Untitled
Abstract: No abstract text available
Text: User's Guide SLVU234 – February 2008 TPS6227xEVM-306 The TPS6227xEVM-306 user’s guide describes the characteristics, operation, and use of the TPS6227xEVM-306 evaluation module EVM . This EVM demonstrates the Texas Instruments TPS62270, a 2.25 MHz, synchronous step-down converter that provides up to 400 mA of output current. See the
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SLVU234
TPS6227xEVM-306
TPS6227xEVM-306
TPS62270,
TPS62270
SLVS799)
400-mA
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2SC4137
Abstract: 2SC4713K 2SC4774
Text: Transistors 2SC4137 2SC4774 / 2SC4713K 96-718-C110 (96-183-C115) 306
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2SC4137
2SC4774
2SC4713K
96-718-C1
96-183-C1
2SC4137
2SC4713K
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710 comparator
Abstract: RS 305-636 rs 306-011 positive negative voltage regulator variable
Text: Issued March 1997 232-2201 Data Pack J Dual regulators Data Sheet RS stock numbers 305-636, 306-011 Two monolithic regulators in D.I.L. packages fixed or variable complementary outputs. Variable RS stock no. 306-011 Absolute maximum ratings at TAMB 25°C Input voltage _±35 V
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900mW
100mA
710 comparator
RS 305-636
rs 306-011
positive negative voltage regulator variable
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710 comparator
Abstract: RS 305-636 positive negative voltage regulator variable
Text: Issued March 1988 002-040 Data Pack J Dual regulators Data Sheet RS stock numbers 305-636, 306-011 Two monolithic regulators in D.I.L. packages fixed or variable complementary outputs. Variable RS stock no. 306-011 Absolute maximum ratings at TAMB 25°C Input voltage _±35 V
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900mW
100mA
710 comparator
RS 305-636
positive negative voltage regulator variable
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SSM3J317
Abstract: SSM3J317T
Text: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)
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SSM3J317T
SSM3J317
SSM3J317T
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Untitled
Abstract: No abstract text available
Text: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)
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SSM3J317T
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antenna mtbf
Abstract: No abstract text available
Text: NFC Adapter Programmable Hardware User Manual Version 1.3 Contact Bluetechnix Mechatronische Systeme GmbH Waidhausenstraße 3/19 A-1140 Vienna AUSTRIA [email protected] http://www.bluetechnix.com Document No.: 900-306 / A Date: 2013-05-22 Bluetechnix 2012
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306-803
Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636
Text: Issued November 1983 J2983 Electronic attenuator Stocknumber 306-803 A silicon monolithic gain controlled A.C. amplifier programmed by an external D.C voltage or resistor. Applications include remote volume controls, speech compressors and expandor circuits. The device is
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J2983
100mV
2N3819
306-803
2N3819 application
741 opamp
2N3819 Application Note
transistor 2N3819
opamp 741
RS 305-636
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Untitled
Abstract: No abstract text available
Text: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: [email protected] b PHOTO TRANSISTOR 光 電 晶 體 Rev: A Date: 2002/10/19 GH-306 Series Electro-Optical Characteristics: Code for parts Material GH-XXXXX Rise Time Fall Time BVceo Min V TN2469TK-06E
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GH-306
TN2469TK-06E
008inch)
000pcs)
350mm
300mm
105mm)
360mm
320mm
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SSM6J205FE
Abstract: No abstract text available
Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)
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SSM6J205FE
SSM6J205FE
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SSM6J205FE
Abstract: M3002
Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)
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SSM6J205FE
SSM6J205FE
M3002
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SSM6J205FE
Abstract: No abstract text available
Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)
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SSM6J205FE
SSM6J205FE
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710 comparator
Abstract: RS 305-636
Text: Issued March 1988 J2040 Dualregulators S tock numbers 305-636, 306-011 Two monolithic regulators in D.I.L. packages fixed or variable complementary outputs. Pin-out diagrams Features l l l l l Output currents up to 100mA Internal current limiting Thermal shutdown feature
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J2040
100mA
600mW
900mW
8-30V)
710 comparator
RS 305-636
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SSM6J205FE
Abstract: No abstract text available
Text: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)
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SSM6J205FE
SSM6J205FE
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BF208
Abstract: 8K*8 sram 70V7278 70V7288 70V7339 70V7519 70V7599 AN-306 5646 BC256
