Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    300A 1000V DIODE Search Results

    300A 1000V DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    300A 1000V DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Diode B2x

    Abstract: diode 6A 1000v E80276 QM300DY-2H Welder
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original
    QM300DY-2H E80276 E80271 Diode B2x diode 6A 1000v E80276 QM300DY-2H Welder PDF

    E80276

    Abstract: QM300DY-2HB
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original
    QM300DY-2HB E80276 E80271 E80276 QM300DY-2HB PDF

    QM300HA-2H

    Abstract: 1000V 20A transistor QM300HA-2H equivalent E80276 9303C
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original
    QM300HA-2H E80276 E80271 108MAX. 62MAX. 36MAX. QM300HA-2H 1000V 20A transistor QM300HA-2H equivalent E80276 9303C PDF

    1N2054

    Abstract: 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB M16 pinch bolt
    Text: Bulletin I2039 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version Typical Applications Welders Power supplies


    Original
    I2039 70/300U DO-205AB 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB M16 pinch bolt PDF

    1n2054 diode

    Abstract: 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB M16 pinch bolt
    Text: Previous Datasheet Index Next Data Bulletin SheetI2039 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version


    Original
    I2039 70/300U 1n2054 diode 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB M16 pinch bolt PDF

    1N2054

    Abstract: 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB ir 70u 1N405
    Text: Bulletin I2039 11/94 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version Typical Applications Welders


    Original
    I2039 70/300U DO-205AB R4500 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB ir 70u 1N405 PDF

    6550

    Abstract: 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB DIODE 300U 120 C
    Text: Bulletin I2039 11/94 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version Typical Applications Welders


    Original
    I2039 70/300U DO-205AB 6550 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB DIODE 300U 120 C PDF

    DCR840F

    Abstract: DCR840F42 DCR840F44 DCR840F46 DCR840F48
    Text: DCR840F DCR840F Phase Control Thyristor Preliminary Information DS5521-1.1 February 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V ■ High Surge Capability IT AV 840A ITSM 10,000A dVdt* 1000V/µs dI/dt 300A/µs ■ Low Turn-on Losses APPLICATIONS


    Original
    DCR840F DS5521-1 DCR840F48 DCR840F46 DCR840F44 DCR840F42 100mA, DCR840F DCR840F42 DCR840F44 DCR840F46 DCR840F48 PDF

    transistor 1000V 6A

    Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
    Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original
    SQD300AA100 E76102 SQD300AA100 SQD300AA120 transistor 1000V 6A diode 6A 1000v transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts A D E F H J K AK AL AG G Y L 8 9 AQ AJ T M 10 AB (4 PLACES) U N AF (4 PLACES) S AP DETAIL "A" 1 V 2 3


    Original
    CM300DX-34SA Amperes/1700 PDF

    Untitled

    Abstract: No abstract text available
    Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts H A D E F J K AK AL AG G Y L 8 9 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP DETAIL "A" 1 V W R AM


    Original
    CM300DX-34SA Amperes/1700 PDF

    Untitled

    Abstract: No abstract text available
    Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts H A D E F J K AK AL AG G Y L 9 8 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP DETAIL "A" 1 V W R AM


    Original
    CM300DX-34SA Amperes/1700 PDF

    Untitled

    Abstract: No abstract text available
    Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts H A D E F J K G AZ L AK AL AG Y 9 8 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP 11 DETAIL "A" 1 V


    Original
    CM300DX-34SA Amperes/1700 PDF

    S20L

    Abstract: S30L SD1053C sd1053c.s20l 100a 1000v GTO
    Text: Bulletin I2079 rev.A 09/97 SD1053C.L SERIES Hockey Puk Version FAST RECOVERY DIODES Features 920A 1050A High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 3000V High current capability Optimized turn on and turn off characteristics


    Original
    I2079 SD1053C. DO-200AB 000V/us 000V/us, 00A/us S20L S30L SD1053C sd1053c.s20l 100a 1000v GTO PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan
    QM300DY-2H E80276 E80271 PDF

    G016

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES ; QM300DY-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE QM 300DY-2HB { •1C Collector current. 300A • V cex Collector-emitter voltage.1000V • hFE DC current gain. 750 • Insulated Type


    OCR Scan
    QM300DY-2HB 300DY-2HB E80276 E80271 G016 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE Q M 300H A-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan
    QM300HA-2H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE Q M 300DY-2HB • lc Collector current. 300A • Vcex Collector-emitter vo ltag e 1000V • hFE DC current gain. 750 • Insulated Type


    OCR Scan
    QM300DY-2HB 300DY-2HB E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12039 International [K?RjRectifier 70/30ûu R s e rie s STANDARD RECOVERY DIODES Stud Version 250A 300A Features • ■ Alloy diode Peak reverse voltage up to 1000V ■ Popular series for rough service ■ Standard JEDEC types ■ Stud cathode and stud anode version


    OCR Scan
    002bflbB 70/300U 4A5545E PDF

    1N2054

    Abstract: ir 70u KYW 30 40 diode
    Text: Bulletin 12039 International [ïor 70/300U R s e rie s Rectifier STANDARD RECOVERY DIODES Stud Version 250A 300A Features • Alloy diode ■ P e a k reverse voltage up to 1000V ■ P op ular series for rough service ■ S tan dard J E D E C types ■ Stud cathode and stud anode version


    OCR Scan
    70/300U 1N2054 ir 70u KYW 30 40 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: « RURP3070, RURP3080, RURP3090, RURP30100 ¡11995 30A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 110ns JEDEC TQ-220AC ANODE CATHODE • +175°C Rated Junction Temperature CATHODE (FLANGE) • Reverse Voltage Up to 1000V


    OCR Scan
    RURP3070, RURP3080, RURP3090, RURP30100 110ns) TQ-220AC RURP30100 PDF

    RURP3080

    Abstract: transistor 1000V RURP30100
    Text: « H a r r is RURP3070, RURP3080 uu — RURP3090, RURP30100 Decem ber 1993 30A, 700V - 1 000V Ultrafast Diodes Package Features JE D E C TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic tRR< 110ns • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V


    OCR Scan
    RURP3070, RURP3080 RURP3090, RURP30100 110ns) O-220AC P3070, P3080, transistor 1000V RURP30100 PDF

    30100 transistor

    Abstract: RURP3080
    Text: < X | % ms h a r r RURP3070, RURP3080, RURP3090, RURP30100 i s „ . . c o n - u c t o . 30A, 700V - 1000V Ultrafast Diodes April 1 9 9 5 Features Package • Ultrafast with Soft Recovery Characteristic *rr < 110ns JE D E C TO-22QAC ANODE CATHODE • +175°C Rated Junction Temperature


    OCR Scan
    RURP3070, RURP3080, RURP3090, RURP30100 O-22QAC 110ns) RURP30100 30100 transistor RURP3080 PDF

    RUR30100

    Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
    Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns


    OCR Scan
    43D2571 110ns) RUR3070, RUR3080, RUR3090, RUR30100 RUR3080. RUR3090RUR30100 rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V PDF