SiRA10DP
Abstract: No abstract text available
Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8
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SiRA10DP
SiRA10DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8
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SiRA10DP
SiRA10DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR316DP
2002/95/EC
SiR316DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR428DP
2002/95/EC
SIR428DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8
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SiRA10DP
SiRA10DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8
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SiRA10DP
SiRA10DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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SiR316DP
2002/95/EC
SiR316DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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SiR316DP
2002/95/EC
SiR316DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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1093 SO-8
Abstract: SIR428DP-T1-GE3 SO8 1093 SiR428DP
Text: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR428DP
2002/95/EC
SIR428DP-T1-GE3
18-Jul-08
1093 SO-8
SIR428DP-T1-GE3
SO8 1093
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Untitled
Abstract: No abstract text available
Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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SiR316DP
2002/95/EC
SiR316DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SIS468DN-T1-GE3
Abstract: No abstract text available
Text: SiS468DN Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) ID (A)f 0.0195 at VGS = 10 V 30g 0.0210 at VGS = 7.5 V 30g 0.0320 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm
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SiS468DN
SiS468DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiS468DN Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) ID (A)f 0.0195 at VGS = 10 V 30g 0.0210 at VGS = 7.5 V 30g 0.0320 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm
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SiS468DN
SiS468DN-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm
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SiS890DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm
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SiS890DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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S1209
Abstract: SiS890DN
Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm
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SiS890DN
SiS890DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S1209
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Untitled
Abstract: No abstract text available
Text: SiS468DN Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) ID (A)f 0.0195 at VGS = 10 V 30g 0.0210 at VGS = 7.5 V 30g 0.0320 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm
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SiS468DN
SiS468DN-T1-emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm
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SiS890DN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Common mode SC Coils – Small Type SC-G/GS Type [RoHS [RoHS Compliant] Compliant] Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G
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SC-01-06G
SC-01-10G
SC-01-20G
SC-01-30G
SC-01-50G
SC-01-80G
SC-01-E100G
SC-01-E121G
SC-01-E150G
SC-02-06G
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sc-01-e100g
Abstract: SC-01-20G
Text: Common mode SC Coils – Small Type SC-G/GS Type [RoHS [RoHS Compliant] Compliant] Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G
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SC-01-06G
SC-01-10G
SC-01-20G
SC-01-30G
SC-01-50G
SC-01-80G
SC-01-E100G
SC-01-E121G
SC-01-E150G
SC-02-06G
sc-01-e100g
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KC547
Abstract: sc-01-e100g SC-03-06G
Text: Common mode SC Coils – Small Type SC-G/GS Type [RoHS [RoHS Compliant] Compliant] Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G
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SC-01-06G
SC-01-10G
SC-01-20G
SC-01-30G
SC-01-50G
SC-01-80G
SC-01-E100G
SC-01-E121G
SC-01-E150G
SC-02-06G
KC547
sc-01-e100g
SC-03-06G
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Untitled
Abstract: No abstract text available
Text: Common mode SC Coil – Small Type SC-G/GS Types Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G SC-01-10GS SC-01-20GS SC-02-10GS
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SC-01-06G
SC-01-10G
SC-01-20G
SC-01-30G
SC-01-50G
SC-01-80G
SC-01-E100G
SC-01-E121G
SC-01-E150G
SC-02-06G
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30GWJ2CZ47C
Abstract: No abstract text available
Text: TOSHIBA 30GWJ2CZ47C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30G W J 2 C Z 4 7 C Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION 10.3M AX. 0 3.2 ± 0.2 • Repetitive Peak Reverse Voltage : Vrrm = 40V
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30GWJ2CZ47C
500ns,
-VD-40V-^
30GWJ2CZ47C
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HJ3H
Abstract: 30GWJ2CZ47 30GWJ2CZ47C
Text: TOSHIBA 30GWJ2CZ47C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30G W J 2 C Z 4 7 C Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION 10.3M AX. 0 3.2 ± 0.2 SI • Repetitive Peak Reverse Voltage : V rrm = 40V
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OCR Scan
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PDF
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30GWJ2CZ47C
WJ2CZ47C
500ns,
961001EAA2'
HJ3H
30GWJ2CZ47
30GWJ2CZ47C
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1216D
Abstract: 30GWJ2C 30GWJ2C42C
Text: TOSHIBA 30GWJ2C42C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30G W J 2 C 4 2 C Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION 15.9 MAX. • Repetitive Peak Reverse Voltage : V rrm = 40V • Average Output Rectified Current : Iq = 30A
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30GWJ2C42C
WJ2C42C
500ns,
961001EAA2'
1216D
30GWJ2C
30GWJ2C42C
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