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    318 MARKING DIODE Search Results

    318 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    318 MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q67000-S127

    Abstract: BSP318 TRANSISTOR 318 E6327
    Text: BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 318 60 V 2.6 A 0.15 Ω SOT-223 BSP 318 Type BSP 318


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    PDF OT-223 Q67000-S127 E6327 Sep-12-1996 Q67000-S127 BSP318 TRANSISTOR 318 E6327

    BSP 318 S

    Abstract: No abstract text available
    Text: BSP 318 S Preliminary data SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 318 S 60 V


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    PDF OT-223 67000-S127 curren40 BSP 318 S

    TRANSISTOR 318

    Abstract: No abstract text available
    Text: BSP 318 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Ω SOT-223


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    PDF OT-223 67000-S127 repet40 TRANSISTOR 318

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB


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    PDF LBAV74LT1G 3000/Tape LBAV74LT3G 10000/Tape 236AB)

    Untitled

    Abstract: No abstract text available
    Text: Switching Diode BAL99LT1 2 CATHODE 3 ANODE 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit VR IF 70 100 Vdc mAdc Continuous Reverse Voltage Peak Forward Current 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB DEVICE MARKING BAL99LT1 = JF THERMAL CHARACTERISTICS


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    PDF BAL99LT1 236AB)

    DIODE g6

    Abstract: LBAV74LT1
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING LBAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF


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    PDF LBAV74LT1 236AB) DIODE g6 LBAV74LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues We declare that the material of product compliance with RoHS requirements. 3 Ordering Information Device Marking 1 Shipping 2 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel CASE 318–08, STYLE 18


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    PDF LBAL99LT1G 3000/Tape LBAL99LT3G 10000/Tape 236AB) OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS


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    PDF LBAL99LT1G 3000/Tape LBAL99LT3G 10000/Tape 236AB)

    Marking g51

    Abstract: BAV70LT1
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc


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    PDF BAV70LT1 236AB) Marking g51 BAV70LT1

    BAL99LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode BAL99LT1 2 CATHODE 3 ANODE 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit VR IF 70 100 Vdc mAdc Continuous Reverse Voltage Peak Forward Current 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB DEVICE MARKING BAL99LT1 = JF


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    PDF BAL99LT1 236AB) BAL99LT1

    Untitled

    Abstract: No abstract text available
    Text: Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage


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    PDF BAV99LT1 236AB)

    kl3 diode

    Abstract: marking g10 transistor KL3 BAT54RCLT1
    Text: Schottky Barrier Diodes BAT54RCLT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAT54RCLT1 = KL3 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current (DC)


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    PDF BAT54RCLT1 236AB) 200MAX 120MAX kl3 diode marking g10 transistor KL3 BAT54RCLT1

    BAV74LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value


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    PDF BAV74LT1 236AB) BAV74LT1

    DIODE G7

    Abstract: BAV99LT1 G7 diode
    Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current


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    PDF BAV99LT1 236AB) DIODE G7 BAV99LT1 G7 diode

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Noise Transistor NPN Silicon LMBT2484LT1G z Pb-Free Package is Available. Ordering Information Device Marking 3 Shipping LMBT2484LT1G 1U 3000/Tape&Reel LMBT2484LT3G 1U 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS


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    PDF LMBT2484LT1G 3000/Tape LMBT2484LT3G 10000/Tape 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon z Pb-Free Package is Available. LMBTA70LT1G Ordering Information Device Marking Shipping 3 LMBTA70LT1G M2C 3000/Tape&Reel LMBTA70LT3G M2C 10000/Tape&Reel 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6


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    PDF LMBTA70LT1G 3000/Tape LMBTA70LT3G 10000/Tape 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS


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    PDF LMBT918LT1G 3000/Tape LMBT918LT3G 10000/Tape 236AB)

    kl3 diode

    Abstract: transistor KL3 BAT54RCLT1
    Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes BAT54RCLT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAT54RCLT1 = KL3 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C


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    PDF BAT54RCLT1 236AB) 200MAX 120MAX kl3 diode transistor KL3 BAT54RCLT1

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc FM(surge) 500 mAdc Symbol


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    PDF BAV70LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon LMBTA20LT1G z Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping LMBTA20LT1G 1C 3000/Tape&Reel LMBTA20LT1G 1C 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB


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    PDF LMBTA20LT1G 3000/Tape 10000/Tape 236AB)

    Untitled

    Abstract: No abstract text available
    Text: Switching Diode 3 CATHODE BAS16LT1 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current 3 Symbol Value Unit VR IF 75 200 500 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) DEVICE MARKING


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    PDF BAS16LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318


    OCR Scan
    PDF Q67000-S127 OT-223 E6327 fi23SbQS a23SbQS fl235b05

    TRANSISTOR 318

    Abstract: BSP 312 BSP318 MU diode MARKING CODE
    Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223


    OCR Scan
    PDF OT-223 Q67000-S127 E6327 OT-223 TRANSISTOR 318 BSP 312 BSP318 MU diode MARKING CODE

    s127 marking

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated Pin 1 G Pin 2 D Pin 3 Pin 4 D S Type Vbs b RDS on Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Q SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings


    OCR Scan
    PDF OT-223 67000-S127 s127 marking