Untitled
Abstract: No abstract text available
Text: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2R
APT50GT120LR
50KHz
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Regulated Power Supply Schematic Diagram
Abstract: CHP1230-PM CHP1230-PM-0000 CHP1230-PM-000T
Text: CHP1230-PM TM 1.75 to 1.78 GHz 3.2V, 28.0 dBm, Korea PCS InGaP HBT Module Advanced Product Information April 2000 1 of 4 Features ❏ InGaP HBT Technology ❏ 6mm Square, 50 Ohm Power Module ❏ Single Positive Supply ❏ Operation as Low as 3.2V ❏ 35% Linear Power Added Efficiency
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CHP1230-PM
CHP1230-PM
Regulated Power Supply Schematic Diagram
CHP1230-PM-0000
CHP1230-PM-000T
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L9907N
Abstract: L9907ND SO20L headlight motor
Text: L9907N MOTOR BRIDGE FOR HEADLIGHT ADJUSTMENT FULL BRIDGE OUTPUT CONFIGURATION WITH LOW SATURATION VOLTAGE LESS THAN 3.2V AT OUTPUT CURRENT 0.7A OPERATING SUPPLY VOLTAGE RANGE 7V TO 18V. SUPPLY OVERVOLTAGE UP TO 50V HIGH POSITIONING PRECISION AND HIGH NOISE IMMUNITY DUE TO TRANSFER
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L9907N
MIL883C
SO20L
L9907ND
SO20L)
L9907N
L9907ND
headlight motor
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Untitled
Abstract: No abstract text available
Text: RT9177/A Preliminary Ultra-Low-Noise 200mA/500mA LDO Regulator General Description Features The RT9177/A is a 200mA/500mA low dropout and low noise micro-power regulator suitable for portable RF applications. The output voltage accuracy is within ±2% and range from 2.4V to 3.2V in 100mV increments could
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RT9177/A
200mA/500mA
RT9177/A
100mV
protect06
OT-23-5
DS9177/A-11
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Untitled
Abstract: No abstract text available
Text: RT9177/A Preliminary Ultra-Low-Noise 200mA/500mA LDO Regulator General Description Features The RT9177/A is a 200mA/500mA low dropout and low noise micro-power regulator suitable for portable RF applications. The output voltage accuracy is within ±2% and range from 2.4V to 3.2V in 100mV increments could
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RT9177/A
200mA/500mA
RT9177/A
100mV
OT-23-5
DS9177/A-12
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IXBF20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF20N300
20N300
1-23-09-A
IXBF20N300
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IXYH82N120C3
Abstract: DS100335
Text: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYH82N120C3
IC110
O-247
062in.
82N120C3
IXYH82N120C3
DS100335
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bv 038-5193.0
Abstract: BV 038-5081.0 F EI38 038-5190-0 2x15 038-5049.0 BV 038-5216.0 F 038-5351.0 en61558 E113449
Text: LAMINATED TRANSFORMERS Type EI38 / 13.6 - 3.2VA AGENCY APPROVALS 9.20 1 038-5187.0 1/3* 9 / 356 13.95 1 038-5190.0 1/3* 3. EN61558 230 12 / 267 17.80 1 038-5193.0 1/3* 230 15 / 214 22.20 1 038-5196.0 1/3* 230 18 / 178 27.00 1 038-5199.0 1/3* 230 24 / 134 35.00
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E113449
EN61558
2x115
LT2007
bv 038-5193.0
BV 038-5081.0 F
EI38
038-5190-0
2x15
038-5049.0
BV 038-5216.0 F
038-5351.0
en61558
E113449
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Untitled
Abstract: No abstract text available
Text: Micropower Step-Up/Step-Down Fixed 3.3 V, 5 V, 12 V, Adjustable High Frequency Switching Regulator ADP3000 FEATURES SET 1.245V REFERENCE DRIVER COMPARATOR ADP3000 R2 GND SW2 00122-001 R1 SENSE Figure 1. VIN 2V TO 3.2V 6.8µH 100µF 10V IN5817 3.3V 180mA 120V
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ADP3000
IN5817
180mA
ADP3000-3
C00122â
14-lead
RU-14
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GAL-5
Abstract: No abstract text available
Text: PBL 4032001 05 January PBL 403 05 Multiband GSM Power Amplifier Description. Key features. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or
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GSM900
DCS1800
PCS1900
QSOP28
GSM900,
1522-PBL
S-164
GAL-5
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4TPB100M
Abstract: GMK325BJ225MN LT1934 LT1934-1 MBR0540 LCFZ
Text: LT1934/LT1934-1 Micropower Step-Down Switching Regulators in ThinSOT and DFN U FEATURES DESCRIPTIO • Wide Input Voltage Range: 3.2V to 34V Micropower Operation: IQ = 12µA 5V at 250mA from 6.5V to 34V Input LT1934 5V at 60mA from 6.5V to 34V Input (LT1934-1)
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LT1934/LT1934-1
400mA
LT1934
LTC3411
LTC3412
TSSOP16E
LTC3430
200kHz,
1934fb
4TPB100M
GMK325BJ225MN
LT1934-1
MBR0540
LCFZ
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rf6505
Abstract: DIVERSITY MODULE MURATA RF6505PCK-410 DP2T
Text: RF6505 3.2V TO 4.2V, 2.4GHz FRONT END MODULE 18 17 ANT2_EN 19 ANT1_EN LNA_EN 20 VCCLNA RX_EN Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.55mm 16 Features 15 ANT2 GND 2 14 GND RFP 3 13 ANT1 VCC 4 12 GND TX_EN 5 11 N/C ZigBee 802.15.4 Based Systems for Remote
