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    10146514-10030MLF Amphenol Communications Solutions PCI Express®x1 vertical Card Edge Connector, 36 Positions, 1mm (0.039inch) Pitch Visit Amphenol Communications Solutions
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    Nexperia PSMN1R8-30MLHX

    MOSFET N-CH 30V 150A LFPAK33
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    DigiKey PSMN1R8-30MLHX Cut Tape 20,962 1
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    PSMN1R8-30MLHX Reel 18,000 1,500
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    Mouser Electronics PSMN1R8-30MLHX 4,998
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    Littelfuse Inc V30MLA0603NT

    VARISTOR 41.5V 30A 0603
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    DigiKey V30MLA0603NT Cut Tape 9,990 1
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    V30MLA0603NT Digi-Reel 9,990 1
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    Ozdisan Elektronik V30MLA0603NT
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    YAGEO Corporation RC1206JR-0730ML

    RES 30M OHM 5% 1/4W 1206
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    DigiKey RC1206JR-0730ML Cut Tape 9,845 1
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    RC1206JR-0730ML Digi-Reel 9,845 1
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    RC1206JR-0730ML Reel 5,000 5,000
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    Chip1Stop RC1206JR-0730ML Cut Tape 36
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    Ozdisan Elektronik RC1206JR-0730ML
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    Nexperia PSMN4R2-30MLDX

    MOSFET N-CH 30V 70A LFPAK33
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    DigiKey PSMN4R2-30MLDX Cut Tape 3,448 1
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    PSMN4R2-30MLDX Digi-Reel 3,448 1
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    PSMN4R2-30MLDX Reel 3,000 1,500
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    Mouser Electronics PSMN4R2-30MLDX 23,824
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    Avnet Silica PSMN4R2-30MLDX 10,500 12 Weeks 1,500
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    EBV Elektronik PSMN4R2-30MLDX 18,000 12 Weeks 1,500
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    Bourns Inc SDR1806-330ML

    FIXED IND 33UH 3A 68 MOHM SMD
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    DigiKey SDR1806-330ML Reel 2,000 250
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    Newark SDR1806-330ML Cut Tape 729 1
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    RS SDR1806-330ML Bulk 18 Weeks 750
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    30ML Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot1210

    Abstract: PSMN3R0-30MLC
    Text: PA K 33 PSMN3R0-30MLC LF N-channel 30 V 3.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 — 22 May 2012 Objective data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


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    PSMN3R0-30MLC LFPAK33 sot1210 PSMN3R0-30MLC PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN6R4-30MLD LFPAK33 LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN2R4-30MLD LFPAK33 LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 12 March 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN7R5-30MLD LFPAK33 LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R4-30MLD LFPAK33 LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN6R5-30MLD N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN6R5-30MLD LFPAK33 LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN020-30MLC LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 15 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R4-30MLD LFPAK33 LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN6R5-30MLD N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN6R5-30MLD LFPAK33 LFPAK33 PDF

    7d530l

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN7R5-30MLD LFPAK33 LFPAK33 7d530l PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN4R2-30MLD LFPAK33 LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: PA K 33 PSMN013-30MLC LF N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


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    PSMN013-30MLC LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: PA K 33 PSMN4R4-30MLC LF N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


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    PSMN4R4-30MLC LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN2R4-30MLD LFPAK33 LFPAK33 PDF

    2D430L

    Abstract: 2D430
    Text: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original
    PSMN2R4-30MLD LFPAK33 LFPAK33 2D430L 2D430 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN010-30MLD N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 10 October 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN010-30MLD LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN010-30MLD N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PSMN010-30MLD LFPAK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 I IB : I File No. LH7E-MJ1B I SHEET 1 o ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohm s Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 94V —0, Contact :Phosphor Bonze Or B rass


    OCR Scan
    30Mllliohm 5000M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 ~5- I — File No. LH7E-MJ1B-BGB r SHEET 1 / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute C ontact Resistance:30Mllliohms Max. Insulator Resistance:5000Megohms Min. lnsulator:PBT+30% Glass Riled UL 94V—0 C ontact ¡Phosphor Bonze Or Brass


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    30Mllliohms 5000Megohms PDF

    2.5mm stereo jack SMT

    Abstract: stereo jack 2.5mm
    Text: co co o 1 02.60 Materials and Finish Housing: LCP reflow compatible , UL 94V-0 Rated CO o s Terminals: Copper Alloy, Gold Flash all over Nickel Plating 10 c\i Tm 0> Electrical Characteristics 8 Contact Resistance: Before Test: 30mllliohms Max. After Durability Test:


    OCR Scan
    30milllohms 2002/95/EC LR78160 STX-2550-4NTR 2.5mm stereo jack SMT stereo jack 2.5mm PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 I s : i File No. LH7E-MJ1B I SHEET 1 o ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohm s Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 94V —0, Contact :Phosphor Bonze Or B rass


    OCR Scan
    30Mllliohm 5000M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 I IB : I File No. LH7E-MJ1B I SHEET 1 o ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohm s Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 94V —0, Contact :Phosphor Bonze Or B rass


    OCR Scan
    30Mllliohm 5000M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 I I ~ ~ B - File No. LH7E-MJ1B SHEET o 1 ~ / SPECIFICATIONS: Current Rating: 3A AMP Dielectric Voltage:500V AC For 1 Minute Contact Resistance:30Mllliohms Max. Insulator Resistance:5000M egohm s Min. lnsulator:PBT+30% Glass Filled UL 9 4 V —0,Color:Black


    OCR Scan
    30Mllliohms 5000M PDF

    2.5mm stereo jack SMT

    Abstract: stereo jack 2.5mm
    Text: co CO M aterials a n d Finish O 1 0> Housing: LCP reflow compatible , UL 94V-0 Rated 02.60 ''" S 00 O Terminals: Copper Alloy, Gold Flash all over Nickel Plating S 10 CN v10 0> Electrical Characteristics Contact Resistance: 5 Before Test: 30mllllohms Max.


    OCR Scan
    30milliohms 2002/95/EC LR78160 STX-2550-3NMTR 2.5mm stereo jack SMT stereo jack 2.5mm PDF