Q67000-S127
Abstract: BSP318 TRANSISTOR 318 E6327
Text: BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 318 60 V 2.6 A 0.15 Ω SOT-223 BSP 318 Type BSP 318
|
Original
|
PDF
|
OT-223
Q67000-S127
E6327
Sep-12-1996
Q67000-S127
BSP318
TRANSISTOR 318
E6327
|
BSP 318 S
Abstract: No abstract text available
Text: BSP 318 S Preliminary data SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 318 S 60 V
|
Original
|
PDF
|
OT-223
67000-S127
curren40
BSP 318 S
|
TRANSISTOR 318
Abstract: No abstract text available
Text: BSP 318 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Ω SOT-223
|
Original
|
PDF
|
OT-223
67000-S127
repet40
TRANSISTOR 318
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB
|
Original
|
PDF
|
LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
|
Untitled
Abstract: No abstract text available
Text: Switching Diode BAL99LT1 2 CATHODE 3 ANODE 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit VR IF 70 100 Vdc mAdc Continuous Reverse Voltage Peak Forward Current 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB DEVICE MARKING BAL99LT1 = JF THERMAL CHARACTERISTICS
|
Original
|
PDF
|
BAL99LT1
236AB)
|
DIODE g6
Abstract: LBAV74LT1
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING LBAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF
|
Original
|
PDF
|
LBAV74LT1
236AB)
DIODE g6
LBAV74LT1
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues We declare that the material of product compliance with RoHS requirements. 3 Ordering Information Device Marking 1 Shipping 2 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel CASE 318–08, STYLE 18
|
Original
|
PDF
|
LBAL99LT1G
3000/Tape
LBAL99LT3G
10000/Tape
236AB)
OT-23
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS
|
Original
|
PDF
|
LBAL99LT1G
3000/Tape
LBAL99LT3G
10000/Tape
236AB)
|
Marking g51
Abstract: BAV70LT1
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc
|
Original
|
PDF
|
BAV70LT1
236AB)
Marking g51
BAV70LT1
|
BAL99LT1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode BAL99LT1 2 CATHODE 3 ANODE 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit VR IF 70 100 Vdc mAdc Continuous Reverse Voltage Peak Forward Current 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB DEVICE MARKING BAL99LT1 = JF
|
Original
|
PDF
|
BAL99LT1
236AB)
BAL99LT1
|
Untitled
Abstract: No abstract text available
Text: Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
BAV99LT1
236AB)
|
kl3 diode
Abstract: marking g10 transistor KL3 BAT54RCLT1
Text: Schottky Barrier Diodes BAT54RCLT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAT54RCLT1 = KL3 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current (DC)
|
Original
|
PDF
|
BAT54RCLT1
236AB)
200MAX
120MAX
kl3 diode
marking g10
transistor KL3
BAT54RCLT1
|
BAV74LT1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value
|
Original
|
PDF
|
BAV74LT1
236AB)
BAV74LT1
|
DIODE G7
Abstract: BAV99LT1 G7 diode
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current
|
Original
|
PDF
|
BAV99LT1
236AB)
DIODE G7
BAV99LT1
G7 diode
|
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Noise Transistor NPN Silicon LMBT2484LT1G z Pb-Free Package is Available. Ordering Information Device Marking 3 Shipping LMBT2484LT1G 1U 3000/Tape&Reel LMBT2484LT3G 1U 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS
|
Original
|
PDF
|
LMBT2484LT1G
3000/Tape
LMBT2484LT3G
10000/Tape
236AB)
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon z Pb-Free Package is Available. LMBTA70LT1G Ordering Information Device Marking Shipping 3 LMBTA70LT1G M2C 3000/Tape&Reel LMBTA70LT3G M2C 10000/Tape&Reel 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6
|
Original
|
PDF
|
LMBTA70LT1G
3000/Tape
LMBTA70LT3G
10000/Tape
236AB)
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS
|
Original
|
PDF
|
LMBT918LT1G
3000/Tape
LMBT918LT3G
10000/Tape
236AB)
|
kl3 diode
Abstract: transistor KL3 BAT54RCLT1
Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes BAT54RCLT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAT54RCLT1 = KL3 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C
|
Original
|
PDF
|
BAT54RCLT1
236AB)
200MAX
120MAX
kl3 diode
transistor KL3
BAT54RCLT1
|
Untitled
Abstract: No abstract text available
Text: Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc FM(surge) 500 mAdc Symbol
|
Original
|
PDF
|
BAV70LT1
236AB)
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon LMBTA20LT1G z Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping LMBTA20LT1G 1C 3000/Tape&Reel LMBTA20LT1G 1C 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB
|
Original
|
PDF
|
LMBTA20LT1G
3000/Tape
10000/Tape
236AB)
|
Untitled
Abstract: No abstract text available
Text: Switching Diode 3 CATHODE BAS16LT1 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current 3 Symbol Value Unit VR IF 75 200 500 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) DEVICE MARKING
|
Original
|
PDF
|
BAS16LT1
236AB)
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318
|
OCR Scan
|
PDF
|
Q67000-S127
OT-223
E6327
fi23SbQS
a23SbQS
fl235b05
|
TRANSISTOR 318
Abstract: BSP 312 BSP318 MU diode MARKING CODE
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223
|
OCR Scan
|
PDF
|
OT-223
Q67000-S127
E6327
OT-223
TRANSISTOR 318
BSP 312
BSP318
MU diode MARKING CODE
|
s127 marking
Abstract: No abstract text available
Text: SIEMENS SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated Pin 1 G Pin 2 D Pin 3 Pin 4 D S Type Vbs b RDS on Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Q SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings
|
OCR Scan
|
PDF
|
OT-223
67000-S127
s127 marking
|