BT151-500C
Abstract: MAC-210-10 BT138-800G BT134-600D BT138-600 Triacs bt138-600e PHILIPS semiconductor cross reference MAC228 BTA312-600D BT138X-600
Text: Thyristors Silicon Controlled Rectifiers SCRs Thyristors ON Semiconductor Cross Reference Guide Silicon Controlled Rectifiers (SCRs) - continued 3-Quadrant Triacs ON Semiconductor Part NXP Part IT(RMS) (A) VDRM (V) IGT (mA) Package ON Semiconductor Part
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C106B
BT148-400R
BT151-500C
O220AB
BTA204S-600C
OT428
C106D
BT300S-600R
BT151-500C
MAC-210-10
BT138-800G
BT134-600D
BT138-600
Triacs bt138-600e PHILIPS
semiconductor cross reference
MAC228
BTA312-600D
BT138X-600
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motorola 8807
Abstract: MAX1863
Text: 19-1438; Rev 2; 3/01 KIT ATION EVALU E L B A AVAIL Wireless and Satellite Handset Power-Management ICs Features ♦ 90% Efficient, 500mA Step-Down Converter ♦ Two 100mA DAC-Controlled LDOs One 200mA DAC-Controlled LDO One 20mA DAC-Controlled LDO ♦ 3- to 6-Cell NiCd or NiMH Operation
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500mA
100mA
200mA
375kHz,
535kHz,
670kHz,
925kHz
32-Pin
MAX886/MAX888/MAX1863
MAX886/MAX888MAX1863
motorola 8807
MAX1863
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527 MOSFET TRANSISTOR motorola
Abstract: MAX1863 MAX886 MAX886ECJ MAX888 MAX888ECJ TRANSISTOR 8808 W
Text: 19-1438; Rev 2; 3/01 KIT ATION EVALU E L B A AVAIL Wireless and Satellite Handset Power-Management ICs Features ♦ 90% Efficient, 500mA Step-Down Converter ♦ Two 100mA DAC-Controlled LDOs One 200mA DAC-Controlled LDO One 20mA DAC-Controlled LDO ♦ 3- to 6-Cell NiCd or NiMH Operation
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500mA
100mA
200mA
375kHz,
535kHz,
670kHz,
925kHz
32-Pin
MAX886/MAX888/MAX1863
32L/48L
527 MOSFET TRANSISTOR motorola
MAX1863
MAX886
MAX886ECJ
MAX888
MAX888ECJ
TRANSISTOR 8808 W
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m21ca
Abstract: SFOR3G42 sfor1g42 BT169D p0107db 03P4M 9CR1401C 2Nb91 150C35B s2512dk
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 DCR 1003SN0404 PSIJ1900-3 PSIJ2200-3 FT2500CL6 FT2500CL6 PSIJ2600-3 PSIJ3000-3 PSIJ3400-3 PSIK4000-3 T7S7035564DN ~~~~~~ 15 20 BTX1B-300 40C35 40C35B 55C35 55C35B 55C35BF 55C35F 70C35B jgg5~!jt25 30
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1003SN0404
PSIJ1900-3
PSIJ2200-3
FT2500CL6
PSIJ2600-3
PSIJ3000-3
PSIJ3400-3
PSIK4000-3
T7S7035564DN
m21ca
SFOR3G42
sfor1g42
BT169D
p0107db
03P4M
9CR1401C
2Nb91
150C35B
s2512dk
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MCMA120UJ1800ED
Abstract: No abstract text available
Text: MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled high-side + free wheeling Diode Part number MCMA120UJ1800ED Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3
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MCMA120UJ1800ED
60747and
20120402a
2768-T1-m
MCMA120UJ1800ED
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Untitled
Abstract: No abstract text available
Text: SKDH 115 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPONTTM 5 Half Controlled 3-phase Bridge Rectifier
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thyristor 201
Abstract: single phase thyristor controlled rectifier
Text: SKDH 145 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPONTTM 5 Half Controlled 3-phase Bridge Rectifier
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MCMA120UJ1800ED
Abstract: No abstract text available
Text: MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled high-side + free wheeling Diode Part number Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3 4/5 6/7 21 / 22
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MCMA120UJ1800ED
60747and
20120402a
2768-T1-m
MCMA120UJ1800ED
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Untitled
Abstract: No abstract text available
Text: VVZB170-16ioXT 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 170 A I C25 = 155 A I FSM = 1100 A VCE sat = 2.05 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part number VVZB170-16ioXT Backside: isolated
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VVZB170-16ioXT
60747and
20120827c
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D7ZS
Abstract: 2N681 2N681-2N692 2N692 2N689 2N682 2N683 2N684 2N687 2N688
Text: 6 E SOLI D 3875081 Üi STATE G E SOLID STATE ÖE~| 3ß7SDfll 0D17tt.t 3 01E 17666 Silicon Controlled ¡*3 7* 2N681-2N692 File Number 96 TERMINAL DESIGNATIONS 25-A Silicon Controlled Rectifiers
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0017LLb
2N681-2N692
RCA2N681-2N692
O-208AA
2N681-2N692
N681-2N692.
