V 3
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BZX85/C3V0
05/C5V1
65/C6V
BZX06.
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