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    30V VGS Search Results

    30V VGS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSD17505Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17501Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17506Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17510Q5A Texas Instruments 30V N-Channel Low Side NexFET Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17507Q5A Texas Instruments 30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
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    30V VGS Price and Stock

    United Chemi-Con Inc E82D630VGS742AA50U

    Aluminum Electrolytic Capacitors - Snap In
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    Mouser Electronics E82D630VGS742AA50U
    • 1 $9.54
    • 10 $8.27
    • 100 $6.39
    • 1000 $5.85
    • 10000 $5.85
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    United Chemi-Con Inc E81D630VGS222MR25N

    Aluminum Electrolytic Capacitors - Snap In 2200uF 63 Volt
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    Mouser Electronics E81D630VGS222MR25N
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    United Chemi-Con Inc E82D630VGS123MA63U

    Aluminum Electrolytic Capacitors - Snap In
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics E82D630VGS123MA63U
    • 1 -
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    • 100 $9.08
    • 1000 $8.71
    • 10000 $8.71
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    United Chemi-Con Inc E81D630VGS392MA30N

    Aluminum Electrolytic Capacitors - Snap In 3900uF 63 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics E81D630VGS392MA30N
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    • 1000 $5.8
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    United Chemi-Con Inc E81D630VGS822MA40N

    Aluminum Electrolytic Capacitors - Snap In 8200uF 63 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics E81D630VGS822MA40N
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    Find more 30V VGS price and stock on Findchips.com

    30V VGS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p100NF

    Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
    Text: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V


    Original     		PDF STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 D2PAK/I2/TO-220 STB100NF03L-03 O-220 p100NF B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720

    STB200NF03

    Abstract: STB200NF03-1 STB200NF03T4 STP200NF03 JESD97 TO247 package dissipation
    Text: STP200NF03 STB200NF03 - STB200NF03-1 N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP200NF03 30V <0.0037Ω 120A(1) STB200NF03 30V <0.0037Ω 120A(1) STB200NF03-1 30V <0.0037Ω 120A(1)


    Original     		PDF STP200NF03 STB200NF03 STB200NF03-1 D2PAK/I2PAK/TO-220 STB200NF03 O-220 STB200NF03-1 STB200NF03T4 STP200NF03 JESD97 TO247 package dissipation

    JESD97

    Abstract: STB200NF03 STB200NF03-1 STB200NF03T4 STP200NF03
    Text: STP200NF03 STB200NF03 - STB200NF03-1 N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP200NF03 30V <0.0037Ω 120A(1) STB200NF03 30V <0.0037Ω 120A(1) STB200NF03-1 30V <0.0037Ω 120A(1)


    Original     		PDF STP200NF03 STB200NF03 STB200NF03-1 D2PAK/I2PAK/TO-220 STB200NF03 O-220 JESD97 STB200NF03-1 STB200NF03T4 STP200NF03

    Untitled

    Abstract: No abstract text available
    Text: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V


    Original     		PDF STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 D2PAK/I2/TO-220 STB100NF03L-03 O-220

    AOP604

    Abstract: No abstract text available
    Text: AOP604 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, IF=3A, VF<0.5V@1A


    Original     		PDF AOP604 AOP604 AOP604L

    Untitled

    Abstract: No abstract text available
    Text: STP200NF03 STB200NF03 - STB200NF03-1 N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP200NF03 30V <0.0037Ω 120A(1) STB200NF03 30V <0.0037Ω 120A(1) STB200NF03-1 30V <0.0037Ω 120A(1)


    Original     		PDF STP200NF03 STB200NF03 STB200NF03-1 D2PAK/I2PAK/TO-220 STB200NF03 O-220

    AOP601

    Abstract: AOP601L
    Text: AOP601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A


    Original     		PDF AOP601 AOP601 AOP601L

    JESD97

    Abstract: S8C5H30L STS8C5H30L
    Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced


    Original     		PDF STS8C5H30L STS8C5H30L JESD97 S8C5H30L

    P70NF

    Abstract: B70NF03L STB70NF03L-1 JESD97 STB70NF03L STP70NF03L
    Text: STB70NF03L STP70NF03L - STB70NF03L-1 N-channel 30V - 0.0075Ω - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB70NF03L 30V < 0.0095Ω 70A STP70NF03L 30V < 0.0095Ω 70A STB70NF03L-1 30V < 0.0095Ω