2N681-2N692.
D7ZS
2N681
2N692
2N689
2N682
2N683
2N684
2N687
2N688
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scr C106D
Abstract: C106M RCA SCR C106m scr C106 AC scr c106d RCA-C106 JEDEC-TO-202AB C106D scr C106B C106D circuits
Text: SOLID STATE Dl Dlf|3ö7S0öl 0017704 7 3875081 G E SOLID STATE 0 1E 17704 D T-2 ^ -/3 Silicon Controlled Rectifiers- C106 Series File Number 1005 T ER M IN A L DESIG N AT IO N S 4-A Sensitive-Gate Silicon Controlled Rectifiers For Power-Switching and Control Application
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DD177GM
O-220AB
RCA-C106
110oC
00--A//js
82--A2s
10/ra
scr C106D
C106M RCA
SCR C106m
scr C106
AC scr c106d
JEDEC-TO-202AB
C106D
scr C106B
C106D circuits
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S6431M
Abstract: RCA-S6493M S6431 S6493M ctc 1288 dt-2s-n 92C5-27731RI
Text: E SOLI» STATE G □1 3875081 G E SOLID STATE Silicon Controlled Rectifiers DE I 3 fl7 5 Gñl G D 1 7 7 MS 4 J 01E 17742 D S6493M File Number Silicon Controlled Rectifier For High-Current Pulse Applications
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S6493M
RCA-S6493M*
3fl750Ã
S6493M
92CSH3366R2
S6431M
RCA-S6493M
S6431
ctc 1288
dt-2s-n
92C5-27731RI
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Untitled
Abstract: No abstract text available
Text: 3 AMP AXIAL LEAD DIFFUSED SILICON RECTIFIERS 100A and 200A peak surge current Controlled avalanche series has 250V, 450V, 650V and 850V min. avalanche voltages VBR Non-controlled avalanche series with 50V, 100V, 200V, 400V, 600V, 800V and 1000V (VRRM) Fast recovery series with 200 nanosec.
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V3510
V350X
V351X
V352X
V354X
V356X
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2N3670
Abstract: scr 2n3668 scr silicon controlled rectifiers 2N3668-2N3670 scr 2N3669 2N3669 2N4103 2N3688 scr RCA 2N3670 ta2621
Text: fi E SOLI» STATE "Üb 3 8 7 5 0 8 1 G E S O L ID S T A T E Silicon Controlled Rectifiers- dF 01E | 3 fl7 5 []fll D 01 7 k f l 4 17684 2N3668-2N3670, 2N4103 File Num ber 12.5-A Silicon Controlled Rectifiers 116 TERMINAL DESIGNATIONS For Low-Cost Power-Control and Power-Switching
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3fl75[
D017kfl4
2N3668-2N3670,
2N4103
2N3668*
2N3669*
2N3670*
2N4103*
2N3670
scr 2n3668
scr silicon controlled rectifiers
2N3668-2N3670
scr 2N3669
2N3669
2N4103
2N3688
scr RCA 2N3670
ta2621
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c49b
Abstract: C49M10 C492 C49B10 C49A10 C49A20 C49B20 C49C10 C49C20 C49D10
Text: HIGH SPEED Silicon Controlled Rectifier I. 600 VOLTS C49 3 110 A RMS The General Electric C49 Silicon Controlled Rectifier is an all-diffused device designed for power switching at high frequencies. F EA TU R ES: • • • • Fully characterized for operation in inverter and chopper applications.
