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    30RAA Search Results

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    30RAA Price and Stock

    Cornell Dubilier Electronics Inc 184102K630RAA-F

    CAP FILM 1000PF 10% 630VDC RAD
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    DigiKey 184102K630RAA-F Reel 1,800
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    Newark 184102K630RAA-F Reel 1,800
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    • 1000 $0.623
    • 10000 $0.479
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    Cornell Dubilier Electronics Inc 184332K630RAA-F

    CAP FILM 3300PF 10% 630VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 184332K630RAA-F Reel 1,800
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    Newark 184332K630RAA-F Reel 1,800
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    • 10000 $0.493
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    Cornell Dubilier Electronics Inc 184152K630RAA-F

    CAP FILM 1500PF 10% 630VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 184152K630RAA-F Reel 1,800
    • 1 -
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    • 10000 $0.54178
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    Newark 184152K630RAA-F Reel 1,800
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    • 1000 $0.623
    • 10000 $0.479
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    Cornell Dubilier Electronics Inc 184222K630RAA-F

    CAP FILM 2200PF 10% 630VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 184222K630RAA-F Reel 1,800
    • 1 -
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    • 10000 $0.54178
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    Newark 184222K630RAA-F Reel 1,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.623
    • 10000 $0.479
    Buy Now

    Cornell Dubilier Electronics Inc 184332J630RAA-F

    CAP FILM 3300PF 5% 630VDC RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 184332J630RAA-F Reel 1,800
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    • 10000 $0.56895
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    Newark 184332J630RAA-F Reel 1,800
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    • 1000 $0.658
    • 10000 $0.506
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    30RAA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TLP645G

    Abstract: TLP645
    Text: TLP645G GaAs IRED a PHOTO-THYRISTOR TENTATIVE DATA OFFICE MACHINE. Unit in mm HOUSEHOLE USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP645G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.


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    TLP645G TLP645G 150mA 5000Vrms IEC380/VDE0806 500Vac 600Vdc VDE0110, VDE0110 TLP645 PDF

    H1AA

    Abstract: E7750
    Text: I' KKI ' AKKII B Y : SI ’ E C N o . 19i 2 J A N U A R Y . 20 by : 1 9 9 2 J A N U A R Y . 20 k. * ISSUE E L E C T R O N I C C O MP O N E N T S C R O U P SHARP C OR P OR A TI O N PAGE 1 9 9 2 J A N U A R Y . 20 SPECIFICATION JANUARY 20, 19 9 2 3 E L E C T R O N I C COMPONENTS D I V .


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    E7750 200PF, A1XE7750PN PLC-21A7 E82623 E3820A H1AA E7750 PDF

    Untitled

    Abstract: No abstract text available
    Text: CRO MPS3569 NPN SILICON TRANSISTOR TO-92A DESCRIPTION MPS3569 is NPN silicon plapar epitaxial transistor designed fo r AF medium power am plifiers. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80V Collector-Emitter Voltage VcEO 40V Emitter-Base Voltage


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    MPS3569 O-92A MPS3569 625mW 100uA 30raA 150mA Oct-96 VCB-10V PDF

    Untitled

    Abstract: No abstract text available
    Text: N EC ELECTRONICS INC Tfl T'<J3~JZ-S D Ê|bM 2?S2 S OCmiS^ 1 POWER TRANSISTOR ARRAY •EELECTRON D E V IC E ^ # ' . NPN SILICON e p i t a x i a l low speed power / / P A I 4 5 4 t r a n s is t o r H array sw it c h in g DESCRIPTION The u PA1454H Is an array of four power tran sisto rs. I t Is esp e cially


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    PA1454H PDF

    MPS3569

    Abstract: No abstract text available
    Text: IVI m SILICON TRANSISTOR TO-92A DESCRIPTION MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation


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    MPS3569 O-92A 625mW 100uA 30raA Vcr40V 150mA 150mA Oct-96 PDF

    transistor BC142

    Abstract: BC142 BC143 bc143 transistor
    Text: BC142 GENERAL DESCRIPTION : The BC142 is a NPN silicon planar epitaxial transistor. It features low saturation voltage, low collector cut­ off current and high breakdown voltage. It is intended for use in driver stages of high power audio amplifiers. It can


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    BC142 BC143 i42-BC143 200mA Ic-10mA Ic-100mA 500mA Ic-50mA transistor BC142 bc143 transistor PDF

    TA78DS05P

    Abstract: TA78DS10P oc 502
    Text: ÏÏÎIÏÏ 'r— -¡^ '-• * -* '"^‘ 21 a 1D17E47 0011331 5 TOSHIBA-. ELECTRONIC 02 TA 78D S 05P , TA 78D S 10P T-58-H -0 BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC o 5V, 10V LOW DROPOUT VOLTAGE REGULATOR The TA78DS05P and TA78DS10P are three terminal regulator


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    CJDC17247 TA78DS05P, TA78DS10P TA78DS05P TA78DS10P 500pA oc 502 PDF

    mps3569

    Abstract: ebc Transistor
    Text: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage


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    MPS3569 MPS3569 O-92A 625mW 150mA 150mA Oct-96 300uS, ebc Transistor PDF

    VALVO Handbuch

    Abstract: LDR 04 valvo handbuch rohren ef861 PENTODE pl 508 Str 5654 Geiger-muller DG 13-54 rbs 6201 ci LA 7804 ON
    Text: T y p e n v e rz e ic h n is Ü b e rsic h t Ä q u iv a le n z lis te 1 V e rstä rk e rrö h re n M e ß d io d e n R a u s c h d io d e n 1 K a t o d e n s t r a h lrö h re n für M e ß z w e c k e K a m e ra rö h re n A b fa strö h re n B ild rö h re n


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    ehm010 VALVO Handbuch LDR 04 valvo handbuch rohren ef861 PENTODE pl 508 Str 5654 Geiger-muller DG 13-54 rbs 6201 ci LA 7804 ON PDF

    NJL721B

    Abstract: No abstract text available
    Text: NJL1121B C Jnq GaAIAs INFRARED EMITTING DIODE OUTLINE typ. Unit FEATURES • High output, high speed infrared emitting diode due to the use of GaAIAs. • High output — equivalent to 4 times approximately to that of our conventional products due to the use o f GaAIAs chip and header cup


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    NJL1121B NJL61 NJL612B, NJL721B, NJL7260B, NJL81 I12IB a--25 NJL721B PDF