A2730
Abstract: 64205 3052 mosfet
Text: SPICE Device Model SiE816DF Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiE816DF
S-82057-Rev.
01-Sep-08
A2730
64205
3052 mosfet
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LC5523F
Abstract: 3052 voltage regulator
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup
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LC5523F
SSE-24682
LC5523F
3052 voltage regulator
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3052 voltage regulator
Abstract: LC5523F SANKEN 3052 "Sanken Rectifiers"
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup
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LC5523F
3052 voltage regulator
LC5523F
SANKEN 3052
"Sanken Rectifiers"
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GX-0300-55
Abstract: LTD M250 B07T MRF373R1 MRF373SR1 NI-360S NI-360
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373/D
MRF373R1
MRF373SR1
MRF373R1
GX-0300-55
LTD M250
B07T
MRF373SR1
NI-360S
NI-360
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S-82057
Abstract: A2730
Text: SPICE Device Model SiE816DF Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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PDF
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SiE816DF
18-Jul-08
S-82057
A2730
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thermistor r5t
Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373S
MRF373
31JUL04
31JAN05
thermistor r5t
chip resistor 1206
c19a
S1239
MOTOROLA P
C3B Kemet
bc17a
GX-0300-55
R7B Connector
RO3010
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MOSFET J132
Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373/D
MRF373
MRF373S
MRF373S
MRF373/D
MOSFET J132
mosfet J137
motorola 305
470 860 mhz PCB
GX-0300-55
S1239
M2503
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c19a
Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
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MRF373R1
MRF373SR1
MRF373R1
MRF373/D
c19a
motorola rf power
chip resistor 1206
BUY13
C14A
LDMOS push pull
MRF373
MRF373 PUSH PULL
MRF373SR1
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MRF373
Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373
MRF373S
MRF373)
MRF373
DEVICEMRF373/D
RO3010
A419
MRF373 PUSH PULL
C14A
MRF373 print circuit
P1210
MRF373S
atc 174
BUY13
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MRF373R1
Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373/D
MRF373R1
MRF373SR1
MRF373R1
C19B
C14A
rf push pull mosfet power amplifier
B07T
MRF373SR1
chip resistor 1206
ATC 700 B 101 G P
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Untitled
Abstract: No abstract text available
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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LC5523F
LC5523F-DS
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AN 7062
Abstract: LC5523F
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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LC5523F
LC5523F-DS,
AN 7062
LC5523F
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Untitled
Abstract: No abstract text available
Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit
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LC5525F
LC5525F-DS
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Untitled
Abstract: No abstract text available
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit
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LC5523F
LC5523F-DS
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AN 7062
Abstract: 3052 voltage regulator TO220F-7
Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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LC5525F
LC5525F,
AN 7062
3052 voltage regulator
TO220F-7
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LC5523
Abstract: LC550
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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LC5523F
LC5523F-DS,
LC5523
LC550
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3052 voltage regulator
Abstract: No abstract text available
Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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Original
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PDF
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LC5525F
LC5525F-DS
3052 voltage regulator
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Untitled
Abstract: No abstract text available
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit
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Original
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PDF
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LC5523F
LC5523F-DS
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TO220F-7
Abstract: No abstract text available
Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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Original
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PDF
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LC5525F
LC5525F,
TO220F-7
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Untitled
Abstract: No abstract text available
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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Original
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PDF
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LC5523F
LC5523F-DS
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Untitled
Abstract: No abstract text available
Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit
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Original
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PDF
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LC5525F
LC5525F-DS
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AN 7062
Abstract: No abstract text available
Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during
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Original
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PDF
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LC5523F
LC5523F-DS
AN 7062
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irl120
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9130L
MRF9130LR3
MRF9130LSR3
irl120
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Untitled
Abstract: No abstract text available
Text: LC5540LF Series Single-Stage Power Factor Corrected Off-Line Switching Regulator ICs Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup
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LC5540LF
LC5540LF-DS
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