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C49--2
c49b
C49M10
C492
C49B10
C49A10
C49A20
C49B20
C49C10
C49C20
C49D10
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V3510
Abstract: No abstract text available
Text: MICRO QUALITY / S E M ICO ND UC TO R , INC. 3 Amp Diffused Silicon Epoxy Rectifiers with 200 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings
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XXt02
V3510
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V334X
Abstract: V330X v330
Text: MICRO QUALITY / SE M ICO ND UC TO R , INC. 3 Amp Diffused Silicon Epoxy Rectifiers with 100 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 50V, 100V, 200V, 400V, 600V, 800V, and 1000V V RRM Ratings
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V3310
V330X
V331X
V332X
V334X
V336X
v330
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SCR firing inverter circuit
Abstract: types of scr packages scr specifications cehco how to check scr scr gate triggring circuit scr 1000 amps SCR Inverter 350CR SCR A281D
Text: 4537491 HOLMES CARL E CO ^ 4 D E § 45374^1 0000034 7 94D 0 0 0 3 4 D T - ¿ Silicon Controlled Rectifiers Silicon Controlled Rectifiers (SCR’s) are used primarily to control the flow of electrical current in much the same way that potentiometers and relays are used.
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GD0DD34
The150
V4-28
SCR firing inverter circuit
types of scr packages
scr specifications
cehco
how to check scr
scr gate triggring circuit
scr 1000 amps
SCR Inverter
350CR SCR
A281D
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scr 2N3525
Abstract: RCA 2N3525 2N3525 2N4101 2N3228 TA1225 TA2773 TAT222
Text: G E SOLI » STAT E 3 875081 G E SOL ID S T A T E _ • File Num ber 114 01E 17669 D Silicon Controlled Rectifier* 2N3228, 2N3525, 2N4101 5-A Silicon Controlled Rectifiers TERM,K For Low -C ost Pow er-C ontrol and Pow er-Sw itching Applications
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2N3228,
2N3525,
2N4101
O-213AA
2N3228*
2N3525"
2N4101'
2N4101
scr 2N3525
RCA 2N3525
2N3525
2N3228
TA1225
TA2773
TAT222
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MCR2301
Abstract: mcr230 mcr231 MCR230F
Text: Silico n Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consum er applications such as power supplies, battery chargers, temperature, motor, light and welder controls. MCR230, 231 MCR230 3, 231( )3 C232, 233 Series
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MCR230,
MCR230(
MCR2301
mcr230
mcr231
MCR230F
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2N6404 RCA
Abstract: No abstract text available
Text: Üï G E SOLID STATE 3875081 G E S O L ID File Number dËTJ 01E STATE 3Ô7SDÔ1 0 0 1 7 1 ^ 1 17699 D t - z S - t f _ Silicon Controlled Rectifiers 2N6400—2N6404 892 16-A Silicon Controlled Rectifiers TERMINAL DESIGNATIONS For Power Switching, Power Control, and
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2N6400--2N6404
TQ-220AB
2N6404,
92CS-I3
2N6404 RCA
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Untitled
Abstract: No abstract text available
Text: NEC jxPD17204 4-BIT SINGLE-CHIP M ICROCO NTRO LLER The *lPD17204 is a 4-bit C M O S microcontroller with an 8 K-bit RAM , a 3-channel timer, a remote controlled carrier generator, a remote controlled receive signal amplifier and a waveform rectifier integrated on a single-chip for infrared remote
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jxPD17204
lPD17204
16-bit
52-pin
iPD17000
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DV 3287 C
Abstract: 2N2574 MCR729-10 MCR729-5 300 Amps power TR Motorola mcr729
Text: M O T O R O L A SC D IODES/OPTO S5E D • b 3 b 7 5 S S DQâllti? Q ■ T - I S - I S MCR649APt-m Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . fast switching, high-voltage Silicon Controlled Rectifiers especially designed for pulse modulator applications in radar and other similar equipment.
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b3ta75ss
MCR649AP1-10
2N2574)
MCR729-5
MCR729-10
105aC
30Amps)
DV 3287 C
2N2574
MCR729-10
MCR729-5
300 Amps power TR
Motorola mcr729
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E • D ^ 5 3 ^ 3 1 QQStibMM 0fl2 BAPX BYM56 SfcKlfcS _A _ CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable of absorbing reverse transients.
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BYM56
BYM56A
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