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RF6505
20-Pin,
27dBm
11b/g
RF6505
DS111110
DIVERSITY MODULE MURATA
RF6505PCK-410
DP2T
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g4 pc 50 w
Abstract: G2 - 395
Text: Advance Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC90 = 12A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions
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MMIX4B12N300
12N300
1-23-09-A
g4 pc 50 w
G2 - 395
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IXBK55N300
Abstract: IXBX 55N300 IXBX55N300
Text: IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBK55N300
IXBX55N300
IC110
O-264
IC110
PLUS247
100ms
IXBX 55N300
IXBX55N300
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DCS1800
Abstract: MAX2216 MAX2216EBV PCS1900 GSM900 maxim analog design guide 12 3RD
Text: 19-2038; Rev 0; 5/01 KIT ATION EVALU E L B A IL AVA Miniature Chip-Scale GSM900/DCS1800/PCS1900 Power Amplifier Features ♦ Miniature Chip-Scale Package UCSP : 2.5mm ✕ 3.0mm ♦ +34.5dBm Output Power (VCC ≥ +3.2V) ♦ Low Voltage Operation—Down to 2.5V
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GSM900/DCS1800/PCS1900
MAX2216EBV
MAX2216
DCS1800
MAX2216
MAX2216EBV
PCS1900
GSM900
maxim analog design guide 12 3RD
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IC110
IXBH20N300
IXBT20N300
O-247
20N300
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Untitled
Abstract: No abstract text available
Text: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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Original
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APT50GT120B2R
APT50GT120LR
50KHz
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBT20N300HV
IC110
O-268
20N300
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Untitled
Abstract: No abstract text available
Text: TS2023 1A Single Channel USB Power Switch SOT-25 Pin Definition: 1. CTL 2. Ground 3. FLG 4. Input 5. Output General Description The TS2023 is integrated 85mΩ high-side power switch for self-powered and bus-powered Universal Serial Bus USB applications. This switch operates with input ranging from 3.2V to 6.5V, making it ideal for 5V system.
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TS2023
OT-25
TS2023
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5458
Abstract: No abstract text available
Text: PECLF Series 14 Pin DIP PECL Frequency 10k: 5.000 Mhz. To 110 Mhz. 10kH: 50.000 MHz. To 200 MHz. 10E, 100 E: 100 Mhz. To 400 MHz. ‘0’ = +3.57 Vdc Max. , ‘1’ = +4.22 Vdc Min. 50% ± 5% 10kH: 800 ps Typ. 10E: 500ps Typ. 100E: 500ps Typ. 50 Ω to +3.2V or 390 Ω to Vee
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500ps
B100EAA-100
5458
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TSOT23-5
Abstract: CAT808 MO-193 Catalyst Semiconductor 25 CATALYST SEMICONDUCTOR Voltage Detector SOT-89 marking TB MARKING SOT-89
Text: CAT808 Low-Power Precision Voltage Detector FEATURES DESCRIPTION Ultra Low Current Consumption 2.4µA The CAT808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. Voltage detection thresholds between 2.0V and 3.2V are
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CAT808
CAT808
TSOT23-5
MO-193
Catalyst Semiconductor 25
CATALYST SEMICONDUCTOR
Voltage Detector SOT-89 marking
TB MARKING SOT-89
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Untitled
Abstract: No abstract text available
Text: I S 6 2 L V 1 2 8 1 6 ' L "m 128K x 16 CMOS STATIC RAM WITH 2.5V-3.2V SUPPLY FEATURES • High-speed access time: 70,100, and 120 ns • CMOS low power operation — 120 mW typical operating — 6 jiW (typical) CMOS standby • TTL compatible interface levels
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44-pin
IIS62LV12816L
152-bit
IS62LV12816L-70T
IS62LV12816L-100T
IS62LV12816L-120T
IS62LV12816L-70TI
IS62LV12816L-1OOTI
IS62LV12816L-120TI
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cxd1135
Abstract: Sony CXD1135 SM6841 sony cxd1125 0W16 cxd1130 SM5841BS CXD1125 SM5841AS il127
Text: SM5841A/B QJPC 7*4 NIPPON PRECISION CIRCUITS INC. SM5841A/B tè ,NPC tffà É K $|§& L t z ^ 1 ¥~~ h CMOS 'J9 )Vy 4 to p a to SM5841A/B fi, y 7 ^ fcflUE L tz T 4 V 9 )V* - T 4 t W T4 > rffilè<Ditfe. rW itjrjV'T'tx.y V 7 h ^ jt.- h ^ lasflE 3.2V) -ci>i&i^^'nrt^’ei-o
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OCR Scan
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SM5841A/B
SM5841A/B
4535fs
SM5841B
256fs/384fs
SM6841
PCM58P
cxd1135
Sony CXD1135
sony cxd1125
0W16
cxd1130
SM5841BS
CXD1125
SM5841AS
il127
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7k67
Abstract: 4LR61
Text: DURACELI. SIZE 7K67 Alkaline Manganese Dioxide Battery 4LR61 SPECIFICATIONS 9.16 mm Max. 889 mm Min. Min. No Load Voltage 6.2V æ n T - - it1 I |J 9.8 mm Max. 9 6 mm Min. à t h Rated Capacity 500mAh on 1k ß to 3.2V Min. Life 25Hrs on
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4LR61
500mAh
25Hrs
7k67
4LR61
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