30N120 Search Results

30N120 Price and Stock

Filter by Manufacturer


onsemi NVBG030N120M3S SILICON CARBIDE (SIC) MOSFET - E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVBG030N120M3S	Digi-Reel	740		1	1 $22.43 10 $16.81 100 $22.43 1000 $22.43 10000 $22.43	Buy Now
	NVBG030N120M3S	Cut Tape	740		1	1 $22.43 10 $16.81 100 $22.43 1000 $22.43 10000 $22.43	Buy Now
Mouser Electronics	NVBG030N120M3S		790			1 $23.64 10 $21.01 100 $18.38 1000 $15.31 10000 $15.31	Buy Now
Newark	NVBG030N120M3S	Cut Tape	1,575		1	1 $27.64 10 $24.91 100 $22.17 1000 $19.37 10000 $18.98	Buy Now
	NVBG030N120M3S	Reel			800	1 - 10 - 100 - 1000 $14.44 10000 $14.44	Buy Now
Richardson RFPD	NVBG030N120M3S		1,600		800	1 - 10 - 100 - 1000 $15.16 10000 $15.16	Buy Now
Avnet Silica	NVBG030N120M3S			19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	NVBG030N120M3S		1,600	20 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NVBG030N120M3S		1,600		1	1 - 10 - 100 - 1000 $26.73 10000 $24.73	Buy Now
onsemi NTBG030N120M3S SILICON CARBIDE (SIC) MOSFET - E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTBG030N120M3S	Digi-Reel	565		1	1 $10.04 10 $7.23 100 $10.04 1000 $10.04 10000 $10.04	Buy Now
	NTBG030N120M3S	Cut Tape	565		1	1 $10.04 10 $7.23 100 $10.04 1000 $10.04 10000 $10.04	Buy Now
Mouser Electronics	NTBG030N120M3S		964			1 $11.1 10 $8.07 100 $6.05 1000 $6.04 10000 $6.04	Buy Now
Newark	NTBG030N120M3S	Cut Tape	160		1	1 $7.76 10 $7.76 100 $7.76 1000 $7.01 10000 $7.01	Buy Now
Richardson RFPD	NTBG030N120M3S		800		800	1 - 10 - 100 - 1000 $5.55 10000 $5.55	Buy Now
Avnet Asia	NTBG030N120M3S		160	17 Weeks	800	1 - 10 - 100 - 1000 $11.76843 10000 $10.17025	Buy Now

Avnet Silica	NTBG030N120M3S			18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTBG030N120M3S		8,000	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NTBG030N120M3S		6,400		1	1 - 10 - 100 - 1000 $10.12 10000 $9.37	Buy Now
IXYS Corporation IXYH30N120C3D1 IGBT 1200V 66A 416W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH30N120C3D1	Tube	503		1	1 $8.38 10 $8.38 100 $5.864 1000 $5.864 10000 $5.864	Buy Now
STMicroelectronics SCT30N120 SICFET N-CH 1200V 40A HIP247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCT30N120	Tube	446		1	1 $24.76 10 $24.76 100 $15.853 1000 $24.76 10000 $24.76	Buy Now
Mouser Electronics	SCT30N120		716			1 $24.22 10 $24.15 100 $14.83 1000 $14.83 10000 $14.83	Buy Now
Newark	SCT30N120	Bulk	280		1	1 $25.14 10 $21.54 100 $18.32 1000 $18.32 10000 $18.32	Buy Now
STMicroelectronics	SCT30N120		716		1	1 $23.74 10 $23.67 100 $14.53 1000 $14.53 10000 $14.53	Buy Now
TME	SCT30N120				1	1 $22.12 10 $20.88 100 $20.88 1000 $20.88 10000 $20.88	Get Quote

Avnet Silica	SCT30N120		120	17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SCT30N120			33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NVH4L030N120M3S SILICON CARBIDE (SIC) MOSFET-ELI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVH4L030N120M3S	Tube	405		1	1 $23.03 10 $23.03 100 $15.66133 1000 $15.66133 10000 $15.66133	Buy Now
Mouser Electronics	NVH4L030N120M3S		194			1 $24.42 10 $22.91 100 $19.9 1000 $18.28 10000 $18.28	Buy Now
Richardson RFPD	NVH4L030N120M3S		900		450	1 - 10 - 100 - 1000 $15.66 10000 $15.66	Buy Now
Avnet Asia	NVH4L030N120M3S		108	17 Weeks	1,350	1 - 10 - 100 - 1000 - 10000 $2.84715	Buy Now
Avnet Silica	NVH4L030N120M3S		120	18 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	NVH4L030N120M3S		2,700	19 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NVH4L030N120M3S		2,160		1	1 - 10 - 100 $28.26 1000 $28.26 10000 $26.15	Buy Now

