30QA
Abstract: KMB010P30QA KMB010P
Text: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB010P 30QA 1 709 3 2 No. 2007. 5. 21 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 709 Revision No : 0 7 Year
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KMB010P30QA
KMB010P
30QA
KMB010P30QA
KMB010P
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30QA
Abstract: marking 702 KMB6D0DN30QA 702 8 PIN diode 702 702 marking
Text: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB6D0DN 30QA 702 2 No. 2007. 4. 18 1 3 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 702 Revision No : 0
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KMB6D0DN30QA
30QA
marking 702
KMB6D0DN30QA
702 8 PIN
diode 702
702 marking
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30QA
Abstract: 705 transistor KMB7D1DP30QA
Text: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB7D1DP 30QA 705 2 No. 2007. 4. 18 1 3 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 705 Revision No : 0
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KMB7D1DP30QA
30QA
705 transistor
KMB7D1DP30QA
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KMB014P
Abstract: KMB014P30QA 30QA
Text: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB014P 30QA 1 706 3 2 No. 2007. 5. 21 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 706 Revision No : 0 7 Year
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KMB014P30QA
KMB014P
KMB014P
KMB014P30QA
30QA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 30QA TECHNICAL DATA SBD and P-Ch Trench MOSFET GENERAL DESCRIPTION ・It is particularly suited for switching such as DC/DC Converters. ・It is driven as low as 4.5V and fast switching, high efficiency. H T FEATURES G P D ・VDSS=-30V, ID=-3.5A.
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KMB3D5PS30QA
Fig10.
Fig11.
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Untitled
Abstract: No abstract text available
Text: 5mm Red AlGaInP Ultra Bright LED LC503THR1−30Q-A Features 5mm Package High Optical Power High Luminous Intensity Water Clear Lens All Plastic Mold Type Applications Outdoor Message Centers VMS Automotive Interior Lighting Traffic Signals Pedestrian Signals
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LC503THR1â
30Q-A
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KMB010P
Abstract: KMB010P30QA 30QA
Text: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
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KMB010P30QA
100ms
KMB010P
KMB010P30QA
30QA
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KMB014P30QA
Abstract: 30QA KMB014P
Text: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
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KMB014P30QA
100ms
KMB014P30QA
30QA
KMB014P
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for Battery pack.
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KMB010P30QA
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Untitled
Abstract: No abstract text available
Text: 5mm Green InGaN Ultra Bright LED LC503PPG1−30Q-A Features 5mm Package High Optical Power High Luminous Intensity Water Clear Lens All Plastic Mold Type PRELIMINARY SPEC Applications Outdoor Message Centers VMS Automotive Interior Lighting Traffic Signals
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LC503PPG1-30Q-A
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Untitled
Abstract: No abstract text available
Text: 5mm Blue InGaN Ultra Bright LED LC503PBL1−30Q-A Features 5mm Package High Optical Power High Luminous Intensity Water Clear Lens All Plastic Mold Type Applications Outdoor Message Centers VMS Automotive Interior Lighting Traffic Signals Pedestrian Signals
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LC503PBL1-30Q-A
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KMB6D0DN30QA
Abstract: 30QA
Text: SEMICONDUCTOR 30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC
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KMB6D0DN30QA
Fig10.
Fig11.
Fig12.
KMB6D0DN30QA
30QA
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KMB8D0P
Abstract: KMB8D0P30QA KMB8D0P30Q 30QA KMB8D0P 30QA
Text: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Load Switch and Battery pack.
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KMB8D0P30QA
100us
100ms
Fig11.
KMB8D0P
KMB8D0P30QA
KMB8D0P30Q
30QA
KMB8D0P 30QA
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KMB012N
Abstract: 30QA KMB012N30QA
Text: SEMICONDUCTOR 30QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.
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KMB012N30QA
100us
100ms
Fig11.
KMB012N
30QA
KMB012N30QA
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Untitled
Abstract: No abstract text available
Text: DIP 14PIH OU TL IN E DR AWING DIP14-P-300 733 Un it in m m DIP 16PIN OUTLINE DRAWING (DIP16-P-30QA)_ Unit in m m DIP 1 SP IN OU TL IN E DR AW IN G (DIP18-P-300A) 18 U nit in mm 10 n i—i r—t i—> i—i i—i r-> -H u i i i i i ri i i ii ii i
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14PIH
DIP14-P-300)
16PIN
DIP16-P-30QA)
DIP18-P-300A)
20PIN
DIP20-P-300A)
DIP24-P-300)
24PIN
DIP24-P-600)
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QM300HA-2H
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N
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QM300HA-2H
E80276
E80271
rQrr10'
QM300HA-2H
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Untitled
Abstract: No abstract text available
Text: R EV DESCRIPTION DATE D ES IG N ED A 1.25. 0. 6 1 Connec to r o u t 1 i ne li ill , , lll ¡1 ¿1 di ili li X . i : 4 -N o . I - |fMark 1.35 t o . I Recomaendable 4.05 T H I S DRAWING C O N T A I N S I N F O R M A T I O N T HA T AND S H O U L D N O T BE U S E D W I T H O U T W R I T T E N
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30Qaa/al
6M80S6E0-TAPINC
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N mos 100v 100A
Abstract: No abstract text available
Text: EFFECT OF LEAD WIRE LENGTHS ON PROTECTOR CLAMPING VOLTAGES by O. M elville Clark and Joseph J. Pizzicanti Originally presented at the Federal Aviation Adnninistration-Ftoriria Institute of Technology Workshop on Grounding and Lightning Technology March, 1979 - Melbourne, Florida
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C451
Abstract: No abstract text available
Text: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"
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IRGDDN300M06
IRGRDN300M06
hiOutline13
C-452
C451
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER I« R 73 dF J 4655452 □□0blì53 fl T-2-?-/f Data Sheet No. PD-3.145 in t e r n a t io n a l r e c t if ie r S23DF SERIES 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 ¿/s 210 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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S23DF
S23DF16A0.
554S2
209AB
TQ-93)
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RUR30100
Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns
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43D2571
110ns)
RUR3070,
RUR3080,
RUR3090,
RUR30100
RUR3080.
RUR3090RUR30100
rur30100 Diode
30a 1000v
RUR3070
RUR3080
RUR3090
VRWM-700V
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C1022
Abstract: IRGTDN300K06 "welding circuit " IGBT 1022 MC
Text: Provisional Data Sheet PD-9.1199 Rectifier S IRGTDN300K06 “HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT Half-Bridge -o3 r VCE = 600V lc = 300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGTDN300K06
L---02
techniq15V
C-1022
C1022
IRGTDN300K06
"welding circuit " IGBT
1022 MC
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Untitled
Abstract: No abstract text available
Text: Advanced Power MOSFET IR F R / U 1 2 0 A FEATURES • ■ ■ ■ ■ ■ ■ B V qss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ VDS=100V
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IRFR/U120A
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TS 4142
Abstract: IRf 334
Text: Advanced Power MOSFET IR L R / U 034A FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA Max. @ VDS= 60V
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IRLR/U034A
TS 4142
IRf 334
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