Text: BANK-SWITCHABLE APPLICATION DUAL-PORTS' NOTE FREQUENTLY ASKED QUESTIONS AN-306 What is a bank-switchable dualport? A bank-switchable dual-port or BSDP is an innovative multi-port memory solution that allows simultaneous access to common memory from two separate ports at
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AN-306
BF-208)
BC256)
DR-208)
BF208
8K*8 sram
70V7278
70V7288
70V7339
70V7519
70V7599
AN-306
5646
BC256
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Untitled
Abstract: No abstract text available
Text: Photointerrupter Product Data Sheet LTH-306-02 Spec No.: DS-55-93-0004 Effective Date: 08/05/2002 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTH-306-02
DS-55-93-0004
BNS-OD-FC001/A4
LTH-306-02
BNS-OD-C131/A4
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587-894
Abstract: bcd 7 segment common anode logic diagram of ic 7475 ZN1040E pin diagram of ic 7475 D latch 18 pin 7 segment display ic three digit 7 SEGMENT DISPLAY simple circuit 7 segment common anode mpx 0 to 99 led display using two 7 segment displays pin diagram of ic 7475
Text: Issued March 1997 232-2239 Data Pack H Count display ic ZN1040E Data Sheet RS stock numbers 306-285 The ZN1040 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. The bipolar device
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ZN1040E
ZN1040
100mA
587-894
bcd 7 segment common anode
logic diagram of ic 7475
ZN1040E
pin diagram of ic 7475 D latch
18 pin 7 segment display ic three digit
7 SEGMENT DISPLAY simple circuit
7 segment common anode mpx
0 to 99 led display using two 7 segment displays
pin diagram of ic 7475
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH LITEM ï LTH-306-03W1/LTH-306-06W1/LTH-306-07W1/ LTH-301-25W1/LTH-301-25W2/LTH-301-26W1 FEATURE .S n a p m ounting. .M e c h a n ic a l switch rep lacem ent. •W ire or c onn ector for electrical connection. •C u s to m ize d lever a rm can be design ed for specifically
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LTH-306-03W1/LTH-306-06W1/LTH-306-07W1/
LTH-301-25W1/LTH-301-25W2/LTH-301-26W1
LTH-306-03W1
LTH-306-06W1
LTH-301-26W1
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Untitled
Abstract: No abstract text available
Text: vm . VCO-306 Voltage Controlled Oscillator 400-800 MHz GUARANTEED MINIMUM PERFORMANCE DATA 50 ohm System Test Condition: D.C. Power Tuning Range Power Output Frequency Pushing Frequency Pulling DESCRIPTION The VCO-306 Voltage Controlled Oscillator* combines film circuit technology with a custom,
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VCO-306
VCO-306
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306 transistor
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH FEATURE %& * •M echanical sw itch replacem ent .F o r direct PC board or du al-in -lin e socket m ounting •C u stom ized lever arm can be designed for specific application DESCRIPTION The LT H -306 -08 /LT H -306 -09 consists o f a G alliu m A rsenide
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LTH-306-08/LTH-306-09
LTH-306-09
LTH-306-08
306 transistor
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h 301 a
Abstract: LTH301 LTH-301-23 LTH-301-07 LTH-301-05 CRD Diode 20mA LTH-301 30602
Text: LITEM ? » -i -i« * SLOTTED OPTICAL SWITCH LTH-301A/LTH-301-05/LTH-301-07/LTH-301 -19/LTH-301 -23/ LTH-306-01/LTH-306-02 >a - T* - FEATURE •Non-contact switching. •F o r direct P C board or du al-in-line socket m ounting • F a s t switching speed. II
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LTH-301A/LTH-301-05/LTH-301-07/LTH-301
-19/LTH-301
LTH-306-01/LTH-306-02
LTH-30iyLTH-306
LTH-301
h 301 a
LTH301
LTH-301-23
LTH-301-07
LTH-301-05
CRD Diode 20mA
30602
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Untitled
Abstract: No abstract text available
Text: LITEM il SLOTTED OPTICAL SWITCH LTH-301-20/LTH-301-24/LTH-306-04 FEATURE •N o n-co ntact sw itching •F o r direct PC board or du al-in-line socket m ounting • Fast sw itching speed DESCRIPTION The LTH-306-01 series consists of a G allium A rsenide infrdrared em itting diode and a NPN silicon phototransistor
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LTH-301-20/LTH-301-24/LTH-306-04
LTH-306-01
LTH-301
LTH-301-20
LTH-306-04
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TSHA3400
Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Text: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538
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SEP8505/8525
SEP8506/8526
SEP8405/8425
SEP8406/8426
SEP8403
HOA708
HOA0860
HOA0870
LTR-209
LTR-301
TSHA3400
"Photo Interrupter" sharp
306 transistor
Infrared emitter
TELEFUNKEN infrared
"Photo Interrupter"
380 transistor
LTR-536AD
LTE-302-M
LTE5238A
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BF759
Abstract: BF758 BF757 BD417 BD420 BF460 BF762 BF468 MOTOROLA BF761 BF787
Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-202AC Package CASE 306-04 PLASTIC STYLE 1: PIN 1. 2. 3. 4. EMITTER BASE COLLECTOR COLLECTOR R esistive Switching lcCont V c E O (sus) Am ps Max Volts Min 0.1 250 BF787 300 BF788 0.5 1 2 Device Type NPN ts
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O-202AC
BF787
BF790
BF788
BF791
BF789
BF792
BF460
BF757
BF463
BF759
BF758
BD417
BD420
BF762
BF468 MOTOROLA
BF761
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