Find more 30N120 price and stock on Findchips.com

30N120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
30N120D2		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

30N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	PDF	30N120 30N120 247TM E153432 IXDR30N120
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package = 1200 V = 60 A = 2.4 V VCE sat typ (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM	Original	PDF	30N120 30N120 247TM E153432 D-68623
IXDR30N120 Abstract: 30N120 5027A R30N120 30n120d1 MJ10 Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	PDF	30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 5027A R30N120 30n120d1 MJ10
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type unshielded GND electrode	Original	PDF	30N1200
30n120 Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600 Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1	Original	PDF	30N120 30N120 O-247 O--268 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable	Original	PDF	30N1200
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable	Original	PDF	30N1200
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode	Original	PDF	30N1200
Untitled Abstract: No abstract text available Text: Capacitive Sensors CFAK 30N1200 Capacitive Sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm	Original	PDF	30N1200
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 25 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift	Original	PDF	30N1200
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode	Original	PDF	30N1200
IXDR30N120 Abstract: 30N120 50 a diode 600v high R30N120 Text: IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package VCE sat typ = 1200 V = 50 A = 2.4 V (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM E153432 G G C E E Isolated Backside*	Original	PDF	30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 50 a diode 600v high R30N120
30N120D1 Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1 Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1	Original	PDF	30N120 30N120 IXDH30N120 D-68623 30N120D1 30n120d T30N120 ixdh 30n120d1
30n12 Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift	Original	PDF	30N1200 30n12

Untitled Abstract: No abstract text available Text: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V IC25 = 60 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C	Original	PDF	30N120 30N120 IXDH30N120
diode 439 Abstract: 30N120 IXDR30N120 R30N120 Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	PDF	30N120 30N120 247TM E153432 IXDR30N120 diode 439 IXDR30N120 R30N120
30N120AU1 Abstract: robot control TO-268 IXDH30N120AU1 Text: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.5 V Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N120AU1 O-268 30N120AU1 robot control TO-268 IXDH30N120AU1
Untitled Abstract: No abstract text available Text: 30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	PDF	NGTB30N120IHRWG NGTB30N120IHR/D
Untitled Abstract: No abstract text available Text: 30N120CN / 30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The 30N120CN and 30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar	Original	PDF	HGTG30N120CN HGTG5A30N120CN HGT5A30N120CN TA49281.
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30 Sn = 30 mm Capacitive proximity sensors sample drawing 72 58 M30 x 1,5 SW 36 LED Pot sample picture general data special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable	Original	PDF	30N1200 30N3200 30P1200 30P3200
Untitled Abstract: No abstract text available Text: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and	Original	PDF	CH-8501 0x/12 11xxxxxx
30N120 Abstract: 30n120d Text: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l	OCR Scan	PDF	30N120 30N120 IXDT30N120 O-247 D-68623 30n120d
30N120A Abstract: No abstract text available Text: Advanced Data High Voltage IGBT with Diode IXDH 30N120AU1 VCES IC25 VCE sat typ SCSOA Capability Symbol Test Conditions V CES Tj =25°C to 150°C Vco„ T, = Maximum Ratings 25°C to 150°C; RGE= 1 M fi 1200 V 1200 V V GES Continuous ±20 V V QE„ T ransient	OCR Scan	PDF	30N120AU1 O-247 30N120A
IXDH30N120AU1 Abstract: 30N120A Text: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 V CES 1200 V 50 A 2.5 V ^C25 V CE sat typ S hort C ircuit SOA Capability Prelim inary Data Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES	OCR Scan	PDF	30N120AU1 O-268 IXDH30N120AU1 30N120A

Privacy Settings

30N120 Search Results

30N120 Price and Stock

onsemi NVBG030N120M3S

onsemi NTBG030N120M3S

IXYS Corporation IXYH30N120C3D1

STMicroelectronics SCT30N120

onsemi NVH4L030N120M3S

30N120 Datasheets (1)

30N120 Datasheets Context Search

Untitled

Untitled

IXDR30N120

Untitled

30n120

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

IXDR30N120

30N120D1

30n12

Untitled

diode 439

30N120AU1

Untitled

Untitled

Untitled

Untitled

30N120

30N120A

IXDH30N120AU1