    Original     		PDF STB70NF03L STP70NF03L STB70NF03L-1 O-220 STP70NF03L P70NF B70NF03L STB70NF03L-1 JESD97 STB70NF03L

    Untitled

    Abstract: No abstract text available
    Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced


    Original     		PDF STS8C5H30L STS8C5H30L

    mdd1653

    Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
    Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


    Original     		PDF MDD1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP

    C3025LD

    Abstract: No abstract text available
    Text: DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 85mΩ @ VGS = -4.5V Package ID MAX TA = +25°C


    Original     		PDF DMC3025LSD AEC-Q101 DS35717 C3025LD

    JESD97

    Abstract: S8C5H30L STS8C5H30L
    Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET Features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced ■ Switching losses reduced


    Original     		PDF STS8C5H30L STS8C5H30L JESD97 S8C5H30L

    Untitled

    Abstract: No abstract text available
    Text: STP45NF3LL - STP45NF3LLFP STB45NF3LL N-channel 30V - 0.014Ω - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET General features Type VDSS RDS on ID STB45NF3LL 30V <0.018Ω 45A STP45NF3LLFP 30V <0.018Ω 45A STP45NF3LL 30V <0.018Ω 27A • Optimal RDS(on) x Qg trade-off @ 4.5V


    Original     		PDF STP45NF3LL STP45NF3LLFP STB45NF3LL O-220 O-220FP STP45NF3LL O-220 O-220FP

    JESD97

    Abstract: STB11NM60FD STB11NM60FD-1 STB45NF3LL STP11NM60FD STP45NF3LL STP45NF3LLFP p11nm60
    Text: STP45NF3LL - STP45NF3LLFP STB45NF3LL N-channel 30V - 0.014Ω - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET General features Type VDSS RDS on ID STB45NF3LL 30V <0.018Ω 45A STP45NF3LLFP 30V <0.018Ω 45A STP45NF3LL 30V <0.018Ω 27A • Optimal RDS(on) x Qg trade-off @ 4.5V


    Original     		PDF STP45NF3LL STP45NF3LLFP STB45NF3LL O-220 O-220FP STP45NF3LL O-220 O-220FP JESD97 STB11NM60FD STB11NM60FD-1 STB45NF3LL STP11NM60FD STP45NF3LLFP p11nm60

    C3025LS

    Abstract: diode n1s
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •


    Original     		PDF DMHC3025LSD AEC-Q101 DS35821 C3025LS diode n1s

    C3025LS

    Abstract: No abstract text available
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •  


    Original     		PDF DMHC3025LSD AEC-Q101 DS35821 C3025LS

    3f381

    Abstract: zxmhc3f381n8 ZXMHC3F381N8TC
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		PDF ZXMHC3F381N8 ZXMHC3F381N8TC 3f381 zxmhc3f381n8 ZXMHC3F381N8TC

    C723

    Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
    Text: Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 1/7 CYStech Electronics Corp. 30V N-Channel Logic Level Enhancement Mode MOSFET MTB55N03N3 BVDSS RDSON Max ID 30V 55mΩ 3.5A Features • VDS=30V RDS(ON)=55mΩ@VGS=10V, ID=3.5A RDS(ON)=85mΩ@VGS=4.5V, ID=2A


    Original     		PDF C723N3 MTB55N03N3 OT-23 UL94V-0 C723 N-CHANNEL MOSFET 30V 2A SOT-23

    3f381

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		PDF ZXMHC3F381N8 3f381

    3f381

    Abstract: ZXMHC3F381N8TC ZXMHC3F381N8 1000T
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		PDF ZXMHC3F381N8 ZXMHC3F381N8TC 522-ZXMHC3F381N8TC ZXMHC3F381N8TC 3f381 ZXMHC3F381N8 1000T

    transistor BF245

    Abstract: BF245 Fet BF245 transistor BF245 A UHF transistor FET
    Text: IsK U N-CHANNEL JUNCTION FET DESCRIPTION BF245 Effect is N-Channel Transistor TO-92 Junction Field designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V Drain Current


    OCR Scan     		PDF BF245 300mW 200/xA 300/xS, transistor BF245 Fet BF245 transistor BF245 A UHF transistor FET

    transistor BF245

    Abstract: fet BF245 BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"
    Text: BF245 N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for V HF/U H F amplifiers and m ixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V


    OCR Scan     		PDF BF245 300mW 300/xS, transistor BF245 fet BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R