F 10 L 600
Abstract: DIL 330 65764 z1015
Text: L 65764 MATRA MHS 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 × 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip
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SMD-5962-38294
Abstract: No abstract text available
Text: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active
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SMD5962
SMD-5962-38294
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ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
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Untitled
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT SPECIFICATION Prepared also subject responsible if other EAB/FAC/P Johan Hörman Approved 1 (4) No. Checked BMR 463 series POL Regulators Input 4.5-14 V, Output up to 20 A / 66 W 1/1301-BMR 463Technical Uen Specification Date
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1/1301-BMR
463Technical
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Schmersal AZM 160
Abstract: Schmersal IEC 947-5-1 16b2 zener diode THERMAL Fuse m20 tf 115 c IEC 60947-5-1 limit switch ex d Schmersal AZM 160 22 ISO ultrasonic sensor standards symbols zener diode catalogue relay tec 1401 EN 50041 IEC 60947-5-1 limit switch
Text: L Protection – ATEX Explosion Protection Catalogue | Version 03 b_atep02v001.indd 1 08.12.2008 14:11:26 www.schmersal.com You will also find detailed information on our entire product progamme on our website: www.schmersal.com. Online documentation in six languages
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atep02v001
D-42279
D-42232
D-35435
D-35429
Schmersal AZM 160
Schmersal IEC 947-5-1
16b2 zener diode
THERMAL Fuse m20 tf 115 c
IEC 60947-5-1 limit switch ex d
Schmersal AZM 160 22
ISO ultrasonic sensor standards symbols
zener diode catalogue
relay tec 1401
EN 50041 IEC 60947-5-1 limit switch
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cyclohexene
Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
Text: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version 2 July 6, 2000 Matsushita Electric Industrial Co., Ltd. Contents 1. Purpose ････････････････････････････････････････････････････････1
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Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W
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1/1301-BMR
463Technical
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Untitled
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W
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BMR462
Abstract: fuse 12a smd
Text: E Ericsson Internal TABLE OF CONTENTS Prepared also subject responsible if other SEC/S Stella Song Approved 1 (1) No. Checked BMR462 series PoL Regulators Input 4.5-14 V, Output up to 12 A / 60 W 001 52-EN/LZT 146 434 Uen Specification Technical Date 2012-09-26
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BMR462
52-EN/LZT
fuse 12a smd
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary Specification Octal buffer/line driver with 5-volt tolerant 74LVC2244A inputs/outputs; clamping resistor; 3-state_ 74LVCH2244A FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; t, = t, < 2.5 ns • 5-Volt tolerant inputs/outputs,
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74LVC2244A
74LVCH2244A
LVCH244A
74LVC
74LVCH2244A
74LVC2244A
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Untitled
Abstract: No abstract text available
Text: SN74LVC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER S CAS292 - JANUARY 1993 - REVISED MARCH 1994 EPIC Enhanced-Performance Implanted CMOS Submicron Process Typical Vq lp (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C Typical V q h v (Output V q h Undershoot)
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SN74LVC157
SCAS292
SN74LVC157
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 16 Megabit CMOS SRAM DP3S512X32MXP PRELIMINARY DESCRIPTION: The DP3S512X32M XP is a 68-pin surface mount module consisting of four 5 1 2 K x 8 SRAM devices in plastic TSO P packages surface mounted on a FR-4 substrate. The module is available with "I"-Leads.
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DP3S512X32MXP
68-pin
DP3S512X32MXP
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T C 7 4 LCXQ2 F / F N / F S Low-Voltage Quad 2-Input NOR Gate with 5V Tolerant Inputs and Outputs The TC74LCX02 is a high performance CMOS 2-INPUT NOB GATE. Designed for use in 3,3 Volt systems, it achieves high speed operation while maintaning the CMOS tow power dissi
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TC74LCX02
500mA
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LVCH16245
Abstract: SN74ALVCH16245
Text: SN74ALVCH16245 16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS S C ES015-JULY 1995 DGG OR DL PACKAGE TOP VIEW Member of the Texas Instruments Wldebus Family EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process ESD Protection Exceeds 2000 V Per
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SN74ALVCH16245
16-BIT
SCES015-JULY1995
MIL-STD-883C,
JESD-17
300-mil
16-bit
Zo-50Q,
LVCH16245
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Untitled
Abstract: No abstract text available
Text: IIMII HM 65764 DATA SHEET_ KX 8 HIGH SPEED CMOS SRAM 8 FEATURES « FAST ACCESS TIME COMMERCIAL : 15/20/25/35/45/55 ns max INDUSTRIAL/MILITARY : 20/25/35/45/55 ns (max) • LOW POWER CONSUMPTION ACTIVE: 380 mWftyp) STANDBY : 110 mW (typ) . WIDE TEMPERATURE RANGE:
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8192x8
65764/Rev
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74151 pin configuration
Abstract: 74151 TTL 74151 MSM10S0000 LS 74151
Text: O K I Semiconductor M S M 1 0 S 0 0 0 0 _ 0.8|im Sea of Gates Family for High-Performance, 3 and 5 Volt Applications D E SC R IPTIO N The OKI MSM10S0000 Sea of Gates family is a high-performance, high-density semicustom product using OKI's scalable, 0.8|am drawn 0.6|_im effective , two layer metal, polysilicide, dual-well process
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MSM10S0000
MSM10S0000
16-Meg
MSM10S.
74151 pin configuration
74151
TTL 74151
LS 74151
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve
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256KX
16-bit
HY51V4260B
400mil
40pin
40/44pin
1AC26-00-MAY94
4b75Gflfl
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74AC11258
Abstract: No abstract text available
Text: 54AC11258, 74AC11258 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/ MULTIPLEXERS WITH 3-STATE OUTPUTS TIO115— D 3257, JAN U AR Y 1989— REVISED M AR CH 1990 54AC11258 . . . J PACKAGE 74AC11258 . . . DW OR N PACKAGE 3-State Outputs Interface Directly with System Bus
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54AC11258,
74AC11258
TIO115--
500-mA
300-mil
54AC11258
74AC11258
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Untitled
Abstract: No abstract text available
Text: D E N S E -P A C m i c r o s V s r ~m s /H -D & n s u s High Density Memory Device 512 Megabit CM OS 3.3V EDO DRAM 256 Megabit CM OS 3.3V EDO DRAM 128 Megabit CM OS 3.3V EDO DRAM PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The/fi-7 e«JM series is a family of interchangeable memory
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30A196-00
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Untitled
Abstract: No abstract text available
Text: March 1994 DATA SHEET_ HM 65764 8 Kx 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE
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8192x8
65764/Rev
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Untitled
Abstract: No abstract text available
Text: PERICOM PI74ALVCH16652 16-Bit Bus Transceiver and Register with 3-State Outputs Product Description Product Features • • • • • • •
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11111111111111111111111111111111111111M11
PI74ALVCH16652
16-Bit
PI74ALVCH16373
48-pin
PS8135A
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upd4104
Abstract: 4104D HPD4104 IPD4104-1 PD4104
Text: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC N M O S RAM D E SC R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve
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uPD4104
uPD4104-1
uPD4104-2
PD4104
MPD4104
PD4104-2)
LM27S2S
//PD42S18160,
4104D
HPD4104
IPD4104-1
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Untitled
Abstract: No abstract text available
Text: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC NMOS RAM D E S C R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve
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MPD4104
MPD4104-1
MPD4104-2
PD4104
MPD4104
PD4104-2)
LM27S2S
DCH157M
//PD42S18160,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.
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32K-WORD
36-BIT
uPD431636L
768-word
36-bit
S100GF-65-8ET
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