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    ADS 10 diode

    Abstract: ADS-51V-1000
    Text: ADS-51V-1000 31 dB DIGITAL ATTENUATOR 50 to 1500 MHz / 0 to 31 dB Attenuation / Monotonic / 5-Bit Direct TTL Drive / +5V Supply V Package Outline - 24 pin Dual In Line GENERAL SPECIFICATIONS TRUTH TABLE Attenuation Setting, dB Reference 1 2 4 8 16 Frequency Range:


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    PDF ADS-51V-1000 30Apr96 ADS 10 diode ADS-51V-1000

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


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    PDF Si9434DY Si9424DY S-47586--Rev. 30-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Mixed-Signal ASICs Introduction The mixed signal ASIC, as its name implies, combines elements of the analog world and the digital world into one customized IC. The ability to combine analog functions of all levels of complexity onto the same chip as the more


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    PDF 31-Jan-96

    AUM-25A

    Abstract: MIL-E-5400 AUMP-25A AUMP-25AKX AUMP-25ATX EL FLAT PANEL
    Text: AUM & AUMP-25A MICROWAVE ATTENUATORS 0.5 to 12 GHz / 0 to 30 dB / Ferrite / Excellent Temperature Stability / MIL-E-5400 Class 3 / SMA PRINCIPAL SPECIFICATIONS Model Number Mechanical Configuration AUM-25A AUMP-25A AUMP-25AKX AUMP-25ATX GENERAL SPECIFICATIONS


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    PDF AUMP-25A MIL-E-5400 AUM-25A AUMP-25AKX AUMP-25ATX AUM/AUMP-25A 05Mar96 AUM-25A AUMP-25A AUMP-25AKX AUMP-25ATX EL FLAT PANEL

    Si9934DY

    Abstract: P-channel power mosfet SO-8 Si6943DQ Si9933DY S-47590
    Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ


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    PDF Si9933DY Si9934DY Si6943DQ S-47590--Rev. 30-Apr-96 P-channel power mosfet SO-8 S-47590

    MS-4075

    Abstract: Si6943DQ Si9933DY Si9934DY
    Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ


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    PDF Si9933DY Si9934DY Si6943DQ S-47590--Rev. 30-Apr-96 MS-4075

    AU-15AMN

    Abstract: AU-15ASN AU-15ASX AUP-15AKN MIL-E-5400 Class 2
    Text: AU & AUP-15A Series MICROWAVE ATTENUATORS 2 to 8 GHz / 0 to 15 dB / Ferrite / Excellent Temperature Stability / MIL-E-5400 Class 3 / SMA & N PRINCIPAL SPECIFICATIONS Model Number Mechanical Configuration AU-15AMN AU-15ASN AU-15ASX AUP-15AKN AUP-15ASN Micrometer Drive


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    PDF AUP-15A MIL-E-5400 AU-15AMN AU-15ASN AU-15ASX AUP-15AKN AUP-15ASN 27Feb96 AU-15AMN AU-15ASN AU-15ASX AUP-15AKN MIL-E-5400 Class 2

    Si6943DQ

    Abstract: Si9933DY Si9934DY MS-4075
    Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1 S2 SO-8


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    PDF Si9933DY Si9934DY Si6943DQ S-47590--Rev. 30-Apr-96 MS-4075

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


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    PDF Si9434DY Si9424DY S-47586--Rev. 30-Apr-96

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


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    PDF Si9434DY Si9424DY S-47586--Rev. 30-Apr-96

    VDS16

    Abstract: D-16 Si6943DQ Si9934DY 5121 M
    Text: Tem ic SÌ9933DY S e m i c o n d u c t o r s Dual P-Channel Enhancement-Mode MOSFET Product Summary VDs V -20 r DS(on) (£2) I d (A) 0.11 @ VGs = -+-5 v ±3.4 0.15 @VGS =-3.0 V ±2.9 0.19 @ VGs = -2.7 V ±2.6 Recommended upgrade: Si9934DY Lower profile/smaller size— see LITE FOOT equivalent: Si6943DQ


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    PDF 9933dy Si9934DY Si6943DQ S-47590â 30-Apr-96 25473S DD17flflti VDS16 D-16 5121 M

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. IS RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC FT ALL RIGHTS RESERVED. 1 5. 8 8 +0 . 25[. 625+ . 01 0] D REVISIONS DIST LTR 0. 7 9 [.031] DESCRIPTION DATE DUN APVD REDRAWN W/0 CHANGE PER EC 0020-292-96


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    PDF Q-N-290 23FEB95 30-APR-96 amp40973 /home/ssrv026d/dsk01 /dept4023/amp40973/edmiriod